Abstract: Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

Abstract: Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

Abstract: Cooling flanges and semiconductor manufacturing processing chamber comprising the cooling flanges are disclosed. The cooling flanges comprise a flange body with a gas channel extending through the length thereof. The gas channel has an inlet funnel, a middle channel and an outlet funnel with a purge gas inlet in a side of the flange body. The purge gas inlet connects to the middle channel of the gas channel.

Abstract: Process chamber lids, processing chambers and methods using the lids are described. In some embodiments, the lid includes a showerhead with a plurality of heater segments in a peripheral region thereof. The heated showerhead minimizes temperature non-uniformity and/or minimizes heat less near the peripheral edge of a processed wafer.

Abstract: Semiconductor manufacturing processing chambers having an RF isolator between the support ring and the showerhead and/or an RF gasket between the showerhead and the gas funnel are described. A cap insert with a cap housing around the cap insert is on the gas funnel and an RF feed is in contact with the showerhead. A substrate support can be included and may have an RF return path directed through the substrate support.

Abstract: Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Abstract: Sealing bodies comprising a first body having a top surface and a bottom surface defining a thickness thereof. An inlet conduit and an outlet conduit are in fluid communication with one or more of the top surface, the bottom surface, or a top channel formed in the top surface or a bottom channel formed in the bottom surface.

Abstract: Embodiments of the present disclosure are related to directed to a pressure seal for a process chamber. The pressure seal comprises a bottom portion, a compressible middle portion on the bottom portion, and a top portion on the compressible middle portion. The disclosed pressure seal is configured to reduce pumping time of a process region in an interior volume of a processing chamber compared to a process chamber that does not include a pressure seal. Processing chambers including the disclosed pressure seal are configured to process a semiconductor substrate at high temperatures, such as a temperature of greater than or equal to 350° C. Methods of sealing a processing chamber using the disclosed pressure seal are also described.

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

Abstract: Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

Abstract: Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Abstract: Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

Abstract: Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

Abstract: Apparatus and methods for improving deposition uniformity in a cross-flow processing chamber are described. A precursor inlet is configured to allow a cross-flow of precursor from the precursor inlet side of the lid to an exhaust side of the lid opposite a center of the lid from the precursor inlet side. At least one purge gas inlet is in fluid communication with a purge gas channel, the purge gas channel having at least one opening aligned to provide a flow of gas to a center of a substrate in the cross-flow process chamber.

Abstract: Gas distribution assemblies comprising a backing plate, a first enclosure with an outer diameter smaller than an outer diameter of an opening in the center of the backing plate. A top plate is connected to the top of the first enclosure. A compressible seal surrounds the first enclosure connecting the top plate to the backing plate outside the opening in the backing plate. An actuator is connected to the backing plate and the top plate to move the top plate closer to and further from the backing plate. A plunger extends through the opening in the center of the first enclosure. Methods of controlling a flow profile are also disclosed.

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

Abstract: Process chambers and methods for leveling a motor shaft and substrate support plane are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A first plurality of sensors is arranged at about the same radial distance from the rotational axis and at different angular positions relative to the rotational axis and a second plurality of sensors are arranged to measure the support plane. An angle-dependent motor leveling profile is determined and shim values for the motor bolts are determined to level the motor shaft. The support plane is measured using the second plurality of sensors to level the support plane perpendicular to the motor shaft.

Abstract: Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers having a wafer cassette comprising a plurality of platforms, each platform configured to support at least one wafer for processing, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette. In some embodiments, the plurality of platforms have a first set of electrodes having a first polarity and a second set of electrodes having a second polarity, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette.