Patents by Inventor Sang Won Park

Sang Won Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9502124
    Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.
    Type: Grant
    Filed: July 2, 2014
    Date of Patent: November 22, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Won Park, Dongkyo Shim, Kitae Park, Sang-Won Shim
  • Patent number: 9431062
    Abstract: A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: August 30, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Won Park, Kitae Park, Sang-Won Shim
  • Patent number: 9412456
    Abstract: Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.
    Type: Grant
    Filed: October 25, 2014
    Date of Patent: August 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: DongHun Kwak, Sang-Won Park, Won-Taeck Jung
  • Patent number: 9406547
    Abstract: Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: August 2, 2016
    Assignee: INTEL CORPORATION
    Inventors: Ritesh Jhaveri, Jeanne L. Luce, Sang-Won Park, Dennis G. Hanken
  • Publication number: 20160193606
    Abstract: A device and methods are provided for efficient and quick capture of target cells through a main microchannel having capture elements immobilized thereon and manipulating a velocity profile of a sample as it passes through the main microchannel. The cell capture device may have a main microchannel with a depth slightly larger than the diameter of the target cells and a plurality of side microchannels. The side microchannels may have a depth smaller than the diameter of the target cells. The device and methods may be used for early cancer detection.
    Type: Application
    Filed: March 10, 2016
    Publication date: July 7, 2016
    Applicant: Board of Supervisors of Louisiana State University and Agricultural and Mechanical College
    Inventors: Taehyun Park, Daniel Sang-Won Park, Sudheer D. Rani, Michael C. Murphy, Dimitris E. Nikitopoulos
  • Patent number: 9324440
    Abstract: The inventive concept relates to a nonvolatile memory device and methods for operating the same. The nonvolatile memory device comprises a plurality of strings arranged in rows and columns on a substrate, each string including at least one ground select transistor, a plurality of memory cells and at least one string select transistor sequentially stacked on the substrate. The method comprises erasing first memory cells corresponding to an erasure failed row and inhibiting erasure of second memory cells corresponding to an erasure passed row, and performing an erasure verification by a unit of each row with respect to the first memory cells.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: April 26, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Won Park, Dongku Kang, Jung-Yun Yun, Jinman Han, ChiWeon Yoon
  • Patent number: 9322047
    Abstract: A device and methods are provided for efficient and quick capture of target cells through a main microchannel having capture elements immobilized thereon and manipulating a velocity profile of a sample as it passes through the main microchannel. The cell capture device may have a main microchannel with a depth slightly larger than the diameter of the target cells and a plurality of side microchannels. The side microchannels may have a depth smaller than the diameter of the target cells. The device and methods may be used for early cancer detection.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: April 26, 2016
    Assignee: BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE
    Inventors: Taehyun Park, Daniel Sang-Won Park, Sudheer D Rani, Michael C Murphy, Dimitris E Nikitopoulos
  • Patent number: 9249210
    Abstract: Disclosed is an expression vector system for variants of coagulation Factor VIII (FVIII) and von Willebrand Factor (vWF). In detail, mutant vWF the size of which is significantly reduced by deleting exons but which has remarkably increased FVIII stabilizing and activating efficiency, and an expression vector system useful for the treatment of hemophilia which is capable of expressing the same along with FVIII are disclosed. Use of the mutant vWF with a reduced size enables effective expression of FVIII in a viral vector and significantly enhanced FVIII activity. Further, the viral vector may be effectively used to treat hemophilia through gene therapy.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: February 2, 2016
    Assignee: Korea University Industrial & Academic Collaborative Foundation
    Inventors: Sang Yun Choi, Sang Won Park
  • Patent number: 9110896
    Abstract: An active air flap apparatus for a vehicle may include a drive flap positional sensor connected with a drive shaft connecting an actuator and a drive flap and detecting a rotational angle of the drive flap, a driven flap pivotally connected with the drive flap through a link mechanism, a driven flap positional sensor connected with a driven shaft pivotally connected with the link member and detecting a rotational angle of the driven flap, and a controller determining whether the drive flap positional sensor, the driven flap positional sensor, a motor of the actuator, and the link member may be defective by monitoring a feedback voltage value of the drive flap positional sensor, a feedback voltage value of the driven flap positional sensor, and a current applied to the motor of the actuator.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: August 18, 2015
    Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORP., HYUNDAI MOBIS CO., LTD.
    Inventors: Phil Jung Jeong, In Cheol Kim, Yong Jin Jung, Sang Won Park
  • Publication number: 20150221351
    Abstract: A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.
    Type: Application
    Filed: December 11, 2014
    Publication date: August 6, 2015
    Inventors: SANG-WON PARK, KITAE PARK, SANG-WON SHIM
  • Publication number: 20150179501
    Abstract: Techniques are disclosed for providing trench isolation of semiconductive fins using flowable dielectric materials. In accordance with some embodiments, a flowable dielectric can be deposited over a fin-patterned semiconductive substrate, for example, using a flowable chemical vapor deposition (FCVD) process. The flowable dielectric may be flowed into the trenches between neighboring fins, where it can be cured in situ, thereby forming a dielectric layer over the substrate, in accordance with some embodiments. Through curing, the flowable dielectric can be converted, for example, to an oxide, a nitride, and/or a carbide, as desired for a given target application or end-use. In some embodiments, the resultant dielectric layer may be substantially defect-free, exhibiting no or an otherwise reduced quantity of seams/voids.
