Patents by Inventor Sanka Ganesan

Sanka Ganesan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210082826
    Abstract: Semiconductor packages and package assemblies having active dies and external die mounts on a silicon wafer, and methods of fabricating such semiconductor packages and package assemblies, are described. In an example, a semiconductor package assembly includes a semiconductor package having an active die attached to a silicon wafer by a first solder bump. A second solder bump is on the silicon wafer laterally outward from the active die to provide a mount for an external die. An epoxy layer may surround the active die and cover the silicon wafer. A hole may extend through the epoxy layer above the second solder bump to expose the second solder bump through the hole. Accordingly, an external memory die can be connected directly to the second solder bump on the silicon wafer through the hole.
    Type: Application
    Filed: November 24, 2020
    Publication date: March 18, 2021
    Inventors: Vipul Vijay MEHTA, Eric Jin LI, Sanka GANESAN, Debendra MALLIK, Robert Leon SANKMAN
  • Publication number: 20210043570
    Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge with a hybrid layer on a high-density packaging (HDP) substrate, a plurality of dies over the bridge and the HDP substrate, and a plurality of through mold vias (TMVs) on the HDP substrate. The bridge is coupled between the dies and the HDP substrate. The bridge is directly coupled to two dies of the dies with the hybrid layer, where a top surface of the hybrid layer of the bridge is directly on bottom surfaces of the dies, and where a bottom surface of the bridge is directly on a top surface of the HDP substrate. The TMVs couple the HDP substrate to the dies, and have a thickness that is substantially equal to a thickness of the bridge. The hybrid layer includes conductive pads, surface finish, and/or dielectric.
    Type: Application
    Filed: August 7, 2019
    Publication date: February 11, 2021
    Inventors: Sanka GANESAN, Kevin MCCARTHY, Leigh M. TRIBOLET, Debendra MALLIK, Ravindranath V. MAHAJAN, Robert L. SANKMAN
  • Publication number: 20210035911
    Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).
    Type: Application
    Filed: July 29, 2019
    Publication date: February 4, 2021
    Inventors: Sanka GANESAN, Kevin MCCARTHY, Leigh M. TRIBOLET, Debendra MALLIK, Ravindranath V. MAHAJAN, Robert L. SANKMAN
  • Patent number: 10910317
    Abstract: Semiconductor packages and package assemblies having active dies and external die mounts on a silicon wafer, and methods of fabricating such semiconductor packages and package assemblies, are described. In an example, a semiconductor package assembly includes a semiconductor package having an active die attached to a silicon wafer by a first solder bump. A second solder bump is on the silicon wafer laterally outward from the active die to provide a mount for an external die. An epoxy layer may surround the active die and cover the silicon wafer. A hole may extend through the epoxy layer above the second solder bump to expose the second solder bump through the hole. Accordingly, an external memory die can be connected directly to the second solder bump on the silicon wafer through the hole.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: February 2, 2021
    Assignee: Intel Corporation
    Inventors: Vipul Vijay Mehta, Eric Jin Li, Sanka Ganesan, Debendra Mallik, Robert Leon Sankman
  • Publication number: 20210028116
    Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, wherein the package substrate comprises a first routing architecture. In an embodiment, the electronic package further comprises a first die on the package substrate, a second die on the package substrate, wherein the first die is electrically coupled to the second die by a bridge embedded in the package substrate, and a routing patch on the package substrate. In an embodiment, the routing patch is electrically coupled to the second die, and wherein the routing patch comprises a second routing architecture that is different than the first routing architecture.
    Type: Application
    Filed: July 24, 2019
    Publication date: January 28, 2021
    Inventors: Sanka GANESAN, Robert L. SANKMAN, Arghya SAIN, Sri Chaitra Jyotsna CHAVALI, Lijiang WANG, Cemil GEYIK
  • Patent number: 10903166
    Abstract: Disclosed herein are integrated circuit (IC) packages, and related structures and techniques. In some embodiments, an IC package may include: a die; a redistribution structure, wherein the die is coupled to the redistribution structure via first-level interconnects and solder; a solder resist; and second-level interconnects coupled to the redistribution structure through openings in the solder resist.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: January 26, 2021
    Assignee: Intel IP Corporation
    Inventors: Sanka Ganesan, Thorsten Meyer, Gerald Ofner
  • Publication number: 20210013188
    Abstract: Systems and methods for providing a low profile stacked die semiconductor package in which a first semiconductor package is stacked with a second semiconductor package and both semiconductor packages are conductively coupled to an active silicon substrate that communicably couples the first semiconductor package to the second semiconductor package. The first semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a first interconnect pattern having a first interconnect pitch. The second semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a second interconnect pattern having a second pitch that is greater than the first pitch. The second semiconductor package may be stacked on the first semiconductor package and conductively coupled to the active silicon substrate using a plurality of conductive members or a plurality of wirebonds.
