Abstract: Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Abstract: A lock-in imaging system is configured for detecting a disturbance in air. The system includes an airplane, an interferometer, and a telescopic imaging camera. The airplane includes a fuselage and a pair of wings. The airplane is configured for flight in air. The interferometer is operatively disposed on the airplane and configured for producing an interference pattern by splitting a beam of light into two beams along two paths and recombining the two beams at a junction point in a front flight path of the airplane during flight. The telescopic imaging camera is configured for capturing an image of the beams at the junction point. The telescopic imaging camera is configured for detecting the disturbance in air in an optical path, based on an index of refraction of the image, as detected at the junction point.

Abstract: Disclosed is a system and method for characterizing optical materials, using steps and equipment for generating a coherent laser light, filtering the light to remove high order spatial components, collecting the filtered light and forming a parallel light beam, splitting the parallel beam into a first direction and a second direction wherein the parallel beam travelling in the second direction travels toward the material sample so that the parallel beam passes through the sample, applying various physical quantities to the sample, reflecting the beam travelling in the first direction to produce a first reflected beam, reflecting the beam that passes through the sample to produce a second reflected beam that travels back through the sample, combining the second reflected beam after it travels back though the sample with the first reflected beam, sensing the light beam produced by combining the first and second reflected beams, and processing the sensed beam to determine sample characteristics and properties.

Abstract: A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

Abstract: A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.

Abstract: Provided is a deep brain stimulation (DBS) device using a wireless power transmission mechanism to wirelessly receive microwaves from a power transmission antenna installed at a hat put on a patient, transform the microwaves into power, and drive electrodes implanted into a brain of the patient using the power so as to correct abnormal motor and sensory functions of the patient using power which is wirelessly transmitted from an outside into a body of the patient. The DBS device includes: a hat module which is installed at a hat put on a head of the patient to transmit microwaves; and an implantation module which is implanted through a skull under a scalp to contact the cerebral nerve of the patient, receives the microwaves from the hat module, transforms the microwaves into direct current (DC) power, and stimulates the cerebral nerve using the DC power.

Abstract: Provided is a deep brain stimulation (DBS) device having power wirelessly fed by a magnetic induction to form a rotating magnetic field using a rotating magnetic field disk installed inside a hat put on a patient and generate induced power using an induction coil plate fixed underneath a scalp of the patient to be combined with the rotating magnetic field, to drive electrodes implanted into a brain of the patient so as to correct abnormal motor and sensory functions of the patient using power wirelessly fed from an outside into a body of the patient. The DBS device includes: a hat module which is installed inside a hat put on a head of the o patient to generate a rotating magnetic field; and an implantation module which is implanted through a skull under a scalp to contact a nervous system of the patient and combined with the rotating magnetic field of the hat module to stimulate the cerebral nerve using induced power generated by the magnetic induction.

Abstract: Provided is a neural electronic interface (NEI) device for motor and sensory controls of a human body, into which wireless technology, a smart micro-sensor, and a nano probe pin device (PPD) are integrated and which is implanted into a brain of a patient having abnormal motor and sensory functions to monitor activities of a cerebral nerve or stimulate a cerebral nerve. The NEI device includes: a deep brain monitoring and stimulation (DBMS) module which is implanted through a skull to contact the cerebral nerve of the patient; and a hat module which is installed at a hat put on a head of the patient, wirelessly supplies power to the DBMS module, and performs a wireless communication with the DBMS module to transmit a control signal to control the DBMS module according to nervous system data monitored and fed back from the DBMS module.

Abstract: A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90°, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

Abstract: A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90°, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.

Abstract: A microwave rectenna based sensor array is disclosed, which can remotely detect and monitor the planarity and curvature change of the surface of a structure, irrespective of the size or shape of the structure, by using a microwave signal.

Abstract: Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Abstract: A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

Abstract: A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle ? is set equal to (?B??) where ?B is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and ? is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (?B+?). The material can be rotated through an angle of azimuthal rotation ? about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.

Abstract: A method provides X-ray diffraction data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symmetry belonging to different space groups. The material is mounted in an X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle ? is set equal to (?B??) where ?B is a Bragg angle for a designated crystal plane of the alloy that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and ? is the angle between the designated crystal plane and a {111} crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (?B+?). The material can be rotated through an angle of azimuthal rotation ? about the axis aligned with the material. Using the detector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.