Patents by Inventor Sato Yoshihiro

Sato Yoshihiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8330167
    Abstract: A GaN-based field effect transistor 101 comprises: a substrate 101; a channel layer 104 comprised of p-type GaN-based semiconductor material formed on the substrate 101; an electron supplying layer 106 formed on said channel layer 104 and comprised of GaN-based semiconductor material which has band gap energy greater than that of said channel layer 104; a gate insulating film 111 formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode 112 formed on said gate insulating film; a source electrode 109 and a drain electrode 110 formed so that said gate electrode 112 positions in between them; and a second insulating film 113 formed on said electron supplying layer, which is a different insulating film from said gate insulating film 111 and has electron collapse decreasing effect.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: December 11, 2012
    Assignee: Furukawa Electric Co., Ltd
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro
  • Patent number: 8330187
    Abstract: A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of the electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of the drift layer, the electron supply layer, and the surface layer down to a depth that reaches to the channel layer. A source electrode and a drain electrode are formed so that the recess section positions between them, a gate insulation film is formed on the surface layer and on inner-surface of the recess section including the channel layer, and a gate electrode is formed on the gate insulating film in the recess section.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: December 11, 2012
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro
  • Publication number: 20100244101
    Abstract: There is provided a method for fabricating a semiconductor device capable of setting carbon concentration within crystal to a desirable value while improving electron mobility. The carbon concentration within a buffer layer is controlled by introducing material gas of hydrocarbon or organic compounds containing carbon such as propane as a dopant in forming the buffer layer by introducing trimethylgallium (TMGa) and ammonium (NH3) as gaseous nitride compound semiconductor materials into a chamber in which a substrate is disposed.
    Type: Application
    Filed: March 12, 2010
    Publication date: September 30, 2010
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Takuya Kokawa, Sato Yoshihiro, Kato Sadahiro, Iwami Masayuki
  • Publication number: 20100148184
    Abstract: A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of said electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of the drift layer, the electron supply layer, and the surface layer down to a depth that reaches to the channel layer. A source electrode and a drain electrode are formed so that the recess section positions between them, a gate insulation film is formed on the surface layer and on inner-surface of the recess section including the channel layer, and a gate electrode is formed on the gate insulating film in the recess section.
    Type: Application
    Filed: November 30, 2009
    Publication date: June 17, 2010
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro
  • Publication number: 20100127275
    Abstract: A GaN-based field effect transistor 101 comprises: a substrate 101; a channel layer 104 comprised of p-type GaN-based semiconductor material formed on the substrate 101; an electron supplying layer 106 formed on said channel layer 104 and comprised of GaN-based semiconductor material which has band gap energy greater than that of said channel layer 104; a gate insulating film 111 formed on a surface of said channel layer which was exposed after a part of said electron supplying layer was removed; a gate electrode 112 formed on said gate insulating film; a source electrode 109 and a drain electrode 110 formed so that said gate electrode 112 positions in between them; and a second insulating film 113 formed on said electron supplying layer, which is a different insulating film from said gate insulating film 111 and has electron collapse decreasing effect.
    Type: Application
    Filed: November 25, 2009
    Publication date: May 27, 2010
    Applicant: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Nomura Takehiko, Sato Yoshihiro, Kambayashi Hiroshi, Kaya Shusuke, Iwami Masayuki, Kato Sadahiro