    Type: Application
    Filed: September 28, 2017
    Publication date: January 14, 2021
    Applicant: Intel Corporation
    Inventors: Wilfred Gomes, Sanka Ganesan, DOUG INGERLY, ROBERT SANKMAN, MARK BOHR, DEBENDRA MALLIK
  • Patent number: 10784204
    Abstract: Integrated circuit (IC) chip die to die channel interconnect configurations (systems and methods for their manufacture) may improve signaling to and through a single ended bus data signal communication channel by including on-die induction structures; on-die interconnect features; on-package first level die bump designs and ground webbing structures; on-package high speed horizontal data signal transmission lines; on-package vertical data signal transmission interconnects; and/or on-package electro-optical (EO) connectors in various die to die interconnect configurations for improved signal connections and transmission through a data signal channel extending through one or more semiconductor device package devices, that may include an electro-optical (EO) connector upon which at least one package device may be mounted, and/or be semiconductor device packages in a package-on-package configuration.
    Type: Grant
    Filed: July 2, 2016
    Date of Patent: September 22, 2020
    Assignee: Intel Corporation
    Inventors: Kemal Aygun, Richard J. Dischler, Jeff C. Morriss, Zhiguo Qian, Wilfred Gomes, Yu Amos Zhang, Ram S. Viswanath, Rajasekaran Swaminathan, Sriram Srinivasan, Yidnekachew S. Mekonnen, Sanka Ganesan, Eduard Roytman, Mathew J. Manusharow
  • Publication number: 20200273811
    Abstract: IC package including a material preform comprising graphite. The material preform may have a thermal conductivity higher than that of other materials in the package and may therefore mitigate the formation of hot spots within an IC die during device operation. The preform may have high electrical conductivity suitable for EMI shielding. The preform may comprise a graphite sheet that can be adhered to a package assembly with an electrically conductive adhesive, applied, for example over an IC die surface and a surrounding package dielectric material. Electrical interconnects of the package may be coupled to the graphite sheet as an EMI shield. The package preform may be grounded to a reference potential through electrical interconnects of the package, which may be further coupled to a system-level ground plane. System-level thermal solutions may interface with the package-level graphite sheet.
    Type: Application
    Filed: February 27, 2019
    Publication date: August 27, 2020
    Applicant: Intel Corporation
    Inventors: Debendra Mallik, Mitul Modi, Sanka Ganesan, Edvin Cetegen, Omkar Karhade, Ravindranath Mahajan, James C. Matayabas, Jr., Jan Krajniak, Kumar Singh, Aastha Uppal
  • Publication number: 20200273784
    Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.
    Type: Application
    Filed: December 30, 2017
    Publication date: August 27, 2020
    Inventors: Debendra MALLIK, Robert L. SANKMAN, Robert NICKERSON, Mitul MODI, Sanka GANESAN, Rajasekaran SWAMINATHAN, Omkar KARHADE, Shawna M. LIFF, Amruthavalli ALUR, Sri Chaitra J. CHAVALI
  • Publication number: 20200273768
    Abstract: IC packages including a heat spreading material comprising crystalline carbon. The heat spreading material may be applied directly to an IC die surface, for example at a die prep stage, prior to an application or build-up of packaging material, so that the high thermal conductivity may best mitigate any hot spots that develop at the IC die surface during operation. The heat spreading material may be applied to surface of the IC die.
    Type: Application
    Filed: February 27, 2019
    Publication date: August 27, 2020
    Applicant: Intel Corporation
    Inventors: Omkar Karhade, Nitin Deshpande, Mitul Modi, Edvin Cetegen, Aastha Uppal, Debendra Mallik, Sanka Ganesan, Yiqun Bai, Jan Krajniak, Kumar Singh
  • Publication number: 20200273772
    Abstract: An apparatus is provided which comprises: a package substrate, an integrated circuit device coupled to a surface of the package substrate, a first material on the surface of the package substrate, the first material contacting one or more lateral sides of the integrated circuit device, the first material extending at least to a surface of the integrated circuit device opposite the package substrate, two or more separate fins over a surface of the integrated circuit device, the two or more fins comprising a second material having a different composition than the first material, and a third material having a different composition than the second material, the third material over the surface of the integrated circuit device and between the two or more fins. Other embodiments are also disclosed and claimed.
    Type: Application
    Filed: February 27, 2019
    Publication date: August 27, 2020
    Applicant: Intel Corporation
    Inventors: Aastha Uppal, Omkar Karhade, Ram Viswanath, Je-Young Chang, Weihua Tang, Nitin Deshpande, Mitul Modi, Edvin Cetegen, Sanka Ganesan, Yiqun Bai, Jan Krajniak, Kumar Singh
  • Publication number: 20200273783
    Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a base die disposed on an interposer. The semiconductor package also has a plurality of dies on top of one another to form a stack on the base die. Each die has a top surface and a bottom surface that is opposite from the top surface, and each die has one or more die contacts on at least one of the top surface and the bottom surface that are each electrically coupled to at least one die contact of the base die with one or more wire bonds. The semiconductor package includes a mold layer disposed over and around the plurality of dies, the base die, and the one or more wire bonds. The base die may have a first surface area that exceeds a second surface area of the plurality of stacked dies.
