Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes pre-treating a substrate by cleaning the substrate; etching the substrate by supplying an etchant and heating a substrate supplied with the etchant; and post-treating the substrate after the etching the substrate, and wherein the pre-treating the substrate, the etching the substrate, and the post-treating the substrate are each performed in different chambers, a substrate on which the pre-treating the substrate is completed is transferred in a dry state to a chamber at which the etching the substrate is performed, and a substrate on which the etching the substrate is completed is transferred in a wetted state with a liquid to a chamber at which the post-treating the substrate is performed.

Abstract: A display device including a pixel electrode, and a pixel circuit electrically connected to the pixel electrode. The pixel circuit includes a first transistor including sub-transistors electrically connected to each other through a first common node, a second transistor including sub-transistors electrically connected to each other through a second common node, a first electrode electrically connecting the first common node with the second common node, and a second electrode disposed to overlap the first electrode and electrically connected to a direct current power source.

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

Abstract: A display device includes a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area disposed in the peripheral area. A plurality of transistors is disposed in each pixel; a driving voltage line is disposed in the display area and transmits a driving voltage; a driving voltage transmission line is disposed in the peripheral area and is connected to the driving voltage line; and a conductive overlap layer overlaps at least one of the plurality of transistors.

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Abstract: A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

Abstract: A display device including: a display area including a plurality of pixels; and a peripheral area disposed around the display area to include a driving signal transmission line, each of the pixels may include a transistor, a driving voltage line connected to the transistor and the driving signal transmission line, and a light emitting unit connected to the transistor, the pixels may include a first pixel and a second pixel spaced apart from the driving signal transmission line to have different distances from each other, and a concentration of impurities doped in a semiconductor layer of the transistor of the first pixel may be different from a concentration of impurities doped in a semiconductor layer of the transistor of the second pixel.

Abstract: A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

Abstract: A display device includes: a substrate; a transistor disposed on the substrate; a first electrode connected to the transistor; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; a common voltage line connected to the second electrode; and a third electrode and a fourth electrode disposed between the common voltage line and the second electrode.

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

Abstract: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

Abstract: An exemplary embodiment of the present invention provides a display device including: a substrate including a display area including a plurality of pixels, a peripheral area around the display area, and a bending area that is disposed in the peripheral area and is bent or is able to be bent: a plurality of transistors disposed in the pixel; a driving voltage line that is disposed in the display, area and transmits a driving voltage; a driving voltage transmission line disposed in the peripheral area and connected to the driving voltage line; and an overlap layer that is conductive and overlaps at least one of the plurality of transistors in a plan view, wherein the overlap layer may be disposed in a layer between the substrate and the transistors, the overlap layer may include a first portion disposed in the display area and a second portion disposed in the peripheral area, the second portion may overlap the driving voltage transmission line in the plan view, the second portion may contact the driving voltage

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.