Abstract: According to one embodiment, a solar cell includes first and second conductive layers, first and second counter conductive layers, first and second photoelectric conversion layers, first and second compound layers. The first counter conductive layer includes a first conductive region. A direction from the first conductive layer to the first conductive region is along a first direction. The first compound layer includes a first compound region provided between the first photoelectric conversion layer and the first conductive region. A second direction from the first conductive layer to the second conductive layer crosses the first direction. The second counter conductive layer includes a second conductive region electrically connected with the first conductive layer. A direction from the second conductive layer to the second conductive region is along the first direction. A direction from the first conductive region to the second conductive region is along the second direction.

Abstract: A method for manufacturing a stacked thin film, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24×d [Pa] or more and 2.4×d [Pa] or less when a deposition rate is d [?m/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300° C. or more and 600° C. or less, in formation of the photoelectric conversion layer.

Abstract: A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode to 10 nm to 100 nm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.

Abstract: The solar cell of embodiments includes a transparent first electrode, a photoelectric conversion layer mainly containing cuprous oxide on the first electrode, an n-type layer on the photoelectric conversion layer, and a transparent second electrode on the n-type layer. A mixed region or/and a mixed layer are present on the n-type layer side of the photoelectric conversion layer, and the mixed region and the mixed layer contain elements belonging to a first group, a second group, and a third group. The first group is one or more elements selected from the group consisting of Zn and Sn, the second group is one or more elements selected from the group consisting of Y, Sc, V, Cr, Mn, Fe, Ni, Zr, B, Al, Ga, Nb, Mo, Ti, F, Cl, Br, and I, and the third group is one or more elements selected from the group consisting of Ge and Si.

Abstract: A multi-junction solar cell module of an embodiment includes: a first solar cell module disposed on a light incident side and including a plurality of first solar cells and a first connection wiring electrically connecting the plurality of the first solar cells; a second solar cell module including a plurality of second solar cells and a second connection wiring electrically connecting the plurality of the second solar cells; and an adhesive layer between the first solar cell module and the second solar cell module.

Abstract: According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. When a transmittance of the solar cell is measured in a wavelength range of 700 to 1000 nm, an average of the transmittance of the solar cell is 60% or more.

Abstract: The solar cell of embodiments includes a transparent first electrode, a photoelectric conversion layer mainly containing cuprous oxide on the first electrode, an n-type layer on the photoelectric conversion layer, and a transparent second electrode on the n-type layer. A mixed region or/and a mixed layer are present on the n-type layer side of the photoelectric conversion layer, and the mixed region and the mixed layer contain elements belonging to a first group, a second group, and a third group. The first group is one or more elements selected from the group consisting of Zn and Sn, the second group is one or more elements selected from the group consisting of Y, Sc, V, Cr, Mn, Fe, Ni, Zr, B, Al, Ga, Nb, Mo, Ti, F, Cl, Br, and I, and the third group is one or more elements selected from the group consisting of Ge and Si.

Abstract: According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

Abstract: A solar cell module of an embodiment includes: a first solar panel having a plurality of first sub modules each including a plurality of first solar cells; and a second solar panel layered with the first solar panel, the second solar panel having a plurality of second solar cells. The first solar panel exists on the side where light is incident. The first solar panel and the second solar panel are electrically connected in parallel. The first solar cells included in the first submodules are electrically connected in series. The first submodules are electrically connected in parallel.

Abstract: A solar cell of an embodiment includes: a first electrode; a second electrode; a light-absorbing layer interposed between the first electrode and the second electrode; a dot region interposed between the first electrode and the light-absorbing layer, the dot region including dots.

Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

Abstract: According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.

Abstract: A method for manufacturing a stacked thin film, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24×d [Pa] or more and 2.4×d [Pa] or less when a deposition rate is d [?m/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300° C. or more and 600° C. or less, in formation of the photoelectric conversion layer.

Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.

Abstract: According to one embodiment, a solar cell system includes a first solar cell including a first terminal and a second terminal, a second solar cell including a third terminal and a fourth terminal, and a voltage converter including a fifth terminal and a sixth terminal. The third terminal is electrically connected to the first terminal. The fifth terminal is electrically connected to the fourth terminal. The voltage converter causes a second absolute value to be smaller than a first absolute value. The first absolute value is of a difference between a first potential difference and a second potential difference. The first potential difference is between the first and second terminals. The second potential difference is between the first and fourth terminals. The second absolute value is of a difference between the first and third potential differences. The third potential difference is between the first and sixth terminals.

Abstract: A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode to 10 nm to 100 nm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.

Abstract: A solar module of an embodiment includes: a first solar panel having a plurality of first submodules each including a plurality of first solar cells; and a second solar panel layered with the first solar panel, the second solar panel having a plurality of second submodules each including a plurality of second solar cells. The first solar panel is provided on a side where light is incident. The first solar panel and the second solar panel are electrically connected in parallel. The plurality of first solar cells included in each of the plurality of first submodules is electrically connected in series. The plurality of first submodules is electrically connected in parallel. The plurality of second solar cells included in each of the plurality of second submodules is electrically connected in series. The plurality of second submodules is electrically connected in parallel.

Abstract: According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. When a transmittance of the solar cell is measured in a wavelength range of 700 to 1000 nm, an average of the transmittance of the solar cell is 60% or more.

Abstract: According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. In a case where a photoluminescence spectrum of the photoelectric conversion layer is measured at a temperature of 100 K or lower, a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A?100B).

Abstract: A multi-junction solar cell module of an embodiment includes: a first solar cell module disposed on a light incident side and including a plurality of first solar cells and a first connection wiring electrically connecting the plurality of the first solar cells; a second solar cell module including a plurality of second solar cells and a second connection wiring electrically connecting the plurality of the second solar cells; and an adhesive layer between the first solar cell module and the second solar cell module.