Patents by Inventor Sami Musa

Sami Musa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090153861
    Abstract: The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible.
    Type: Application
    Filed: December 11, 2008
    Publication date: June 18, 2009
    Applicant: ASML Netherlands B.V.
    Inventors: Sami MUSA, Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Xiuhong Wei
  • Publication number: 20090147232
    Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 11, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Franciscus Van Haren, Sanjaysingh Lalbahadoersing, Sami Musa, Patrick Warnaar, Maya Angelova Doytcheva
  • Patent number: 7545520
    Abstract: A system and method for determining parameters such as critical dimension of a patterned structure and best focus condition of a lithographic apparatus, based on measurement of the intensity of a non-zero order of light diffracted from an experimental structure. The experimental structure includes a first array of lines and partially filled spaces having a period longer than the wavelength of the diffracted light. The experimental structure also includes a second array of lines and spaces, where the second array of lines and spaces comprise the partially filled spaces.
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: June 9, 2009
    Assignee: ASML Netherlands B.V.
    Inventors: Hyun-Woo Lee, Sami Musa
  • Patent number: 7460231
    Abstract: An alignment tool for a lithographic apparatus illuminates an alignment mark on a substrate with an alignment beam and measures the reflected spectrum. The reflected spectrum is compared with a reference mark to determine any misalignment. A blazed sub-wavelength grating is used to deflect the sub-beams created by diffracting the alignment beam from the alignment mark onto the reference mark.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: December 2, 2008
    Assignee: ASML Netherlands B.V.
    Inventors: Sami Musa, Richard Johannes Franciscus Van Haren, Maurits Van Der Schaar
  • Publication number: 20080111995
    Abstract: A system and method for determining parameters such as critical dimension of a patterned structure and best focus condition of a lithographic apparatus, based on measurment of the intensity of a non-zero order of light diffracted from an experimental structure. The experimental structure includes a first array of lines and partially filled spaces having a period longer than the wavelength of the diffracted light. The experimental structure also includes a second array of lines and spaces, where the second array of lines and spaces comprise the partially filled spaces.
    Type: Application
    Filed: November 15, 2006
    Publication date: May 15, 2008
    Applicant: ASML Netherlands B.V.
    Inventors: Hyun-Woo Lee, Sami Musa
  • Publication number: 20070222990
    Abstract: An alignment tool for a lithographic apparatus illuminates an alignment mark on a substrate with an alignment beam and measures the reflected spectrum. The reflected spectrum is compared with a reference mark to determine any misalignment. A blazed sub-wavelength grating is used to deflect the sub-beams created by diffracting the alignment beam from the alignment mark onto the reference mark.
    Type: Application
    Filed: March 27, 2006
    Publication date: September 27, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Sami Musa, Richard Johannes Van Haren, Maurits Schaar
  • Publication number: 20070212649
    Abstract: A double patterning system and process using a carbon-based hard mask. The double patterning system provides a means to form hard mask features in single hard mask etch step with a feature spacing smaller than a minimum spacing printable in the hard mask based on a single exposure.
    Type: Application
    Filed: March 7, 2006
    Publication date: September 13, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Sanjaysingh Lalbahadoersing, Sami Musa
  • Publication number: 20070212652
    Abstract: A method for alignment mark preservation includes a step of preparing a lower alignment mark structure on a substrate. In one configuration of the invention, the alignment mark structure includes a lower trench. In a further step, a hard mask coating is applied to a substrate that includes the alignment marks. Preferably, the hard mask material is an amorphous carbon material. In a further step, a selected portion of the hard mask located above the lower alignment mark structure is exposed to a dose of radiation. In one aspect of the invention, the surface of regions of the hard mask coating that receive the dose of radiation become elevated with respect to other regions of the hard mask surface. For those elevated regions of the hard mask that are aligned with an underlying alignment mark trench, the elevated regions serve as an alignment mark that preserves the original horizontal position of the underlying alignment mark.
    Type: Application
    Filed: March 8, 2006
    Publication date: September 13, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Sanjaysingh Lalbahadoersing, Sami Musa
  • Publication number: 20070212648
    Abstract: A double patterning system and process using a carbon-based hard mask. The double patterning system provides a means to form hard mask features in single hard mask etch step with a feature spacing smaller than a minimum spacing printable in the hard mask based on a single exposure.
    Type: Application
    Filed: March 5, 2007
    Publication date: September 13, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Sanjaysingh Lalbahadoersing, Sami Musa
  • Publication number: 20070132996
    Abstract: Alignment marks for use on substrates. An exemplary implementation provides phase depth control. A grating mark, for example, can be etched on a silicon wafer with sub-wavelength segmentation in the spacing portion of the alignment grating's period. The sub-wavelength segmentation can be applied to the spaces or to the lines, or both, of an alignment grating to control the phase depth of the grating. By applying segmentation with a period smaller than the alignment light wavelength in either the space(s) and/or in the line(s) of the grating, the effective refractive index in that region can be manipulated. This change in the effective index will result in a change in the phase depth (optical path length). By varying the duty cycle of the sub-wavelength segmented region, the effective refractive index can be controlled, thereby providing selective control over the phase depth.
    Type: Application
    Filed: November 30, 2006
    Publication date: June 14, 2007
    Applicant: ASML Netherlands B.V.
    Inventors: Richard Johannes Van Haren, Sami Musa
  • Publication number: 20070114678
    Abstract: The present invention relates to alignment marks for use on substrates, the alignment marks consisting of periodic 2-dimensional arrays of structures, the spacing of the structures being smaller than an alignment beam but larger than an exposure beam and the width of the structures varying sinusoidally from one end of an array to the other.
    Type: Application
    Filed: November 22, 2005
    Publication date: May 24, 2007
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Van Haren, Sami Musa
  • Publication number: 20060279735
    Abstract: Application of 2-Dimensional Photonic Crystals in Alignment Devices Alignment marks for use on substrates. In one example, the alignment marks consist of periodic 2-dimensional arrays of structures, the spacing of the structures being smaller than an alignment beam but larger than an exposure beam.
    Type: Application
    Filed: June 1, 2006
    Publication date: December 14, 2006
    Applicant: ASML Netherlands B.V.
    Inventors: Richard Johannes Van Haren, Sami Musa