Patents by Inventor Sandra Guy Malhotra

Sandra Guy Malhotra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7825516
    Abstract: In integrated circuit technology; an electromigration and diffusion sensitive conductor of a metal such as copper and processing procedure therefore is provided, wherein, at a planarized chemical mechanical processed interfacing surface, the conductor metal is positioned in a region of a selectable low K eff dielectric material surrounded by a material selected to be protection from outdiffusion and a source of a film thickness cap that is to form over the conductor metal and/or serve as a catalytic layer for electroless selective deposition of a CoWP capping .
    Type: Grant
    Filed: December 11, 2002
    Date of Patent: November 2, 2010
    Assignee: International Business Machines Corporation
    Inventors: Stefanie Ruth Chiras, Michael Wayne Lane, Sandra Guy Malhotra, Fenton Reed Mc Feely, Robert Rosenberg, Carlos Juan Sambucetti, Philippe Mark Vereecken
  • Patent number: 7247946
    Abstract: Disclosed is a procedure to coat the free surface of Cu damascene lines by a 1-5 nm thick element prior to deposition of the inter-level dielectric or dielectric diffusion barrier layer. The coating provides protection against oxidation, increases the adhesion strength between the Cu and dielectric, and reduces interface diffusion of Cu. In addition, the thin cap layer further increases electromigration Cu lifetime and reduces the stress induced voiding. The selective elements can be directly deposited onto the Cu embedded within the under layer dielectric without causing an electric short circuit between the Cu lines. These chosen elements are based on their high negative reduction potentials with oxygen and water, and a low solubility in and formation of compounds with Cu.
    Type: Grant
    Filed: January 18, 2005
    Date of Patent: July 24, 2007
    Assignee: International Business Machines Corporation
    Inventors: John Bruley, Roy A. Carruthers, Lynne Marie Gignac, Chao-Kun Hu, Eric Gerhard Liniger, Sandra Guy Malhotra, Stephen M. Rossnagel
  • Publication number: 20040113277
    Abstract: In integrated circuit technology; an electromigration and diffusion sensitive conductor of a metal such as copper and processing procedure therefore is provided, wherein, at a planarized chemical mechanical processed interfacing surface, the conductor metal is positioned in a region of a selectable low K eff dielectric material surrounded by a material selected to be protection from outdiffusion and a source of a film thickness cap that is to form over the conductor metal and/or serve as a catalytic layer for electroless selective deposition of a CoWP capping layer.
    Type: Application
    Filed: December 11, 2002
    Publication date: June 17, 2004
    Inventors: Stefanie Ruth Chiras, Michael Wayne Lane, Sandra Guy Malhotra, Fenton Reed Mc Feely, Robert Rosenberg, Carlos Juan Sambucetti, Philippe Mark Vereecken
  • Patent number: 6660330
    Abstract: The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: December 9, 2003
    Assignee: International Business Machines Corporation
    Inventors: Peter S. Locke, Sandra Guy Malhotra, Fenton Read McFeely, Andrew Herbert Simon, John Jacob Yurkas
  • Publication number: 20020146903
    Abstract: The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.
    Type: Application
    Filed: April 10, 2001
    Publication date: October 10, 2002
    Applicant: International Business Machines Corporation
    Inventors: Peter S. Locke, Sandra Guy Malhotra, Fenton Read McFeely, Andrew Herbert Simon, John Jacob Yurkas
  • Patent number: 6380075
    Abstract: A method for forming an open-bottom liner for a conductor in an electronic structure and devices formed are disclosed. In the method, a pre-processed electronic substrate that has a dielectric layer on top is first provided. Via openings are then formed in a dielectric layer to expose an underlying conductive layer. The electronic substrate is then positioned in a cold-wall, low pressure chemical vapor deposition chamber, while the substrate is heated to a temperature of at least 350° C. A precursor gas is then flowed into the CVD chamber to a partial pressure of not higher than 10 mTorr, and metal is deposited from the precursor gas onto sidewalls of the via openings while bottoms of the via openings are substantially uncovered by the metal. The present invention method may be further enhanced by, optionally, modifications of a I-PVD technique or a seed layer deposition technique.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: April 30, 2002
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Chao-Kun Hu, Sandra Guy Malhotra, Fenton Read McFeely, Stephen Mark Rossnagel, Andrew Herbert Simon