Abstract: An object of the present invention is to provide a terahertz oscillator that does not have an MIM capacitor structure of which producing is intricacy, and oscillates due to resonance of an RTD and stabilizing resistors. The present invention is a terahertz oscillator, wherein a slot antenna having a slot is formed between a first electrode plate and a second electrode plate which are applied a bias voltage, stabilizing resistors to respectively connect to the first electrode plate and the second electrode plate are provided in the slot, an RTD is provided on the second electrode plate through a mesa, and a conductive material member to form an air bridge between the first electrode plate and the mesa is provided, and wherein an oscillation in a terahertz frequency band is obtained due to a resonance of the RTD and the stabilizing resistors.

Abstract: An object of the present invention is to provide a terahertz oscillator that does not have an MIM capacitor structure of which producing is intricacy, and oscillates due to resonance of an RTD and stabilizing resistors. The present invention is a terahertz oscillator, wherein a slot antenna having a slot is formed between a first electrode plate and a second electrode plate which are applied a bias voltage, stabilizing resistors to respectively connect to the first electrode plate and the second electrode plate are provided in the slot, an RTD is provided on the second electrode plate through a mesa, and a conductive material member to form an air bridge between the first electrode plate and the mesa is provided, and wherein an oscillation in a terahertz frequency band is obtained due to a resonance of the RTD and the stabilizing resistors.

Abstract: The present invention is the sub-carrier modulated terahertz radar that modulates a main-carrier signal in the terahertz frequency band, which is generated from a resonant tunneling diode (RTD), by a sub-carrier signal in a gigahertz frequency band whose frequency varies periodically, irradiates a frequency-modulated irradiation light to a target, detects and demodulates a reflected light from the target, mixes a demodulated signal with the sub-carrier signal, performs a Fourier transform on a mixed signal, and measures a distance from an irradiation position to the target by using a Fourier-transformed frequency signal.

Abstract: A small-size high-power terahertz oscillator achieves a stable oscillation in a terahertz frequency band even at room temperature. The high-power terahertz oscillator has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator, which includes two cavities, is disposed at a power supply portion of the bow-tie antenna, and a resonant tunneling diode (RTD) is disposed along a bottom of a wall of the cavity resonator, which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

Abstract: [Problem] An object of the present invention is to provide a small-size high-power terahertz oscillator that achieves a stable oscillation in a terahertz frequency band even at a room temperature. [Means for solving the problem] The present invention is the high-power terahertz oscillator that has a structure in which a bow-tie antenna is disposed on a substrate, a cavity resonator which includes two cavities is disposed at a power supply portion of the bow-tie antenna and a RTD is disposed along a bottom of a wall of the cavity resonator which defines the two cavities, and stably oscillates waves in the terahertz frequency band at room temperature by using the RTD, the bow-tie antenna and the cavity resonator.

Abstract: The present invention is the sub-carrier modulated terahertz radar that modulates a main-carrier signal in the terahertz frequency band, which is generated from a resonant tunneling diode (RTD), by a sub-carrier signal in a gigahertz frequency band whose frequency varies periodically, irradiates a frequency-modulated irradiation light to a target, detects and demodulates a reflected light from the target, mixes a demodulated signal with the sub-carrier signal, performs a Fourier transform on a mixed signal, and measures a distance from an irradiation position to the target by using a Fourier-transformed frequency signal.

Abstract: A small-sized frequency-variable terahertz oscillator has a successive and large frequency-sweeping width even at a room temperature. The frequency-variable terahertz oscillator includes a slot antenna, a resonant tunneling diode and a varactor diode arranged parallel to each other along the slot antenna. The frequency-variable terahertz oscillator oscillates in a terahertz frequency range when the resonant tunneling diode and the varactor diode are separately applied with a direct voltage.

Abstract: A small-sized frequency-variable terahertz oscillator has a successive and large frequency-sweeping width even at a room temperature. The frequency-variable terahertz oscillator includes a slot antenna, a resonant tunneling diode and a varactor diode arranged parallel to each other along the slot antenna. The frequency-variable terahertz oscillator oscillates in a terahertz frequency range when the resonant tunneling diode and the varactor diode are separately applied with a direct voltage.

Abstract: A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.

Abstract: A terahertz oscillation device includes a first electrode placed on the semiconductor substrate; a second electrode placed via the insulating layer toward the first electrode, and opposes the first electrode to be placed on the semiconductor substrate; a MIM reflector formed between the first electrode and the second electrode by sandwiching the insulating layer; a resonator adjoining of the MIM reflector and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; an active element placed at the substantially central part of the resonator; a waveguide adjoining of the resonator and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate; and a horn apertural area adjoining of the waveguide and is placed between the first electrode and the second electrode which oppose on the semiconductor substrate.