Patents by Inventor Sang Bin PARK

Sang Bin PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240097104
    Abstract: The technology and implementations disclosed in this patent document generally relate to a lithium secondary battery including: a first unit cell including a first anode including a 1-1 anode mixture layer and a 1-2 anode mixture layer on the 1-1 anode mixture layer, and a second unit cell including a second anode including a 2-1 anode mixture layer and a 2-2 anode mixture layer on the 2-1 anode mixture layer, wherein a weight ratio of the silicon-based active material in the 1-2 anode mixture layer is greater than a weight ratio of the silicon-based active material in the 1-1 anode mixture layer, and a weight ratio of the silicon-based active material in the 2-2 anode mixture layer is less than or equal to a weight ratio of the silicon-based active material in the 2-1 anode mixture layer.
    Type: Application
    Filed: August 2, 2023
    Publication date: March 21, 2024
    Inventors: Jun Hee HAN, Moon Sung KIM, Hyo Mi KIM, Sang Baek RYU, Da Hye PARK, Sang In BANG, Seung Hyun YOOK, Hwan Ho JANG, Da Bin CHUNG
  • Publication number: 20240085282
    Abstract: There is provide a method for manufacturing analytical semiconductor samples by using an apparatus for manufacturing analytical semiconductor samples, which minimizes a feedback time by manufacturing a viewing surface that is environment-friendly and has a large area. The method comprising mounting the analytical semiconductor samples to a holder; discharging deionized (DI) water to an upper surface of a polishing plate through a DI water nozzle; grinding the analytical semiconductor samples with the upper surface of the polishing plat; determining whether a desired viewing surface of the analytical semiconductor samples has been acquired after the grinding of the analytical semiconductor samples; and transferring the analytical semiconductor samples to analyze the viewing surface of the ground analytical semiconductor samples based on a determination that the desired viewing surface of the analytical semiconductor samples has been acquired.
    Type: Application
    Filed: August 23, 2023
    Publication date: March 14, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Min Chul JO, Sang Hyun PARK, Su Jin SHIN, Gil Ho GU, Dae Gon YU, So Yeon LEE, Yun Bin JEONG
  • Patent number: 11929495
    Abstract: In some implementations, the anode includes a current collector, a first anode mixture layer formed on at least one surface of the current collector, and a second anode mixture layer formed on the first anode mixture layer. The first anode mixture layer and the second anode mixture layer include a carbon-based active material, respectively. The first anode mixture layer includes a first binder, a first silicon-based active material, and a first conductive material. The second anode mixture layer includes a second binder, a second silicon-based active material, and a second conductive material. Contents of the first conductive material and the second conductive material are different from each other with respect to the total combined weight of the first anode mixture layer and the second anode mixture layer. Types of the first silicon-based active material and the second silicon-based active material are different from each other.
    Type: Grant
    Filed: May 18, 2023
    Date of Patent: March 12, 2024
    Assignee: SK ON CO., LTD.
    Inventors: Hyo Mi Kim, Moon Sung Kim, Sang Baek Ryu, Da Hye Park, Seung Hyun Yook, Hwan Ho Jang, Kwang Ho Jeong, Da Bin Chung, Jun Hee Han
  • Patent number: 11929491
    Abstract: An anode for a lithium secondary battery includes an anode current collector, and an anode active material layer formed on at least one surface of the anode current collector. The anode active material layer includes a carbon-based active material, a first silicon-based active material doped with magnesium and a second silicon-based active material not doped with magnesium. A content of the first silicon-based active material is in a range from 2 wt % to 20 wt % based on a total weight of the anode active material layer.
    Type: Grant
    Filed: June 6, 2023
    Date of Patent: March 12, 2024
    Assignee: SK ON CO., LTD.
    Inventors: Hwan Ho Jang, Moon Sung Kim, Hyo Mi Kim, Sang Baek Ryu, Da Hye Park, Seung Hyun Yook, Da Bin Chung, Jun Hee Han
  • Patent number: 10529397
    Abstract: Provided herein may be a memory chip, a package device having the memory chip, and a method of operating the package device. The memory chip comprising a plurality of memory blocks each including a plurality of memory cells for storing data; a plurality of input/output pads to which a chip address is inputted; and a plurality of peripheral circuits configured to program the chip address to a selected memory block among the memory blocks.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: January 7, 2020
    Assignee: SK hynix Inc.
    Inventors: Jin Yong Seong, Ho Jun Kang, Sang Bin Park
  • Publication number: 20190115052
    Abstract: Provided herein may be a memory chip, a package device having the memory chip, and a method of operating the package device. The memory chip comprising a plurality of memory blocks each including a plurality of memory cells for storing data; a plurality of input/output pads to which a chip address is inputted; and a plurality of peripheral circuits configured to program the chip address to a selected memory block among the memory blocks.
    Type: Application
    Filed: May 21, 2018
    Publication date: April 18, 2019
    Inventors: Jin Yong SEONG, Ho Jun KANG, Sang Bin PARK
  • Patent number: 10082961
    Abstract: A memory system includes a first control circuit part configured to communicate with a host through a first host channel, a second control circuit part configured to communicate with the host through a second host channel, a first chip group configured to communicate with the first control circuit part through a first internal channel, and a second chip group configured to communicate with the second control circuit part through a second internal channel, wherein the first control circuit part and the second control circuit part alternately receive a plurality of data inputted through one of the first and second host channels, which is selected during a single channel operation, and transmit the data to the first chip group and the second chip group.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: September 25, 2018
    Assignee: SK Hynix Inc.
    Inventor: Sang Bin Park
  • Publication number: 20160124640
    Abstract: A memory system includes a first control circuit part configured to communicate with a host through a first host channel, a second control circuit part configured to communicate with the host through a second host channel, a first chip group configured to communicate with the first control circuit part through a first internal channel, and a second chip group configured to communicate with the second control circuit part through a second internal channel, wherein the first control circuit part and the second control circuit part alternately receive a plurality of data inputted through one of the first and second host channels, which is selected during a single channel operation, and transmit the data to the first chip group and the second chip group.
    Type: Application
    Filed: March 13, 2015
    Publication date: May 5, 2016
    Inventor: Sang Bin PARK
  • Patent number: D833603
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: November 13, 2018
    Assignee: Samsung Bioepis Co., Ltd.
    Inventors: Jee Eun Yang, Sang Bin Park, Jae Min Song, Yong Kook Kim
  • Patent number: D834183
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: November 20, 2018
    Assignee: Samsung Bioepis Co., Ltd.
    Inventors: Jee Eun Yang, Sang Bin Park, Jae Min Song, Yong Kook Kim
  • Patent number: D855176
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: July 30, 2019
    Assignee: Samsung Bioepis Co., Ltd.
    Inventors: Jee Eun Yang, Sang Bin Park, Jae Min Song, Yong Kook Kim
  • Patent number: D864379
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: October 22, 2019
    Assignee: Samsung Bioepis Co., Ltd.
    Inventors: Jee Eun Yang, Sang Bin Park, Jae Min Song, Yong Kook Kim
  • Patent number: D867583
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: November 19, 2019
    Assignee: Samsung Bioepis Co., Ltd.
    Inventors: Jee Eun Yang, Sang Bin Park, Jae Min Song, Yong Kook Kim