Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.

Abstract: An imaging device includes a first substrate, and a second substrate stacked on the first substrate. A first connection portion and a second connection portion are between the first substrate and the second substrate. A first pixel and a second pixel each include a photoelectric converter that converts incident light into a signal charge, and a detection circuit that detects the signal charge. The first substrate includes the photoelectric converter and the detection circuit. The second substrate includes a first line, and a voltage source that is coupled to the detection circuit of the first pixel, via the first line and the first connection portion, and that is coupled to the detection circuit of the second pixel, via the first line and the second connection portion.

Abstract: A biometric authentication system includes a first image capturer that captures a visible light image that is imaged by picking up first light reflected from a skin portion of a subject that is irradiated with visible light; a second image capturer that captures a first infrared image that is imaged by picking up second light that is reflected from the skin portion irradiated with first infrared light and that has a wavelength region including a first wavelength; and a determiner that determines, in accordance with a result of comparing the visible light image with the first infrared image, whether the subject is a living body and outputs a determination result.

Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry that supplies a first voltage and a second voltage less than the first voltage between the first electrode and the second electrode such that the first voltage is applied at least one time in a frame; and a controller that derives a total length of at least one period in which the first voltage is applied in the frame, the total length corresponding to an attenuation ratio set for the frame, and causes the voltage supply circuitry to supply the first voltage in the at least one period having the total length in the frame.

Abstract: An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 ?m, and the material has a quantum nanostructure.

Abstract: In an imaging device, a first digital signal corresponding to a first analog signal read out from a pixel, and a second digital signal corresponding to the amount of charge accumulated during a first exposure period following a period for reading the first analog signal. A difference is acquired between a first difference and a second difference wherein the first difference is a difference between a third digital signal and the second digital signal, the third digital signal is a digital signal corresponding to the amount of charge cumulatively accumulated during the first exposure period and a following second exposure period, and the second difference is a difference between the second digital signal and the first digital signal. At least one of the first exposure period or the second exposure period includes a period during which the first light source is in the on-state.

Abstract: A camera system includes: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer converting incident light into electric charge; voltage application circuitry; and a controller that derives a duty cycle corresponding to an attenuation ratio set for a first frame and that causes the voltage application circuitry to apply a pulse voltage having the duty cycle between the first electrode and the second electrode in the first frame.

Abstract: An imaging device including: a first pixel and a second pixel that are arranged along a first direction, the first pixel and the second pixel each including a photoelectric converter that converts light into a charge, a charge accumulator that accumulates the charge, and a first transistor one of a source and a drain of which is connected to the charge accumulator; a first line and a second line that each extend along the first direction; first voltage supply circuitry that is connected to the first transistor of the first pixel through the first line; and second voltage supply circuitry that is connected to the first transistor of the second pixel through the second line.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: An imaging device including a semiconductor substrate; a first pixel including a first photoelectric converter configured to convert incident light into charge, and a first diffusion region in the semiconductor substrate, configured to electrically connected to the first photoelectric converter and a second pixel including a second photoelectric converter, configured to convert incident light into charge, and a second diffusion region in the semiconductor substrate, configured to electrically connected to the second photoelectric converter, wherein an area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, both the first diffusion region and the second diffusion region overlap with the first photoelectric converter in the plan view, and neither the first diffusion region nor the second diffusion region overlaps with the second photoelectric converter in the plan view.

Abstract: An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 ?m, and the material has a quantum nanostructure.

Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode.

Abstract: An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.

Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 ?m or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 ?m or longer and shorter than 1.1 ?m is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 ?m or longer.

Abstract: An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

Abstract: A camera system including an imaging device that captures a first image by a normal exposure including only one exposure and that captures a second image by a multiple exposure including a plurality of exposures; and a control circuit. The the imaging device captures the second image in a first frame period, and the control circuit determines, based on the second image captured in the first frame period, whether to capture an image by the normal exposure or capture an image by the multiple exposure in a second frame period following the first frame period.

Abstract: An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

Abstract: An imaging device includes a first substrate, and a second substrate stacked on the first substrate. A first connection portion and a second connection portion are between the first substrate and the second substrate. A first pixel and a second pixel each include a photoelectric converter that converts incident light into a signal charge, and a detection circuit that detects the signal charge. The first substrate includes the photoelectric converter and the detection circuit. The second substrate includes a first line, and a voltage source that is coupled to the detection circuit of the first pixel, via the first line and the first connection portion, and that is coupled to the detection circuit of the second pixel, via the first line and the second connection portion.

Abstract: An imaging device that includes pixels arranged in a matrix having rows and columns, the pixels including first pixels and second pixels different from the first pixels, the first pixels and the second pixels being located in one of the columns, each of the pixels including a photoelectric converter that converts incident light into signal charge, and a first transistor having a first gate, a first source and a first drain, the first gate being coupled to the photoelectric converter. The imaging device further includes a first line coupled to one of the first source and drain of the first pixels; a second line coupled to one of the first source and drain of the second pixels; a third line coupled to the other of the first source and drain of the first pixels; and voltage circuitry coupled to the third line and that supplies a first and second voltage.