    Type: Application
    Filed: December 24, 2013
    Publication date: June 25, 2015
    Inventors: Ritesh Jhaveri, Jeanne L. Luce, Sang-Won Park, Dennis G. Hanken
  • Publication number: 20150168550
    Abstract: A method for driving ultrasonic sensors includes: transmitting a LIN communication message from an upper controller to ultrasonic sensors on a LIN network; receiving, by the ultrasonic sensors, the LIN communication message; confirming, by the ultrasonic sensors, a command of a protected identifier (PID) field of the LIN communication message; and if the command of the PID field is an object sensing command, measuring a distance from an object by allowing the ultrasonic sensors to directly emit an ultrasonic wave independent of values of the remaining fields of the LIN communication message.
    Type: Application
    Filed: October 20, 2014
    Publication date: June 18, 2015
    Inventors: Hyun Sang Kim, Sang Won Park
  • Publication number: 20150170749
    Abstract: The inventive concept relates to a nonvolatile memory device and methods for operating the same. The nonvolatile memory device comprises a plurality of strings arranged in rows and columns on a substrate, each string including at least one ground select transistor, a plurality of memory cells and at least one string select transistor sequentially stacked on the substrate. The method comprises erasing first memory cells corresponding to an erasure failed row and inhibiting erasure of second memory cells corresponding to an erasure passed row, and performing an erasure verification by a unit of each row with respect to the first memory cells.
    Type: Application
    Filed: February 25, 2015
    Publication date: June 18, 2015
    Inventors: Sang-Won PARK, Dongku KANG, Jung-Yun YUN, Jinman HAN, ChiWeon YOON
  • Publication number: 20150078095
    Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.
    Type: Application
    Filed: July 2, 2014
    Publication date: March 19, 2015
    Inventors: SANG-WON PARK, DONGKYO SHIM, KITAE PARK, SANG-WON SHIM
  • Publication number: 20150049548
    Abstract: Read methods for a non-volatile memory device are provided. The read method includes sensing memory cells in an Nth program state using original read voltages of an Nth level, where N is a natural number greater than 2, counting the number of memory cells in the Nth program state according to the sensing result, and when the number of memory cells in the Nth program state is greater than a reference number, sensing memory cells in first to Nth program states using adjusted read voltages of first to Nth levels. The adjusted read voltages are obtained by adding offset voltages to the original read voltages.
    Type: Application
    Filed: August 14, 2014
    Publication date: February 19, 2015
    Inventors: Sang-Won Park, Dong-Hun Kwak
  • Publication number: 20150043283
    Abstract: Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.
    Type: Application
    Filed: October 25, 2014
    Publication date: February 12, 2015
    Inventors: DongHun KWAK, Sang-Won PARK, Won-Taeck JUNG
  • Publication number: 20150005473
    Abstract: Disclosed is an expression vector system for variants of coagulation Factor VIII (FVIII) and von Willebrand Factor (vWF). In detail, mutant vWF the size of which is significantly reduced by deleting exons but which has remarkably increased FVIII stabilizing and activating efficiency, and an expression vector system useful for the treatment of hemophilia which is capable of expressing the same along with FVIII are disclosed. Use of the mutant vWF with a reduced size enables effective expression of FVIII in a viral vector and significantly enhanced FVIII activity. Further, the viral vector may be effectively used to treat hemophilia through gene therapy.
    Type: Application
    Filed: May 30, 2014
    Publication date: January 1, 2015
    Applicant: Korea University Industrial & Academic Collaborative Foundation
    Inventors: Sang Yun CHOI, Sang Won PARK
  • Patent number: 8902651
    Abstract: Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.
    Type: Grant
    Filed: October 10, 2012
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: DongHun Kwak, Sang-Won Park, Won-Taeck Jung
  • Patent number: 8820208
    Abstract: Provided is a mine detector detachably attached to the combat boot, which includes a main body detachably attached to the combat boot, and provided with a power supply, a signal transmitting part and a signal receiving part, and a detection part detachably attached to the combat boot, and provided with an antenna connected to the main body.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: September 2, 2014
    Assignee: Defense Agency for Technology and Quality
    Inventors: Ji Hoon Kim, Jae Yong Jee, Jin Chun Ju, Kun Sung Ryu, Yong Hwa Kim, Sang Won Park, Kang Wook Kim
  • Patent number: 8791247
    Abstract: Disclosed is an expression vector system for variants of coagulation factor VIII (FVIII) and von Willebrand factor (vWF). In detail, mutant vWF the size of which is significantly reduced by deleting exons but which has remarkably increased FVIII stabilizing and activating efficiency, and an expression vector system useful for the treatment of hemophilia which is capable of expressing the same along with FVIII are disclosed. Use of the mutant vWF with a reduced size enables effective expression of FVIII in a viral vector and significantly enhanced FVIII activity. Further, the viral vector may be effectively used to treat hemophilia through gene therapy.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: July 29, 2014
    Assignee: Korea University Industrial & Academic Collaboration Foundation
    Inventors: Sang Yun Choi, Sang Won Park