Patents by Inventor Sang-Ki Nam

Sang-Ki Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11798788
    Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: October 24, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Ki Nam, Sunggil Kang, Sungyong Lim, Beomjin Yoo, Akira Koshiishi, Vasily Pashkovskiy, Kwangyoub Heo
  • Patent number: 11664242
    Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.
    Type: Grant
    Filed: July 21, 2021
    Date of Patent: May 30, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Beom Jin Yoo, Min Hyoung Kim, Sang Ki Nam, Won Hyuk Jang, Kyu Hee Han, Young Do Kim, Jeong Min Bang
  • Publication number: 20230142436
    Abstract: Disclosed are plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus comprises a plasma electrode, a plasma edge ring on the plasma electrode, and a guide electrode outside an etching target on the plasma electrode. The plasma edge ring provides a placement hole that vertically penetrates a center of the plasma edge ring, and a recess on a portion of an inner lateral surface that defines the placement hole. The recess is outwardly recessed from the inner lateral surface.
    Type: Application
    Filed: July 15, 2022
    Publication date: May 11, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyunjoo LEE, Sang Ki NAM, Young Hyun JO
  • Publication number: 20230143327
    Abstract: Disclosed are focus rings, substrate processing apparatuses including the same, and substrate processing methods using the same. The focus ring comprises a first ring formed around an axis that extends in a first direction and a second ring separate from the first ring and formed around the axis. A portion of an inner lateral surface of the second ring is in contact with a portion of an outer lateral surface of the first ring. When viewed from a cross-sectional view from a direction perpendicular to the axis, a first angle between the outer lateral surface and the first direction is different from a second angle between the inner lateral surface and the first direction.
    Type: Application
    Filed: June 27, 2022
    Publication date: May 11, 2023
    Inventors: DONGSEOK HAN, Seunghan BAEK, KYUNG-SUN KIM, Nam Kyun KIM, SANG KI NAM, KUIHYUN YOON, KANGMIN JEON
  • Publication number: 20230072243
    Abstract: A substrate treatment apparatus including a chamber; a lower electrode in the chamber, wherein the substrate is on the lower electrode; an upper electrode in the chamber, and above the lower electrode; a pulse signal generator configured to generate a pulse signal; and a bias power supply configured to generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and supply the generated bias power to the lower electrode, wherein the bias power supply includes a DC power generator configured to receive the pulse signal and generate a direct-current (DC) voltage subjected to feedforward compensation based on the pulse signal; and a modulator configured to generate a power signal having a non-sinusoidal waveform using the DC voltage, and filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.
    Type: Application
    Filed: April 13, 2022
    Publication date: March 9, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyun Bae KIM, Ji Hwan KIM, Hyong Seo YOON, Sang Ki NAM, Hyun Jae LEE, Myung Geun JEONG
  • Publication number: 20230066724
    Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.
    Type: Application
    Filed: February 17, 2022
    Publication date: March 2, 2023
    Inventors: Se Jin OH, Doo Young GWAK, Tae Hyun KIM, Sang Ki NAM, Jae Ho JANG, Jin Kyou CHOI
  • Patent number: 11594400
    Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: February 28, 2023
    Assignee: Lam Research Corporation
    Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
  • Patent number: 11545372
    Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: January 3, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Beom Jin Yoo, Min Hyoung Kim, Sang Ki Nam, Lu Siqing, Won Hyuk Jang, Kyu Hee Han
  • Patent number: 11538697
    Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.
    Type: Grant
    Filed: September 10, 2020
    Date of Patent: December 27, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Ki Nam, Jang-Yeob Lee, Sungyeol Kim, Sunghyup Kim, Soonam Park, Siqing Lu
  • Publication number: 20220351947
    Abstract: A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.
    Type: Application
    Filed: December 13, 2021
    Publication date: November 3, 2022
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kuihyun YOON, Sang Ki NAM, Kwonsang SEO, Sungho JANG, Jungmin KO, Nam Kyun KIM, Tae-Hyun KIM, Seunghan BAEK, Seungbin AHN, Jungmo YANG, Changheon LEE, Kangmin JEON
  • Publication number: 20210351047
    Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.
    Type: Application
    Filed: July 21, 2021
    Publication date: November 11, 2021
    Inventors: Beom Jin YOO, Min Hyoung KIM, Sang Ki NAM, Won Hyuk JANG, Kyu Hee HAN, Young Do KIM, Jeong Min BANG
  • Patent number: 11127571
    Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.
    Type: Grant
    Filed: January 23, 2020
    Date of Patent: September 21, 2021
    Assignee: Lam Research Corporation
    Inventors: Sang Ki Nam, Rajinder Dhindsa, James Rogers
  • Patent number: 11107705
    Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: August 31, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Beom Jin Yoo, Min Hyoung Kim, Sang Ki Nam, Won Hyuk Jang, Kyu Hee Han, Young Do Kim, Jeong Min Bang
  • Patent number: 10950414
    Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 16, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Ki Nam, Akira Koshiishi, Kwangyoub Heo, Sunggil Kang, Beomjin Yoo, Sungyong Lim, Vasily Pashkovskiy
  • Publication number: 20210074558
    Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 11, 2021
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Ki NAM, Jang-Yeob LEE, Sungyeol KIM, Sunghyup KIM, Soonam PARK, Siqing LU
  • Publication number: 20210057193
    Abstract: A hollow cathode includes an insulation plate having cathode holes. Bottom electrodes are below the insulation plate. The bottom electrodes define first holes having a width greater than a width of the cathode holes. Top electrodes are at an opposite side of the insulation plate from the bottom electrodes. The top electrodes define second holes aligned with the first holes along a direction orthogonal to the upper surface of the insulation plate.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: SANG KI NAM, SUNGGIL KANG, SUNGYONG LIM, BEOMJIN YOO, AKIRA KOSHIISHI, VASILY PASHKOVSKIY, KWANGYOUB HEO
  • Patent number: 10901007
    Abstract: An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: January 26, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Do Kim, Sung Yong Lim, Chan Soo Kang, Do Hoon Kwon, Min Ju Kim, Sang Ki Nam, Jung Mo Yang, Jong Hun Pi, Kyu Hee Han
  • Patent number: 10795262
    Abstract: A method of manufacturing an integrated circuit (IC) device includes exposing a partial region of a photoresist film formed on a main surface of a substrate to generate acid, and diffusing the acid in the partial region of the photoresist film. Diffusing the acid may include applying an electric field, in a direction perpendicular to a direction in which the main surface of the substrate extends, to the photoresist film using an electrode facing the substrate through an electric-field transmission layer filling between the photoresist film and the electrode. The electric-field transmission layer may include an ion-containing layer or a conductive polymer layer.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: October 6, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., Research & Business Foundation SUNGYUNKWAN UNIVERSITY
    Inventors: Jin Park, Sang Ki Nam, Kyu-hee Han, Jin-ok Kim, Jin-hong Park, Gwang-we Yoo
  • Publication number: 20200243307
    Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.
    Type: Application
    Filed: April 10, 2020
    Publication date: July 30, 2020
    Inventors: Ryan Bise, Rajinder Dhindsa, Alexei Marakhtanov, Lumin Li, Sang Ki Nam, Jim Rogers, Eric Hudson, Gerardo Delgadino, Andrew D. Bailey, III, Mike Kellogg, Anthony de la Llera, Darrell Ehrlich
  • Publication number: 20200161097
    Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.
    Type: Application
    Filed: January 23, 2020
    Publication date: May 21, 2020
    Inventors: Sang Ki Nam, Rajinder Dhindsa, James Rogers