Patents by Inventor Sang-Gu Kang

Sang-Gu Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150226783
    Abstract: A wafer test system includes a probe card and a test controller. The probe card is connected to at least one device under test (DUT) disposed on a wafer, and is configured to limit a current flowing into the at least one DUT to be about equal to or less than a threshold current. The test controller is configured to control an amplitude of the threshold current.
    Type: Application
    Filed: January 16, 2015
    Publication date: August 13, 2015
    Inventor: SANG-GU KANG
  • Patent number: 8963091
    Abstract: A signal detecting circuit of an infrared sensor includes: a cell array in which bolometers sensing infrared rays and outputting signal currents are arranged in an N×M format; a level generator that outputs a plurality of bias voltages corresponding to a plurality of bias levels; N resistor non-uniformity correcting circuits that are located in a column direction of the cell array and supply different bias voltages to each of the bolometers; M resistor non-uniformity correcting circuits that are located in a row direction of the cell array and supply different bias voltages to each of the bolometers; a control unit that sets a bias voltage level of each resistor non-uniformity correcting circuit to correct the resistor non-uniformity of the cell array; and N integrators that integrate the signal currents output from the cell array.
    Type: Grant
    Filed: October 30, 2012
    Date of Patent: February 24, 2015
    Assignee: Agency for Defense Development
    Inventors: Chi-Yeon Kim, Kang-Il Lee, Sun-Ho Kim, Hyun-Jin Choi, Nam-Hwan Kim, Sang-Gu Kang
  • Publication number: 20140231651
    Abstract: A signal detecting circuit of an infrared sensor includes: a cell array in which bolometers sensing infrared rays and outputting signal currents are arranged in an N×M format; a level generator that outputs a plurality of bias voltages corresponding to a plurality of bias levels; N resistor non-uniformity correcting circuits that are located in a column direction of the cell array and supply different bias voltages to each of the bolometers; M resistor non-uniformity correcting circuits that are located in a row direction of the cell array and supply different bias voltages to each of the bolometers; a control unit that sets a bias voltage level of each resistor non-uniformity correcting circuit to correct the resistor non-uniformity of the cell array; and N integrators that integrate the signal currents output from the cell array.
    Type: Application
    Filed: October 30, 2012
    Publication date: August 21, 2014
    Inventors: Chi-Yeon Kim, Kang-Il Lee, Sun-Ho Kim, Hyun-Jin Choi, Nam-Hwan Kim, Sang-Gu Kang
  • Patent number: 8520434
    Abstract: Provided is a method of storing configuration data regarding an operating environment of a flash memory device, which includes a memory cell array having an electrical fuse (E-Fuse) block for storing the configuration data. The method includes storing the configuration data in multiple strings of the E-Fuse block, each string including multiple memory cells configured to store one bit.
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: August 27, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-gu Kang, Young-ho Lim
  • Patent number: 8493784
    Abstract: A method of programming a nonvolatile memory device comprises applying a program voltage to a selected wordline to program selected memory cells, and performing a verify operation by applying a verify voltage to the selected wordline to determine the programming status of the selected memory cells. The verify operation applies the verify voltage to the selected wordline at least two different times to divide the selected memory cells into at least three regions corresponding to different threshold voltage ranges.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: July 23, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang Gu Kang
  • Patent number: 8493087
    Abstract: A probe card transmitting electrical test signals between a tester and a semiconductor device includes a main circuit board configured to receive and transmit electrical signals from the tester, an interface unit electrically connected to the main circuit board, the interface unit including a signal line and a signal connection terminal, and at least one probe unit connected to the interface unit, the probe unit being detachable and including a plurality of probe needles arranged in a pattern corresponding to a pattern of electrode pads of the semiconductor device.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: July 23, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang-Hyun Cho, Joonyeon Kim, Sang-Gu Kang, Sanghoon Lee
  • Patent number: 8395943
    Abstract: A flash memory device includes a memory cell array having a set-up data region configured to store set-up data, wherein the set-up data includes first data and second data. The second data is stored in an empty cell area of the set-up data region. The flash memory also includes a page buffer and decoder configured to read the set-up data from the set-up data region, and a status detector receiving the set-up data from the page buffer and decoder and configured to discriminate the first data from the second data and generate a Pass/Fail status signal.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: March 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang-Gu Kang
  • Patent number: 8358544
    Abstract: A nonvolatile semiconductor memory device includes a string selection transistor coupled to a bit line. The device also includes a plurality of memory cells coupled in series to the string selection transistor, wherein at least one of the memory cells is configured to be in a programmed state during an erase procedure of the plurality of memory cells.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: January 22, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang-gu Kang
  • Publication number: 20120320675
    Abstract: A method of programming a nonvolatile memory device comprises applying a program voltage to a selected wordline to program selected memory cells, and performing a verify operation by applying a verify voltage to the selected wordline to determine the programming status of the selected memory cells. The verify operation applies the verify voltage to the selected wordline at least two different times to divide the selected memory cells into at least three regions corresponding to different threshold voltage ranges.
