Abstract: A method of calculating a gamma-value for a display panel includes displaying a first color test image having a first target gray-level and then measuring a first luminance-value implemented by at least one first color-pixel included in a jth display-area, displaying a second color test image having the first target gray-level and then measuring a second luminance-value implemented by at least one second color-pixel included in the jth display-area, deriving an estimated driving current flowing in the second color-pixel at the first target gray-level based on RGB gray level-driving current curves, deriving a second target gray-level when the estimated driving current flows in the first color-pixel based on the RGB gray level-driving current curves, and calculating a target gamma-value to be applied to the first color-pixel included in the jth display-area based on the first target gray-level, the second target gray-level, the first luminance-value, and the second luminance-value.

Abstract: A multilayer capacitor includes a body including a dielectric layer and a plurality of internal electrodes stacked on each other with the dielectric layer interposed therebetween; and external electrodes disposed externally on the body, and respectively including a first layer connected to the internal electrode and a second layer covering the first layer, wherein the first layer includes a metal particle including an element A, an oxide of an element Z, formed on the metal particle, and an A-Z intermetallic compound phase, and here, the element Z has a higher ionization tendency than the element A.

Abstract: There is provided a semiconductor device including an active pattern which includes a lower pattern extending in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern being in contact with the protruding pattern on the protruding pattern, a first gate structure and a second gate structure which are disposed on the lower pattern and spaced apart from each other in the first direction, and a source/drain pattern which is disposed on the lower pattern and in contact with the sheet pattern, wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.

Abstract: A semiconductor device includes a lower pattern extending in a first direction, a first blocking structure which is on the lower pattern and includes at least one first blocking film comprising an oxygen-doped crystalline silicon film, a source/drain pattern on the first blocking structure, and a gate structure which extends in a second direction on the lower pattern and includes a gate electrode and a gate insulating film. Related fabrication methods are also discussed.

Abstract: A semiconductor device includes a lower pattern extending in a first direction, and protruding from a substrate in a second direction, a lower insulating pattern on the lower pattern, and in contact with an upper surface of the lower pattern, a channel pattern on the lower insulating pattern, a plurality of gate structures on the lower pattern and spaced apart from each other in the first direction, wherein each of the plurality of gate structures includes a gate electrode and a gate insulating film, and a source/drain pattern disposed on the lower pattern, and connected to the channel pattern. A vertical level of a lowermost portion of the source/drain pattern is lower than a vertical level of a bottom surface of the lower insulating pattern. The gate electrode overlaps the lower insulating pattern in the second direction.

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

Abstract: The present invention relates to a pharmaceutical composition for preventing and treating cell proliferative diseases comprising a feather of birds and a scale of fish, a scale transformed from the dermis, a degenerated or cornified variant of a scale, or a scale or horny scale of reptiles as an active ingredient. More particularly, the present invention relates to a pharmaceutical composition for preventing and treating cell proliferative diseases comprising a mixture of 70˜85 weight % of a feather of birds and 15˜30 weight % of a scale of fish, a scale transformed from the dermis, a degenerated or cornified variant of a scale, or a scale or horny scale of reptiles as an active ingredient. The inventive composition has the effect of inhibiting and preventing growth of cancer cells. Accordingly, the inventive composition may be used for anticancer purposes to prevent, ameliorate or treat cancer.

Abstract: A multilayer capacitor includes a body including a dielectric layer and a plurality of internal electrodes stacked on each other interposing the dielectric layer therebetween, and external electrodes disposed externally on the body, respectively including a first layer connected to the internal electrode and a second layer covering the first layer, wherein the first layer includes a metal particle including an element A and a Z-A-O phase formed in the metal particle, and here, the element Z is an alkali metal.

Abstract: A multilayer capacitor includes a body including a dielectric layer and a plurality of internal electrodes stacked on each other with the dielectric layer interposed therebetween; and external electrodes disposed externally on the body, and respectively including a first layer connected to the internal electrode and a second layer covering the first layer, wherein the first layer includes a metal particle including an element A, an oxide of an element Z, formed on the metal particle, and an A-Z intermetallic compound phase, and here, the element Z has a higher ionization tendency than the element A.

Abstract: An electronic component includes a body including a plurality of dielectric layers, and a plurality of internal electrodes disposed with a corresponding one of the dielectric layers interposed therebetween; and an external electrode disposed on the body and connected to at least one of the plurality of internal electrodes. One of the plurality of internal electrodes includes an alloy metal including nickel, tin and aluminum. One of the plurality of internal electrodes includes a core internal electrode including a first surface and a second surface opposing each other, and a capping internal electrode disposed on the first surface of the core internal electrode and the second surface of the core internal electrode. The capping internal electrode includes a first alloy region including an alloy of nickel and aluminum.

