Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: An apparatus and a method provide a four-dimensional effect to a driver and/or passengers of a vehicle. The apparatus includes a first vehicle controller that analyzes data of content played in an electronic device, sets four-dimensional effect information and generates vehicle control information for realizing the four-dimensional effect according to the set four-dimensional effect information, and a second vehicle controller that performs vehicle control based on the vehicle control information in consideration of a driving status of a vehicle.

Abstract: The present invention relates to a stereoscopic image display through which after the incident light incident from a projector lens is split into different lights according to polarized components, by selectively delaying the phase of each split light by a predetermined value through an on/off operation of an optical switch module, each light is converted to have the same polarized component, and the synthesized light obtained by synthesizing the lights having the same polarized component is projected on a screen so as to double the luminance on the screen.

Abstract: A semiconductor device includes a substrate, an active region disposed on the substrate and extending in a first direction, a device isolation layer adjacent to the active region, a gate structure disposed in the active region, the gate structure extending in a second direction crossing the first direction, and covering a portion of the device isolation layer, a gate separation pattern contacting an end of the gate structure, and an impurity region disposed below the gate separation pattern and on the device isolation layer.

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.

Abstract: A semiconductor device includes: a fin-type active area extending in a first direction protruding from a substrate; a plurality of nanosheet stacked structures; a blocking film covering a part of the upper surface and one sidewall of each of a pair of nanosheet stacked structures adjacent to both sides of the fin-type active area among the plurality of nanosheet stacked structures; a gate electrode extending in a second direction intersecting the first direction on the fin-type active area, the gate electrode including a real gate electrode surrounding the plurality of nanosheets and a dummy gate electrode disposed on the blocking film; and a gate dielectric layer between the real gate electrode and the plurality of nanosheets and between the dummy gate electrode and the blocking film.

Abstract: Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

Abstract: A touch screen device and a control method therefor is provided. The touch screen device includes: a touch screen which is mounted on a monitor for displaying an image input from a plurality of image interfaces, on divided screens through a divided screen synthesizer so as to receive an input touch state; a touch control unit for selecting a matching touch interface from among a plurality of touch interfaces on the basis of division information of divided screens with respect to touch coordinates input from the touch screen, and converting the touch coordinates into absolute coordinates for the matching touch interface; and a touch output unit for outputting absolute coordinates to a matching touch interface by the touch control unit.

Abstract: The present invention relates to a stereoscopic image display through which after the incident light incident from a projector lens is split into different lights according to polarized components, by selectively delaying the phase of each split light by a predetermined value through an on/off operation of an optical switch module, each light is converted to have the same polarized component, and the synthesized light obtained by synthesizing the lights having the same polarized component is projected on a screen so as to double the luminance on the screen.

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: A method for performing geomagnetic signal processing using a geomagnetic signal processing apparatus is provided. The method includes obtaining a geomagnetic signal based on a geomagnetic sensor output; converting the obtained geomagnetic signal into a high frequency signal having a frequency equal to or higher than a reference frequency using a signal processing filter; extracting abnormal high frequency signal values outside a predetermined critical range from the converted high frequency signal; determining whether a sum of the extracted abnormal high frequency signal values converges into a critical range a preset time window; and correcting the geomagnetic signal based on the determining.

Abstract: A multi-functional apparatus for testing and etching a substrate capable of increasing spatial efficiency and manufacturing efficiency by performing testing and etching operations in a same chamber body and a substrate processing apparatus including the same, the multi-functional apparatus including a chamber body having an entrance into which the substrate is injected in one of its sides and an exit from which the substrate is ejected in another one of its sides; a transfer unit disposed inside of the chamber body and for transferring the injected substrate in a direction from the entrance to the exit; a laser etching unit disposed on an upper portion of the transfer unit and for etching a part of the substrate disposed on the transfer unit; and a testing unit for testing the substrate disposed on the transfer unit.

Abstract: A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation layer, and a gate spacer structure covering a sidewall of the gate structure. A sidewall of the gate structure includes first, second, and third regions having first, second, and third slopes, respectively. The second slope increases from a bottom toward a top of the second region. The second slope has a value at the bottom of the second region less than the first slope. The third slope is greater than the second slope.

Abstract: Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

Abstract: A semiconductor device, including a first fin-type pattern; a first gate spacer on the first fin-type pattern, intersecting the first fin-type pattern, and including an upper portion and a lower portion; a second gate spacer on the first fin-type pattern, intersecting the first fin-type pattern, and being spaced apart from the first gate spacer; a first trench defined by the first gate spacer and the second gate spacer; a first gate electrode partially filling the first trench; a first capping pattern on the first gate electrode and filling the first trench; and an interlayer insulating layer covering an upper surface of the capping pattern, a width of the upper portion of the first gate spacer decreasing as a distance from an upper surface of the first fin-type pattern increases, and an outer sidewall of the upper portion of the first gate spacer contacting the interlayer insulating layer.

Abstract: A semiconductor device includes at least one nanowire that is disposed over a substrate, extends to be spaced apart from the substrate, and includes a channel region, a gate that surrounds at least a part of the channel region, and a gate dielectric film that is disposed between the channel region and the gate. A source/drain region that contacts one end of the at least one nanowire is formed in a semiconductor layer that extends from the substrate to the one end of the at least one nanowire. Insulating spacers are formed between the substrate and the at least one nanowire. The insulating spacers are disposed between the gate and the source/drain region and are formed of a material that is different from a material of the gate dielectric film.

Abstract: A method for performing geomagnetic signal processing using a geomagnetic signal processing apparatus is provided. The method includes obtaining a geomagnetic signal based on a geomagnetic sensor output; converting the obtained geomagnetic signal into a high frequency signal having a frequency equal to or higher than a reference frequency using a signal processing filter; extracting abnormal high frequency signal values outside a predetermined critical range from the converted high frequency signal; determining whether a sum of the extracted abnormal high frequency signal values converges into a critical range a preset time window; and correcting the geomagnetic signal based on the determining.

Abstract: Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.