Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: A transformer is described. The transformer includes a primary coil and a first secondary coil. A first coupling occurs between the first secondary coil and the primary coil. The transformer also includes a second secondary coil. A second coupling occurs between the second secondary coil and the primary coil. The first secondary coil is separated from the second secondary coil to prevent coupling between the first secondary coil and the second secondary coil. A first width of the first secondary coil is configured independently of a second width of the second secondary coil.

Abstract: Certain aspects of the present invention provide methods and apparatus for detecting phase shift between signals, such as local oscillating signals in adjacent transceiver paths. One example circuit for phase detection generally includes a mixer configured to mix a first input signal having a first frequency with a second input signal having a second frequency to produce an output signal having frequency components at the sum of and the difference between the first and second frequencies; a filter connected with the mixer and configured to remove one of the frequency components at the sum of the first and second frequencies, thereby leaving a DC component; and an analog-to-digital converter (ADC) (e.g., a comparator) connected with the filter and configured to determine whether the first input signal is in-phase or out-of-phase with the second input signal based on a comparison between the DC component and a reference signal.

Abstract: Provided are a novel fluorene oxime ester compound, and a photopolymerization initiator and a photoresist composition containing the same.

Abstract: Certain aspects of the present invention provide methods and apparatus for detecting phase shift between signals, such as local oscillating signals in adjacent transceiver paths. One example circuit for phase detection generally includes a mixer configured to mix a first input signal having a first frequency with a second input signal having a second frequency to produce an output signal having frequency components at the sum of and the difference between the first and second frequencies; a filter connected with the mixer and configured to remove one of the frequency components at the sum of the first and second frequencies, thereby leaving a DC component; and an analog-to-digital converter (ADC) (e.g., a comparator) connected with the filter and configured to determine whether the first input signal is in-phase or out-of-phase with the second input signal based on a comparison between the DC component and a reference signal.

Abstract: A transformer is described. The transformer includes a primary coil and a first secondary coil. A first coupling occurs between the first secondary coil and the primary coil. The transformer also includes a second secondary coil. A second coupling occurs between the second secondary coil and the primary coil. The first secondary coil is separated from the second secondary coil to prevent coupling between the first secondary coil and the second secondary coil. A first width of the first secondary coil is configured independently of a second width of the second secondary coil.

Abstract: A method, an apparatus, and a computer program product are provided. The apparatus tunes a frequency provided by a VCO. The apparatus determines a relative capacitance change associated with a first frequency and a desired frequency from a look-up table. The apparatus adjusts a capacitor circuit in the VCO based on the determined relative capacitance change determined from the look-up table in order to tune from the first frequency to the desired frequency. The apparatus determines that the frequency provided by the VCO is a second frequency different than the desired frequency after adjusting the capacitor circuit. The apparatus performs an iterative search to further adjust the capacitor circuit when a difference between the second frequency and the desired frequency is greater than a threshold.

Abstract: Provided are a novel fluorene oxime ester compound, and a photopolymerization initiator and a photoresist composition containing the same.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: System for I-Q phase mismatch detection and correction. An apparatus to correct a phase mismatch between I and Q signals includes a correction circuit configured to continuously compare a reference signal and a phase error signal associated with the I and Q signals to generate an I bias signal and a Q bias signal, a first CMOS buffer configured to receive the I signal and the I bias signal and output a phase adjusted I signal based on the I bias signal, and a second CMOS buffer configured to receive the Q signal and the Q bias signal and output a phase adjusted Q signal based on the Q bias signal.

Abstract: A method for fabricating a semiconductor device includes forming a first dielectric structure over a second region of a substrate to expose a first region of the substrate, forming a barrier layer over an entire surface including the first dielectric structure, forming a second dielectric structure over the barrier layer in the first region, forming first open parts and second open parts in the first region and the second region, respectively, by etching the second dielectric structure, the barrier layer and the first dielectric structure, forming first conductive patterns filled in the first open parts and second conductive patterns filled in the second open parts, forming a protective layer to cover the second region, and removing the second dielectric structure.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: A method for fabricating a semiconductor device includes forming an isolation layer over a substrate, forming a plurality of open regions exposing the substrate by selectively etching the isolation layer, performing a surface treatment over the isolation layer, expanding the open regions by removing the surface-treated portion of the isolation layer, and forming a conductive layer in the expanded open regions.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: A method for fabricating a semiconductor device includes forming a first dielectric structure over a second region of a substrate to expose a first region of the substrate, forming a barrier layer over an entire surface including the first dielectric structure, forming a second dielectric structure over the barrier layer in the first region, forming first open parts and second open parts in the first region and the second region, respectively, by etching the second dielectric structure, the barrier layer and the first dielectric structure, forming first conductive patterns filled in the first open parts and second conductive patterns filled in the second open parts, forming a protective layer to cover the second region, and removing the second dielectric structure.

Abstract: A method for fabricating a semiconductor device is provided, the method includes forming a double trench including a first trench and a second trench formed below the first trench and having surfaces covered with insulation layers, and removing portions of the insulation layers to form a side contact exposing one sidewall of the second trench.

Abstract: In one embodiment of the invention, a method for a charge pump is disclosed. The method includes biasing a plurality of transistors; switching a pair of main transistor switches to apply or remove a net charge on an output terminal though the biased transistors; and turning on auxiliary transistor switches when the main transistor switches are turned off. The auxiliary transistor switches when turned on provide an auxiliary equalizing path to nodes between the main transistor switches and the biased transistors. The auxiliary equalizing path equalizes voltages between the intermediate nodes to rapidly turn off the biased transistors and reduce noise on the output terminal of the charge pump.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of active regions, each having a first sidewall and a second sidewall, by etching a semiconductor substrate, forming an insulation layer on the first sidewall and the second sidewall, forming an etch stop layer filling a portion of each gap between the active regions, forming a recess exposing the insulation layer formed on any one sidewall from among the first sidewall and the second sidewall, and forming a side contact exposing a portion of any one sidewall from among the first sidewall and the second sidewall by selectively removing a portion of the insulation layer.

Abstract: System for I-Q phase mismatch detection and correction. An apparatus to correct a phase mismatch between I and Q signals includes a correction circuit configured to continuously compare a reference signal and a phase error signal associated with the I and Q signals to generate an I bias signal and a Q bias signal, a first CMOS buffer configured to receive the I signal and the I bias signal and output a phase adjusted I signal based on the I bias signal, and a second CMOS buffer configured to receive the Q signal and the Q bias signal and output a phase adjusted Q signal based on the Q bias signal.

Abstract: A method for fabricating a semiconductor device includes etching a semiconductor substrate using a hard mask layer as a barrier to form a trench defining a plurality of active regions, forming a gap-fill layer to gap-fill a portion of the inside of the trench so that the hard mask layer becomes a protrusion, forming spacers covering both sides of the protrusion, removing one of the spacers using a doped etch barrier as an etch barrier, and etching the gap-fill layer using a remaining spacer as an etch barrier to form a side trench exposing one side of the active region.