Abstract: This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.

Abstract: This disclosure relates to a photosensitive composition that includes at least one fully imidized polyimide polymer having a weight average molecular weight in the range of about 20,000 Daltons to about 70,000 Daltons; at least one solubility switching compound; at least one photoinitiator; and at least one solvent. The composition is capable of forming a film or a dry film having a dissolution rate of greater than about 0.15 micron/second using cyclopentanone as a developer.

Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted linear alkenyl group and a substituted or unsubstituted linear alkynyl group. Each variable in the above formulas is defined in the specification.

Abstract: This disclosure relates to a process of purifying a polymer. The process includes (a) providing an organic solution containing a polyimide or polyamic ester in at least one polar, aprotic polymerization solvent; (b) adding at least one purification solvent to the organic solution to form a diluted organic solution, the at least one purification solvent is less polar than the at least one polymerization solvent and has a lower water solubility than the at least one polymerization solvent at 25° C.; (c) washing the diluted organic solution with water or an aqueous solution to obtain a washed organic solution; and (d) removing at least a portion of the at least one purification solvent in the washed organic solution to obtain a solution containing a purified polyimide or polyamic ester. This disclosure also relates to a process of preparing a film on a semiconductor substrate, as well as related purified polymer solutions, films, and articles.

Abstract: This disclosure relates to a polymer that includes a first repeat unit and at least one end-cap group at one end of the polymer. The first repeat unit includes at least one imide moiety and at least one indane-containing moiety. The end-cap group is capable of undergoing a cycloreversion reaction. This disclosure also relates to a thermosetting composition containing the above polymer.

Abstract: An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.

Abstract: A synthesis process for polyhedral oligomeric silsesquioxanes that produces in high yield a low resin content, solvent free, and trace metal free monomer suitable for use in microelectronic applications. POSS silanols are reacted with a silane coupling agent in the presence of a solvent and a superbase.

Abstract: An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.

Abstract: Thermally curable undercoat composition comprising for producing a bilayer relief image comprising: a) a polymer of Structure I comprising repeating units of Structure II, III, and IV b) a phenolic crosslinker; c) a thermal acid generator (TAG); and d) a solvent.

Abstract: A photosensitve composition exhibiting high resolution and enhanced, tunable O2 plasma etch resistance comprising a silicon-containing base polymer, a silicon-containing additive, a photoacid generator and solvent is provided. A method of forming a patterned resist film is also provided.

Abstract: Manufacturing semiconductor device by steps of: a) providing substrate with antireflective coating or underlayer, b) applying first photosensitive composition over substrate, c) exposing first composition to radiation to produce first pattern, d) developing exposed first composition to produce an imaged bilayer stack, e) rinsing the stack, f) applying fixer to the stack, g) applying optional bake, h) rinsing the stack, i) applying second optional bake, j) applying second photosensitive composition onto the stack to produce multilayer stack, k) exposing second composition to produce second pattern offset from first pattern, l) developing exposed second composition to produce multilayer stack, and m) rinsing multilayer stack; the photosensitive compositions have photoacid generator and substantially aqueous base insoluble polymer whose solubility increases upon treatment with acid and further comprises an anchor group, and the fixer is a polyfunctional compound reactive with anchor group, but does not conta

Abstract: A synthesis process for polyhedral oligomeric silsesquioxanes that produces in high yield a low resin content, solvent free, and trace metal free monomer suitable for use in microelectronic applications. POSS silanols are reacted with a silane coupling agent in the presence of a solvent and a superbase.

Abstract: Thermally curable undercoat composition comprising for producing a bilayer relief image comprising: a) a polymer of Structure I comprising repeating units of Structure II, III, and IV b) a phenolic crosslinker; c) a thermal acid generator (TAG); and d) a solvent.

Abstract: Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.

Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep U V. particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

Abstract: A polymer comprises an acetal-containing monomer unit having the general structure I and at least one of the fluorine-containing monomer units having the general structures II and III: wherein R1, R4, R5 and R6 are each independently H, lower alkyl, CH2CO2R10, cyano, CH2CN, or halogen, wherein R10 is any alkyl, cycloalkyl, aryl, arylalkyl, alkylenecycloalkyl, silyl or siloxy or linear or cyclic polysiloxane group; R2 is CHR11R12 where R11 and R12 are each independently H, lower alkyl, cycloalkyl or aryl; A is a substituted or unsubstituted alkylene, cycloalkylene, alkylenecycloalkylene, or alkylenearylene; and R3 is linear, branched or cyclic fluoroalkyl group or SiR13R14R15 where R13, R14, and R15 are each independently alkyl, cycloalkyl, aryl, arylalkyl, alkylenecycloalkyl, silyl, siloxy, linear or cyclic polysiloxane or silsesquioxane alkyl group; B is an aryl, C(═O)—O—(CH2)x where x=0-4, lower alkyl, cycloalkyl, alkene cycloalkyl, silyl, siloxyl, or linear or cycl

Abstract: A synthetic process comprising the following steps: providing a reaction mixture comprising: an ethylenically unsaturated anhydride monomer, at least one ethylenically unsaturated non-anhydride monomer, a free radical initiator, and an alkyl substituted THF solvent having the general structure of formula 1: where R1, R2, R3, and R4 are independently chosen from the group hydrogen and C1-C4 linear or branched alkyl with the proviso that at least one of R1, R2, R3, and R4 is not H; polymerizing the reaction mixture; and removing, by distillation, unreacted monomers, the alkyl substituted THF solvent, and any low boiling volatile reaction products.

Abstract: A photoresist composition comprising at least one acetal polymer having a silicon substituent; provided that the silicon substituent is not directly attached to the acetal functionality, thereby providing high resolution, improved DOF, and improved dimensional stability under metrology conditions.

Abstract: Novel copolymers suitable for forming the top layer photoimagable coating in a deep UV, particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.

Abstract: A polymer comprises an acetal-containing monomer unit having the general structure I and at least one of the fluorine-containing monomer units having the general structures II and III: 1