    Type: Application
    Filed: August 29, 2012
    Publication date: December 20, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sang Gu KANG
  • Patent number: 8279680
    Abstract: A method of programming a nonvolatile memory device comprises applying a program voltage to a selected wordline to program selected memory cells, and performing a verify operation by applying a verify voltage to the selected wordline to determine the programming status of the selected memory cells. The verify operation applies the verify voltage to the selected wordline at least two different times to divide the selected memory cells into at least three regions corresponding to different threshold voltage ranges.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: October 2, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang Gu Kang
  • Patent number: 8243530
    Abstract: A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.
    Type: Grant
    Filed: February 26, 2010
    Date of Patent: August 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Gu Kang, Hee-Won Lee, Ju-Seok Lee, Jung-Ho Song
  • Publication number: 20120155184
    Abstract: A nonvolatile semiconductor memory device includes a string selection transistor coupled to a bit line. The device also includes a plurality of memory cells coupled in series to the string selection transistor, wherein at least one of the memory cells is configured to be in a programmed state during an erase procedure of the plurality of memory cells.
    Type: Application
    Filed: February 28, 2012
    Publication date: June 21, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sang-gu Kang
  • Publication number: 20120120731
    Abstract: A method of programming a nonvolatile memory device comprises applying a program voltage to a selected wordline to program selected memory cells, and performing a verify operation by applying a verify voltage to the selected wordline to determine the programming status of the selected memory cells. The verify operation applies the verify voltage to the selected wordline at least two different times to divide the selected memory cells into at least three regions corresponding to different threshold voltage ranges.
    Type: Application
    Filed: January 17, 2012
    Publication date: May 17, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sang Gu KANG
  • Patent number: 8179732
    Abstract: A flash memory device includes a chip disable fuse circuit that has a fuse and that outputs a chip disable signal when the fuse is cut out, and a ready/busy control circuit that forcibly activates a ready/busy signal representing an internal operational state in response to the chip disable signal and externally outputs the ready/busy signal through a ready/busy output pin.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: May 15, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang-gu Kang
  • Patent number: 8154929
    Abstract: Disclosed is a flash memory device and a program-verify method. The flash memory device includes; a plurality of memory cells connected between a bit line and a common source line, and a data input/output circuit connected to the bit line and configured to store program data for a selected one of the plurality memory cells. The data input/output circuit maintains the program data during a program-verify operation and controls a voltage level on the bit line in accordance with the program data.
    Type: Grant
    Filed: June 10, 2009
    Date of Patent: April 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang-Gu Kang
  • Patent number: 8149620
    Abstract: A nonvolatile semiconductor memory device includes a string selection transistor coupled to a bit line. The device also includes a plurality of memory cells coupled in series to the string selection transistor, wherein at least one of the memory cells is configured to be in a programmed state during an erase procedure of the plurality of memory cells.
    Type: Grant
    Filed: March 2, 2009
    Date of Patent: April 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang-gu Kang
  • Patent number: 8120967
    Abstract: A method of programming a nonvolatile memory device comprises applying a program voltage to a selected wordline to program selected memory cells, and performing a verify operation by applying a verify voltage to the selected wordline to determine the programming status of the selected memory cells. The verify operation applies the verify voltage to the selected wordline at least two different times to divide the selected memory cells into at least three regions corresponding to different threshold voltage ranges.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: February 21, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang Gu Kang
  • Patent number: 8068361
    Abstract: A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: November 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Gu Kang, Hee-won Lee, Ju Seok Lee, Jung-Ho Song
  • Publication number: 20110286278
    Abstract: Provided is a method of storing configuration data regarding an operating environment of a flash memory device, which includes a memory cell array having an electrical fuse (E-Fuse) block for storing the configuration data. The method includes storing the configuration data in multiple strings of the E-Fuse block, each string including multiple memory cells configured to store one bit.
    Type: Application
    Filed: August 4, 2011
    Publication date: November 24, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-gu KANG, Young-ho LIM
  • Patent number: RE46238
    Abstract: A method of programming a nonvolatile memory device comprises applying a program voltage to a selected wordline to program selected memory cells, and performing a verify operation by applying a verify voltage to the selected wordline to determine the programming status of the selected memory cells. The verify operation applies the verify voltage to the selected wordline at least two different times to divide the selected memory cells into at least three regions corresponding to different threshold voltage ranges.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: December 13, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sang Gu Kang