Patents by Inventor Sari Johanna Kaipio

Sari Johanna Kaipio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7749871
    Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: July 6, 2010
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 7485340
    Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: February 3, 2009
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 7329590
    Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
    Type: Grant
    Filed: October 19, 2004
    Date of Patent: February 12, 2008
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 7144809
    Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
    Type: Grant
    Filed: November 16, 2004
    Date of Patent: December 5, 2006
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6902763
    Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surface sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
    Type: Grant
    Filed: October 16, 2000
    Date of Patent: June 7, 2005
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6863727
    Abstract: This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: March 8, 2005
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Suvi Päivikki Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6821889
    Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: November 23, 2004
    Assignee: ASM International N.V.
    Inventors: Kai-Erik Elers, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6800552
    Abstract: The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: October 5, 2004
    Assignee: ASM International, N.V.
    Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6794287
    Abstract: A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.
    Type: Grant
    Filed: March 20, 2003
    Date of Patent: September 21, 2004
    Assignee: ASM International NV
    Inventors: Ville Antero Saanila, Kai-Erik Elers, Sari Johanna Kaipio, Pekka Juha Soininen
  • Publication number: 20030186495
    Abstract: A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.
    Type: Application
    Filed: March 20, 2003
    Publication date: October 2, 2003
    Inventors: Ville Antero Saanila, Kai-Erik Elers, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6599572
    Abstract: A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: July 29, 2003
    Assignee: ASM Microchemistry Oy
    Inventors: Ville Antero Saanila, Kai-Erik Elers, Sari Johanna Kaipio, Pekka Juha Soininen
  • Publication number: 20030031807
    Abstract: The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
    Type: Application
    Filed: September 17, 2002
    Publication date: February 13, 2003
    Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Publication number: 20020187256
    Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
    Type: Application
    Filed: July 30, 2002
    Publication date: December 12, 2002
    Inventors: Kai-Erik Elers, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6482262
    Abstract: The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: November 19, 2002
    Assignee: ASM Microchemistry Oy
    Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Patent number: 6475276
    Abstract: The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
    Type: Grant
    Filed: October 13, 2000
    Date of Patent: November 5, 2002
    Assignee: ASM Microchemistry Oy
    Inventors: Kai-Erik Elers, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
  • Publication number: 20010009695
    Abstract: A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.
    Type: Application
    Filed: January 18, 2001
    Publication date: July 26, 2001
    Inventors: Ville Antero Saanila, Kai-Erik Elers, Sari Johanna Kaipio, Pekka Juha Soininen