Abstract: An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.

Abstract: A digital exposure method and a digital exposure device for performing the method are disclosed. In the method, a graphic data system file is produced in correspondence with each of a plurality of patterns formed on a substrate. Then, a digital micromirror device on/off data is generated from the graphic data system file. Then, the substrate is exposed in response to the digital micromirror device on/off data. Thus, at least a first exposure for forming a first pattern of a display panel, and a second exposure for forming identification numbers of a substrate and each display panel and removing an edge portion of the substrate may be simultaneously performed, to simplify the exposure process decrease costs.

Abstract: A photoresist composition, a method of forming a pattern using the photoresist composition, and a method of manufacturing a display substrate are disclosed. A photoresist composition includes an alkali-soluble resin, a quinone diazide-based compound, a multivalent phenol-based compound, and a solvent. Therefore, photosensitivity for light having a wavelength in a range of about 392 nm to about 417 nm may be improved, and reliability of forming a photo pattern and a thin film pattern using the photoresist composition may be improved.

Abstract: A digital exposure apparatus includes a displaceable stage, a light source part, a digital micro mirror part and a micro lens part. A substrate is disposed on the stage. The light source part generates a first light. The digital micro mirror part is disposed over the stage. The digital micro mirror part includes a plurality of digital micro mirrors. The digital micro mirror converts the first light into one or more second light beams. The micro lens part is disposed between the stage and the digital micro mirror part and includes a plurality of micro lenses. The micro lenses convert the one or more second light beams into one or more third light beams which are irradiated upon the substrate. The third light has an oval cross sectional shape.

Abstract: A method for manufacturing a photosensitive film pattern includes: forming a thin film on a substrate; forming a photosensitive film on the thin film; arranging an exposure apparatus including a photo-modulation element on the photosensitive film; exposing the photosensitive film using the exposure apparatus according to an exposure pattern of the photo-modulation element; and developing the exposed photosensitive film to form a photosensitive film pattern. The exposure pattern includes a main pattern of a quadrangular shape and a at least one assistance pattern positioned at a corner of the main pattern. The photosensitive film pattern has a quadrangular shape with a long edge and a short edge, and a corner with a curved surface having a curvature radius of 20% to 40% of a length of the short edge.

Abstract: A photosensitive composition and a method of manufacturing a substrate used for a display device are disclosed. The photosensitive composition includes an acrylic based copolymer, a photo-initiator, a photo-sensitizer and a solvent. Thus, a photosensitivity of the photosensitive composition for ultra violet light of a long wavelength may be improved.

Abstract: A method of forming a photosensitive pattern on a substrate with a photosensitive layer disposed thereon may include moving at least one of the substrate and a set of micro-mirrors in a first direction, the set of micro-mirrors being disposed above the substrate and being arranged as an array, the array having a first edge extending in a second direction, the second direction being at an acute angle with respect to the first direction. The method may also include selectively turning on one or more micro-mirrors of the set of micro-mirrors according to a position of the set of micro-mirrors relative to the photosensitive layer, thereby irradiating one or more spot beams on the photosensitive layer. The photosensitive layer exposed by the spot beams is developed to form a photosensitive pattern having an edge portion extending in a third direction crossing the first and second directions.

Abstract: A photoresist composition and method of forming pattern using the same are provided. The photoresist composition contains an alkali-soluble novolac resin, a photosensitizer including a compound of Chemical Formula 1, and a solvent.

Abstract: A photoresist composition is provided. The photoresist composition includes an alkali-soluble resin; a photosensitizer containing a first compound that contains a diazonaphthoquinone represented by Formula 1 and a second compound that contains a diazonaphthoquinone represented by Formula 2; and a solvent. and R1 is selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbons, an alkenyl group having 2 to 4 carbons, a cycloalkyl group having 3 to 8 carbons, and an aryl group having 6 to 12 carbons, and R2 is selected from the group consisting of Cl, F, Br, and I.

Abstract: In a photoresist composition suitable for forming a photoresist pattern having a high profile angle, and a method of forming a photoresist pattern using the same, the photoresist composition includes an alkali-soluble resin, a quinone diazide containing compound, a compound represented by Formula 1, and a solvent: wherein R1, R2 and R3 are independently H, C1-4 alkyl, C2-4 alkenyl, C3-8 cycloalkyl, or C6-12 aryl.

Abstract: An approach for patterning and etching without a mask is provided in a manufacturing a thin-film transistor, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer and source metal layer of a substrate. A first photoresist pattern including a first photo pattern and a second photo pattern is formed using a digital exposure device by generating a plurality of spot beams, the first photo pattern is formed to a first region of the base substrate and has a first thickness, and the second photo pattern is formed to a second region adjacent to the first region, and has a second thickness and a width in a range of about 50% to about 60% of a diameter of the spot beam. The source metal layer is patterned to form a source electrode and a drain electrode, and the source electrode and the drain electrode are spaced apart from each other in the first region of an active pattern.

Abstract: A digital exposure method and a digital exposure device for performing the method are disclosed. In the method, a graphic data system file is produced in correspondence with each of a plurality of patterns formed on a substrate. Then, a digital micromirror device on/off data is generated from the graphic data system file. Then, the substrate is exposed in response to the digital micromirror device on/off data. Thus, at least a first exposure for forming a first pattern of a display panel, and a second exposure for forming identification numbers of a substrate and each display panel and removing an edge portion of the substrate may be simultaneously performed, to simplify the exposure process decrease costs.

Abstract: An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.

Abstract: A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.

Abstract: A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.

Abstract: An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.

Abstract: The present invention relates to a photoresist composition for digital exposure and a method of fabricating a thin film transistor substrate. The photoresist composition for digital exposure includes a binder resin including a novolak resin and a compound represented by the chemical formula (1), a photosensitizer including a diazide-based compound, and a solvent: wherein R1-R9 each include a hydrogen atom, an alkyl group, or a benzyl group, a is an integer from 0 to 10, b is an integer from 0 to 100, and c is an integer from 0 to 10.

Abstract: A photoresist composition includes a novolac resin, a benzophenone photosensitizer and an ethylidyne tris phenol photosensitizer, and an organic solvent. Thus, a micropattern having a higher resolution than the resolution of an exposure apparatus is formed to decrease an amount of exposure and/or exposure time, thereby improving manufacturing reliability and productivity.

Abstract: The present invention relates to a photoresist composition that comprises a resin that is represented by Formula 1, a method for forming a thin film pattern, and a method for manufacturing a thin film transistor array panel by using the same. Herein, R is a methylene group, and n is an integer of 1 or more.

Abstract: A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.