Abstract: An electronic component includes a body including a plurality of stacked dielectric layers and internal electrodes disposed with a corresponding dielectric layer interposed therebetween, and external electrodes disposed on the body and connected to corresponding internal electrodes. One of the internal electrodes includes a particle including Ni and Sn and a graphene layer disposed at a boundary of the particle. A ratio of an Sn content to a total content of Ni and Sn is Sn/(Ni+Sn), Sn/(Ni+Sn) of a first region located inside the particle at a first distance from a boundary between the particle and the graphene layer is A1, Sn/(Ni+Sn) of a second region located inside the particle at a second distance from a boundary between the particle and the graphene layer is A2, the second distance is smaller than the first distance, and A1 is smaller than A2.

Abstract: A semiconductor device comprises an active pattern on a substrate; a plurality of nanosheets spaced apart from each other; a gate electrode surrounding each of the nanosheets; a field insulating layer surrounding side walls of the active pattern; an interlayer insulating layer on the field insulating layer; a source/drain region comprising a first doping layer on the active pattern, a second doping layer on the first doping layer, and a capping layer forming side walls adjacent to the interlayer insulating layer; a source/drain contact electrically connected to, and on, the source/drain region, and a silicide layer between the source/drain region and the source/drain contact which contacts contact with the second doping layer and extends to an upper surface of the source/drain region. The capping layer extends from an upper surface of the field insulating layer to the upper surface of the source/drain region along side walls of the silicide layer.

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

Abstract: According to an embodiment of the present inventive concept, an electrolyte additive represented by the compounds of Chemical Formulas 1 to 4 may be provided. In addition, according to another embodiment of the present inventive concept, a method for preparing an electrolyte additive of the compounds of Chemical Formulas 1 to 4 may be provided, wherein the method for preparing the electrolyte additive includes reacting hexafluorophosphate and 2-monofluoromalonic acid, further adding an HF scavenger to the mixed solution produced by the reaction, and concentrating and drying the reaction solution obtained therefrom.

Abstract: The present invention relates to a micro-bubble pump apparatus for a water treatment, and the micro-bubble pump apparatus for a water treatment comprises: a motor for generating rotatory power; and a micro-bubble pump connected to the motor and for mixing a feed liquid which flows into one side thereof and a feed gas which is injected into the other side thereof.

Abstract: An electronic component includes a plurality of dielectric layers; and a plurality of first internal electrodes and a plurality of second internal electrodes alternately disposed with a corresponding dielectric layer interposed therebetween. One of the plurality of first internal electrodes includes a metal layer containing Ni and Sn, a first graphene layer disposed on a lower surface of the metal layer, and a second graphene layer disposed on an upper surface of the metal layer.

Abstract: An electronic component includes a body including a plurality of stacked dielectric layers and internal electrodes disposed with a corresponding dielectric layer interposed therebetween, and external electrodes disposed on the body and connected to corresponding internal electrodes. One of the internal electrodes includes a particle including Ni and Sn and a graphene layer disposed at a boundary of the particle. A ratio of an Sn content to a total content of Ni and Sn is Sn/(Ni+Sn), Sn/(Ni+Sn) of a first region located inside the particle at a first distance from a boundary between the particle and the graphene layer is A1, Sn/(Ni+Sn) of a second region located inside the particle at a second distance from a boundary between the particle and the graphene layer is A2, the second distance is smaller than the first distance, and A1 is smaller than A2.

Abstract: An electronic component includes a body including a plurality of dielectric layers, and a plurality of internal electrodes disposed with a corresponding one of the dielectric layers interposed therebetween; and an external electrode disposed on the body and connected to at least one of the plurality of internal electrodes. One of the plurality of internal electrodes includes an alloy metal including nickel, tin and aluminum. One of the plurality of internal electrodes includes a core internal electrode including a first surface and a second surface opposing each other, and a capping internal electrode disposed on the first surface of the core internal electrode and the second surface of the core internal electrode. The capping internal electrode includes a first alloy region including an alloy of nickel and aluminum.

Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

Abstract: An electric height control device may include: an oil storage part configured to store oil therein; a motor driving part inserted into the oil storage part and driven when power is applied thereto; a hydraulic block part coupled to the motor driving part, connected to the oil storage part, and configured to amplify oil; and a control part coupled to the hydraulic block part, and configured to control the motor driving part and the hydraulic block part.