Patents by Inventor Sampson X. Huang

Sampson X. Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6222390
    Abstract: Briefly, in accordance with one embodiment of the invention, an integrated circuit includes: two transistors coupled together in the integrated circuit so that upon the application of complementary voltage signals, electrical charge is substantially evenly distributed between output nodes. Briefly, in accordance with one more embodiment of the invention, an integrated circuit includes: a charge recycle circuit including two transistors. Briefly, in accordance with another embodiment of the invention, an integrated circuit includes: a charge recycle circuit including a first and second transistor coupled so as to respectively receive complementary voltage signals at the control voltage port of the first and second transistors. The transistors have a threshold voltage level different from the threshold voltage level of other transistors coupled to the charge recycle circuit.
    Type: Grant
    Filed: January 31, 2000
    Date of Patent: April 24, 2001
    Assignee: Intel Corporation
    Inventor: Sampson X. Huang
  • Patent number: 6097220
    Abstract: Briefly, in accordance with one embodiment of the invention, an integrated circuit includes: two transistors coupled together in the integrated circuit so that upon the application of complementary voltage signals, electrical charge is substantially evenly distributed between output nodes. Briefly, in accordance with one more embodiment of the invention, an integrated circuit includes: a charge recycle circuit including two transistors. Briefly, in accordance with another embodiment of the invention, an integrated circuit includes: a charge recycle circuit including a first and second transistor coupled so as to respectively receive complementary voltage signals at the control voltage port of the first and second transistors. The transistors have a threshold voltage level different from the threshold voltage level of other transistors coupled to the charge recycle circuit.
    Type: Grant
    Filed: June 11, 1997
    Date of Patent: August 1, 2000
    Assignee: Intel Corporation
    Inventor: Sampson X. Huang