Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0<x?0.500, 0<y?0.350, and 0.900?z?0.995. The dielectric film includes a layer containing columnar crystal grains and a layer containing spherical crystal grains, and contains as a sub-component at least one of divalent metal elements and trivalent metal elements.

Abstract: A thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and a large-capacity thin-film capacitor element using the thin-film dielectric, in which a BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant; also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5???1.5 holds, where ? is the molar ratio of the A-group to the B-group.

Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0<x?0.500, 0<y?0.350, and 0.900?z?0.995. The dielectric film includes a layer containing columnar crystal grains and a layer containing spherical crystal grains, and contains as a sub-component at least one of divalent metal elements and trivalent metal elements.

Abstract: A dielectric composition containing a crystalline phase represented by a general formula of Bi12SiO20 and a crystalline phase represented by a general formula of Bi2SiO5 as the main components. The dielectric composition contains preferably 5 mass % to 99 mass % of the Bi2SiO5 crystalline phase, and more preferably 30 mass % to 99 mass %.

Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001?x?0.400, 0.001?y?0.400, and 0.900?z<0.995. In an X-ray diffraction pattern of the dielectric composition, the dielectric composition has the relation 0.00°?2?c?2?t<0.20° between (001) plane diffraction peak position 2?t of a tetragonal structure represented by the general formula and (100) plane diffraction peak position 2?c of a cubic structure represented by the general formula.

Abstract: The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)?—B—O, x, y and z meet the conditions of 0?x?1, 0?y?1, 0?z?1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by ?, 0.5???1.5.

Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001?x?0.400, 0.001?y?0.400, and 0.900?z<0.995. In an X-ray diffraction pattern of the dielectric composition, the dielectric composition has the relation 0.00°?2?c?2?t<0.20° between (001) plane diffraction peak position 2?t of a tetragonal structure represented by the general formula and (100) plane diffraction peak position 2?c of a cubic structure represented by the general formula.

Abstract: The present invention provides a thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and also provides a large-capacity thin-film capacitor element using the thin-film dielectric. A BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant. Also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5???1.5 holds, where ? is the molar ratio of the A-group to the B-group.

Abstract: A dielectric composition containing a crystalline phase represented by a general formula of Bi12SiO20 and a crystalline phase represented by a general formula of Bi2SiO5 as the main components. The dielectric composition contains preferably 5 mass % to 99 mass % of the Bi2SiO5 crystalline phase, and more preferably 30 mass % to 99 mass %.

Abstract: The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)?—B—O, x, y and z meet the conditions of 0?x?1, 0?y?1, 0?z?1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by ?, 0.5???1.5.

Abstract: A dielectric ceramic composition comprises barium titanate as a main component, and as subcomponents, 1.00 to 2.50 moles of an oxide of Mg, 0.01 to 0.20 mole of an oxide of Mn and/or Cr, 0.03 to 0.15 mole of an oxide of at least one element selected from a group consisting of V, Mo and W, 0.20 to 1.50 mole of an oxide of R1 where R1 is at least one selected from a group consisting of Y and Ho, 0.20 to 1.50 mole of an oxide of R2 where R2 is at least one selected from a group consisting of Eu, Gd and Tb and 0.30 to 1.50 mole of an oxide of Si and/or B, in terms of each oxide with respect to 100 moles of the barium titanate.

Abstract: A multilayer ceramic electronic component comprises an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer includes a compound expressed by ABO3 (A includes Ba, and may include Ca or Sr; and B includes Ti, and may include Zr or Hf), and includes 0.75 to 2.0 moles of MgO, 0.4 to 1.0 mole of an oxide of Y, Dy, Ho and the like in terms of the oxide, and 0.4 to 0.8 mole of SiO2 per 100 moles of the compound. A segregation phase containing Mg is formed in at least a part of an electrode missing portion. Line coverage of the electrode layer is 60 to 90% and relations of 0.3 ?m?t1?2.0 and 0.3 ?m?t2<1.0 ?m are fulfilled.

Abstract: A dielectric ceramic composition comprises barium titanate as a main component, and as subcomponents, 1.00 to 2.50 moles of an oxide of Mg, 0.01 to 0.20 mole of an oxide of Mn and/or Cr, 0.03 to 0.15 mole of an oxide of at least one element selected from a group consisting of V, Mo and W, 0.20 to 1.50 mole of an oxide of R1 where R1 is at least one selected from a group consisting of Y and Ho, 0.20 to 1.50 mole of an oxide of R2 where R2 is at least one selected from a group consisting of Eu, Gd and Tb and 0.30 to 1.50 mole of an oxide of Si and/or B, in terms of each oxide with respect to 100 moles of the barium titanate.

Abstract: Dielectric ceramic composition comprising a compound having perovskite-type crystal structure and Y-oxide, and the compound is shown by a general formula ABO3, where “A” is Ba alone or Ba and at least one selected from Ca and Sr, and “B” is Ti alone or Ti and Zr. The dielectric ceramic composition comprises dielectric particles including the above compound as a main component. When ?=1000×(c/a)/d is defined, wherein “d [nm]” is an average particle diameter of raw material powders of the above compound and “c/a” is a ratio of lattice constants of c-axis and a-axis in a perovskite-type crystal structure of the raw material powders, “?” is 11.0 or less.

Abstract: Disclosed is a multilayer ceramic electronic component, comprising an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer (2) includes a compound expressed by ABO3 (A includes Ba, and may include Ca or Sr; and B includes Ti, and may include Zr or Hf), and includes 0.75 to 2.0 moles of MgO, 0.4 to 1.0 mole of an oxide of Y, Dy, Ho and the like in terms of the oxide, and 0.4 to 0.8 mole of SiO2 per 100 moles of the compound. A segregation phase (20) containing Mg is formed in at least a part of an electrode missing portion (30), where the electrode layer is supposed to be formed but no electrode layer is formed. Line coverage of the electrode layer (3) is 60 to 90% and relations of 0.3?t1?2.0 and 0.3?t2<1.0 are fulfilled.

Abstract: A dielectric ceramic composition of the invention comprises: BaTiO3 as a main component, MgO: 0.50 to 3.0 moles, MnO: 0.05 to 0.5 moles, oxide (RE12O3) of element selected from Sm, Eu, and Gd, oxide (RE22O3) of element selected from Tb and Dy, oxide (RE32O3) of element selected from Y, Ho, Er, Yb, Tm and Lu, BaZrO3: 0.20 to 1.0 moles, and oxide of element selected from V, Ta, Mo, Nb, and W: 0.05 to 0.25 moles as subcomponents wherein each subcomponent is calculated as a conversion of an oxide or composite oxide, with respect to 100 moles of the main component, and contents of said RE12O3, RE22O3 and RE32O3 satisfy RE12O3<RE22O3 and (RE12O3+RE22O3)?RE32O3.

Abstract: A dielectric ceramic composition of the invention comprises: BaTiO3 as a main component, MgO: 0.50 to 3.0 moles, MnO: 0.05 to 0.5 moles, oxide (RE12O3) of element selected from Sm, Eu, and Gd, oxide (RE22O3) of element selected from Tb and Dy, oxide (RE32O3) of element selected from Y, Ho, Er, Yb, Tm and Lu, BaZrO3: 0.20 to 1.0 moles, and oxide of element selected from V, Ta, Mo, Nb, and W: 0.05 to 0.25 moles as subcomponents wherein each subcomponent is calculated as a conversion of an oxide or composite oxide, with respect to 100 moles of the main component, and contents of said RE12O3, RE22O3 and RE32O3 satisfy RE12O3<RE22O3 and (RE12O3+RE22O3)?RE32O3.