Patents by Inventor Satendra Kumar GAUTAM

Satendra Kumar GAUTAM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dram and method of making
    Patent number: 11456301
    Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
    Type: Grant
    Filed: July 16, 2020
    Date of Patent: September 27, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Arvind Kumar, Mahendra Pakala, Sanjeev Manhas, Satendra Kumar Gautam
  • DRAM AND METHOD OF MAKING
    Publication number: 20200350318
    Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
    Type: Application
    Filed: July 16, 2020
    Publication date: November 5, 2020
    Inventors: Arvind KUMAR, Mahendra PAKALA, Sanjeev MANHAS, Satendra Kumar GAUTAM
  • Dram and method of making
    Patent number: 10727232
    Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: July 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Arvind Kumar, Mahendra Pakala, Sanjeev Manhas, Satendra Kumar Gautam
  • DRAM AND METHOD OF MAKING
    Publication number: 20200144272
    Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
    Type: Application
    Filed: January 9, 2019
    Publication date: May 7, 2020
    Inventors: Arvind KUMAR, Mahendra PAKALA, Sanjeev MANHAS, Satendra Kumar GAUTAM