    Type: Application
    Filed: December 30, 2017
    Publication date: August 27, 2020
    Inventors: Robert L. SANKMAN, Sanka GANESAN
  • Publication number: 20200251411
    Abstract: Disclosed herein are integrated circuit (IC) structures that may be included in package substrates. For example, disclosed herein are passive components in package substrate, wherein the passive components include at least one non-circular via and at least one pad in contact with the at least one non-circular via, and the passive components include an inductor or a capacitor. Other embodiments are also disclosed.
    Type: Application
    Filed: April 22, 2020
    Publication date: August 6, 2020
    Applicant: Intel Corporation
    Inventors: Sanka Ganesan, William James Lambert, Zhichao Zhang, Sri Chaitra Jyotsna Chavali, Stephen Andrew Smith, Michael James Hill, Zhenguo Jiang
  • Publication number: 20200235047
    Abstract: Generally discussed herein are systems, methods, and apparatuses that include conductive pillars that are about co-planar. According to an example, a technique can include growing conductive pillars on respective exposed landing pads of a substrate, situating molding material around and on the grown conductive pillars, removing, simultaneously, a portion of the grown conductive pillars and the molding material to make the grown conductive pillars and the molding material about planar, and electrically coupling a die to the conductive pillars.
    Type: Application
    Filed: April 8, 2020
    Publication date: July 23, 2020
    Inventors: Robert L. Sankman, Sanka Ganesan
  • Publication number: 20200227332
    Abstract: An integrated circuit package may be formed having at least one heat dissipation structure within the integrated circuit package itself. In one embodiment, the integrated circuit package may include a substrate; at least one integrated circuit device, wherein the at least one integrated circuit device is electrically attached to the substrate; a mold material on the substrate and adjacent to the at least one integrated circuit device; and at least one heat dissipation structure contacting the at least one integrated circuit, wherein the at least one heat dissipation structure is embedded either within the mold material or between the mold material and the substrate.
    Type: Application
    Filed: January 10, 2019
    Publication date: July 16, 2020
    Applicant: Intel Corporation
    Inventors: Kumar Abhishek Singh, Omkar Karhade, Nitin Deshpande, Mitul Modi, Edvin Cetegen, Aastha Uppal, Debendra Mallik, Sanka Ganesan, Yiqun Bai, Jan Krajniak, Manish Dubey, Ravindranath Mahajan, Ram Viswanath, James C. Matayabas, JR.
  • Patent number: 10672693
    Abstract: Disclosed herein are integrated circuit (IC) structures that may be included in package substrates. For example, disclosed herein are passive components in package substrate, wherein the passive components include at least one non-circular via and at least one pad in contact with the at least one non-circular via, and the passive components include an inductor or a capacitor. Other embodiments are also disclosed.
    Type: Grant
    Filed: April 3, 2018
    Date of Patent: June 2, 2020
    Assignee: Intel Corporation
    Inventors: Sanka Ganesan, William James Lambert, Zhichao Zhang, Sri Chaitra Jyotsna Chavali, Stephen Andrew Smith, Michael James Hill, Zhenguo Jiang
  • Patent number: 10658765
    Abstract: A method of forming a planar antenna on a first substrate. An antenna feedline is formed on a peelable copper film of a carrier. A dielectric with no internal conductive layer is formed on the feedline. A planar antenna is formed on one of two parallel sides of the dielectric and a feed port is formed adjacent the other parallel side. The feedline connects the antenna with the feed port. One plane of the planar antenna is configured for perpendicular attachment to a second substrate. The feedline is connected to the planar antenna by a via through the dielectric. The peelable copper is removed and the structure is etched to produce the planar antenna on the substrate. Two planar antennas on substrates can be perpendicularly attached to another substrate to form side-firing antennas.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: May 19, 2020
    Assignee: Intel Corporation
    Inventors: Sri Chaitra Jyotsna Chavali, Sanka Ganesan, William J. Lambert, Debendra Mallik, Zhichao Zhang
  • Patent number: 10658279
    Abstract: Electronic assemblies and methods including the formation of interconnect structures are described. In one embodiment an apparatus includes semiconductor die and a first metal bump on the die, the first metal bump including a surface having a first part and a second part. The apparatus also includes a solder resistant coating covering the first part of the surface and leaving the second part of the surface uncovered. Other embodiments are described and claimed.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: May 19, 2020
    Assignee: INTEL CORPORATION
    Inventors: Sanka Ganesan, Zhiguo Qian, Robert L. Sankman, Krishna Srinivasan, Zhaohui Zhu
  • Patent number: 10651116
    Abstract: Generally discussed herein are systems, methods, and apparatuses that include conductive pillars that are about co-planar. According to an example, a technique can include growing conductive pillars on respective exposed landing pads of a substrate, situating molding material around and on the grown conductive pillars, removing, simultaneously, a portion of the grown conductive pillars and the molding material to make the grown conductive pillars and the molding material about planar, and electrically coupling a die to the conductive pillars.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: May 12, 2020
    Assignee: Intel Corporation
    Inventors: Robert L. Sankman, Sanka Ganesan