Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a second weight average molecular weight and a second base material. A slurry composition is prepared by mixing the additive composition, a polishing particle composition, and water. When implementing a chemical mechanical polishing using the slurry composition, a favorable polishing selectivity is realized.

Abstract: Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

Abstract: A method of forming a thin film is provided. The method includes introducing an organometallic compound represented by the following formula onto a substrate; wherein M represents a metal in listed in Group 4A of the periodic table of elements, R1, R2 and R3 independently represent hydrogen or an alkyl group having a carbon number from 1 to 5, and X represents hydrogen or an alkyl group having a carbon number from 1 to 5 and then chemisorbing a portion of the organometallic compound on the substrate. The method further includes removing a non-chemisorbed portion of the organometallic compound from the substrate, providing an oxidizing agent onto the substrate and forming a thin film including a metal oxide on the substrate by chemically reacting the oxidizing agent with a metal in the organometallic compound and by separating ligands of the organometallic compound.

Abstract: In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.

Abstract: An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.

Abstract: In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.

Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.

Abstract: A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

Abstract: An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a second weight average molecular weight and a second base material. A slurry composition is prepared by mixing the additive composition, a polishing particle composition, and water. When implementing a chemical mechanical polishing using the slurry composition, a favorable polishing selectivity is realized.

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract: In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.

Abstract: In a method and an apparatus for inspecting a wafer surface, a wafer is loaded into a chamber. An incident light including a first light for sensing a vertical position of the wafer and a second light for inspecting the wafer surface is irradiated onto the wafer. The first light is reflected on an inspection region or a next inspection region of the wafer and is detected to control a wafer position. The second light is scattered on the inspection region and is detected to inspect the wafer surface of the inspection region. Position information of a wafer is examined and a position of the wafer is adjusted before inspecting a surface of inspection region of a wafer so as to enable accurate inspection of the wafer surface.

Abstract: An additive composition for a slurry contains a first salt of polymeric acid including a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid including a second polymeric acid having a second weight average molecular weight and a second base material. A slurry composition is prepared by mixing the additive composition, a polishing particle composition, and water. When implementing a chemical mechanical polishing using the slurry composition, a favorable polishing selectivity is realized.

Abstract: In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

Abstract: Semiconductor wafers utilize asymmetric edge profiles (EP) to facilitate higher yield semiconductor device processing. These edge profiles are configured to reduce the volume of thin film residues that may form on a top surface of a semiconductor wafer at locations adjacent a peripheral edge thereof. These edges profiles are also configured to inhibit redeposition of residue particulates on the top surfaces of the wafers during semiconductor processing steps. Such steps may include surface cleaning and rinsing steps that may include passing a cleaning or rinsing solution across a wafer or batch of wafers that are held by a cartridge and submerged in the solution.

Abstract: In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate, M[L1]x[L2]y where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.

Abstract: A resist removing composition having a superior capability for removing a resist, polymer, organometallic polymer and etching by-products such as metal oxide, which does not attack underlying layers exposed to the composition and which does not leave residues after a rinsing step. The resist removing composition contains alkoxy N-hydroxyalkyl alkanamide and a swelling agent.

Abstract: A passivation layer pattern having an opening is formed on a substrate having a metal wiring pattern formed thereon. The opening partially exposes an upper surface of the metal wiring pattern. A photoresist pattern is formed on the passivation layer pattern. The photoresist pattern has an opening that exposes the opening of the passivation layer pattern, and metal is electroplated in the openings to form a bump electrode. The photoresist pattern is removed using a composition including monoethanolamine and dimethylacetamide.