Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: The present invention relates to a composition for manufacturing artificial marble including a first preliminary composition and a second preliminary composition which include an acrylic-based monomer, an acrylic-based resin, a polymerization initiator, a crosslinking agent, a coloring agent, and a gelling agent and have a viscosity of 100,000 Ps to 5,000,000 Ps and/or a storage modulus of 100,000 Pa to 1,000,000 Pa. A viscosity of the second preliminary composition is higher than a viscosity of the first preliminary composition. Coloring agents of the first preliminary composition and the second preliminary composition have different colors. A weight ratio of the first preliminary composition to the second preliminary composition is in a range of 1:1 to 500:1.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A regulator circuit and a front-end module including the same may be disclosed. The regulator circuit may include a first output voltage generator and a second output voltage generator. The first output voltage generator may include a first resistor having a first end connected to power supplied from an outside, a first transistor connected between a second end of the first resistor and a ground terminal to supply a first voltage, and a second transistor receiving the first voltage through a control terminal and outputting a first output voltage through a first terminal. The second output voltage generator may be connected between the power and the first output voltage generator to output a second output voltage obtained by adding a predetermined voltage into the first output voltage.

Abstract: A regulator circuit and a front-end module including the same may be disclosed. The regulator circuit may include a first output voltage generator and a second output voltage generator. The first output voltage generator may include a first resistor having a first end connected to power supplied from an outside, a first transistor connected between a second end of the first resistor and a ground terminal to supply a first voltage, and a second transistor receiving the first voltage through a control terminal and outputting a first output voltage through a first terminal. The second output voltage generator may be connected between the power and the first output voltage generator to output a second output voltage obtained by adding a predetermined voltage into the first output voltage.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: The present invention relates to a composition for manufacturing artificial marble including a first preliminary composition and a second preliminary composition which include an acrylic-based monomer, an acrylic-based resin, a polymerization initiator, a crosslinking agent, a coloring agent, and a gelling agent and have a viscosity of 100,000 Ps to 5,000,000 Ps and/or a storage modulus of 100,000 Pa to 1,000,000 Pa. A viscosity of the second preliminary composition is higher than a viscosity of the first preliminary composition. Coloring agents of the first preliminary composition and the second preliminary composition have different colors. A weight ratio of the first preliminary composition to the second preliminary composition is in a range of 1:1 to 500:1.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.

Abstract: An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

Abstract: A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.