Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, it is possible to produce an organic electroluminescent device having improved driving voltage, power efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: Electronic device includes first wireless communication interface; second wireless communication interface; and controller.

Abstract: An electric compressor capable of reducing a size and lightening weight of a package of an inverter unit, as a common mode choke (CM choke) is disposed radially outside of a circuit board of the inverter unit, and a high voltage connector, a CM choke, and a low voltage connector are integrated into a support body.

Abstract: An encryption key management method includes: receiving a data registration request from a supplier terminal, determining a data identifier associated with the content data, encrypting a master key with a public key of the supplier terminal, and providing the supplier terminal with the master key encrypted with the public key of the supplier terminal, the data identifier, and a key update count value; receiving a subscription application related to the data identifier from a first subscriber terminal, encrypting the master key with a public key of the first subscriber terminal, and providing the first subscriber terminal with the master key encrypted with the public key of the first subscriber terminal and the key update count value; receiving encrypted content data encrypted with the symmetric key and a hash for the content data from the supplier terminal; and transmitting the encrypted content data and the hash to the first subscriber terminal.

Abstract: The present invention provides an aluminum-iron-plated steel sheet, having excellent mold wear resistance, for hot press forming, and a manufacturing method thereof.

Abstract: A three-dimensional semiconductor device may comprise a first cell region, a second cell region, and a via plug region disposed between the first cell region and the second cell region; a word line stack disposed in the first cell region, the via plug region, and the second cell region, the word line stack including a plurality of word lines and a plurality of interlayer insulating layers which are alternately stacked; and a plurality of via plugs exclusively connected to the plurality of the word lines, respectively, by vertically penetrating through the word line stack in the via plug region. The via plugs may have an arrangement of a zigzag pattern in a row direction from a top view. The diameters of the via plugs may increase in the row direction.

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.

Abstract: A Merkle tree-based data management method may comprise: aligning data into two-dimensional square matrix; calculating a hash value of each node of the two-dimensional square matrix; calculating hash values of each row of the two-dimensional square matrix; generating an additional column with nodes having the hash values of each row; calculating hash values of each column of the two-dimensional square matrix; generating an additional row with nodes having hash values of each column; and calculating a Merkle root by concatenating the hash values of the additional column and the hash values of the additional row.

Abstract: The present invention relates to an apparatus and a method for predicting the dispersion of hazardous and noxious substances and, more specifically, provides an apparatus and a method for predicting the dispersion of hazardous and noxious substances, the method: checking the components of the hazardous and noxious substances having leaked into the ocean, so as to classify the hazardous and noxious substances into a corresponding classification set among twelve classification sets by means of at least one of vapor pressure, the degradation in water, or density; dividing the classification sets, in which the hazardous and noxious substances are classified, into one dispersion model among an air dispersion model, a seawater dispersion model, and an air/seawater dispersion model according to the dispersion characteristics thereof; acquiring, from a weather center server, the state information of a sea area, which is set to be different according to the divided dispersion models; and predicting a danger radius for

Abstract: The present invention relates to an ecotoxicity evaluation analysis device installed with a microalgae image analysis program therein for analyzing the microalgae 1 and evaluating and analyzing ecotoxicity, the device comprising: a complementary metal oxide semiconductor unit 10 having an arranging part 15 on the top for positioning the microalgae 1 and installed with a microalgae image analysis program therein for photographing a microscopic image and a shadow image of the microalgae 1 and analyzing the images; and a light emitting diode unit 20 for irradiating a light source to the microalgae 1 located in the arranging part 15 of the complementary metal oxide semiconductor unit 10.

Abstract: The present invention relates to an ecotoxicity evaluation analysis device installed with a microalgae image analysis program therein for analyzing the microalgae 1 and evaluating and analyzing ecotoxicity, the device comprising: a complementary metal oxide semiconductor unit 10 having an arranging part 15 on the top for positioning the microalgae 1 and installed with a microalgae image analysis program therein for photographing a microscopic image and a shadow image of the microalgae 1 and analyzing the images; and a light emitting diode unit 20 for irradiating a light source to the microalgae 1 located in the arranging part 15 of the complementary metal oxide semiconductor unit 10.

Abstract: The present invention relates to an optical analysis device using a multi-light source structure, which allows acquisition of an optimized measurement result by adjusting the number of light sources depending on a concentration of an object to be measured, such as ocean spilled oil, etc., and a method therefor.

Abstract: The present invention relates to an optical analysis device using a multi-light source structure, which allows acquisition of an optimized measurement result by adjusting the number of light sources depending on a concentration of an object to be measured, such as ocean spilled oil, etc., and a method therefor.

Abstract: The present invention relates to an apparatus and a method for predicting the dispersion of hazardous and noxious substances and, more specifically, provides an apparatus and a method for predicting the dispersion of hazardous and noxious substances, the method: checking the components of the hazardous and noxious substances having leaked into the ocean, so as to classify the hazardous and noxious substances into a corresponding classification set among twelve classification sets by means of at least one of vapor pressure, the degradation in water, or density; dividing the classification sets, in which the hazardous and noxious substances are classified, into one dispersion model among an air dispersion model, a seawater dispersion model, and an air/seawater dispersion model according to the dispersion characteristics thereof; acquiring, from a weather center server, the state information of a sea area, which is set to be different according to the divided dispersion models; and predicting a danger radius for

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.