Patents by Inventor Satoko Shitagaki

Satoko Shitagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10644250
    Abstract: A light-emitting element with high emission efficiency and high reliability is provided. The light-emitting element includes a light-emitting layer containing a first organic compound, a second organic compound, and a guest material. The first organic compound has a nitrogen-containing six-membered heteroaromatic skeleton. In the light-emitting layer, the weight ratio of an organic compound having a nitrogen-containing five-membered heterocyclic skeleton with an NH group, a secondary amine skeleton with an NH group, or a primary amine skeleton with an NH group to the first organic compound is less than or equal to 0.03, or alternatively, the weight ratio of the organic compound having a nitrogen-containing five-membered heterocyclic skeleton with an NH group, a secondary amine skeleton with an NH group, or a primary amine skeleton with an NH group to the second organic compound is less than or equal to 0.01.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: May 5, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeyoshi Watabe, Satoko Shitagaki, Kunihiko Suzuki, Harue Osaka, Satomi Mitsumori, Satoshi Seo
  • Patent number: 10629823
    Abstract: To provide a light-emitting element with high emission efficiency. In a light-emitting element including an organic compound between a pair of electrodes, the molecular weight X of the organic compound is 450 or more and 1500 or less, and the absorption edge of the organic compound is at 380 nm or more. By liquid chromatography mass spectrometry in a positive mode in which an argon gas is made to collide with the organic compound subjected to separation using a liquid chromatograph at any energy higher than or equal to 1 eV and lower than or equal to 30 eV, a product ion is detected at least around m/z=(X?240).
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: April 21, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Harue Osaka, Satoko Shitagaki, Nobuharu Ohsawa
  • Publication number: 20200119276
    Abstract: An object is to provide a light-emitting element having high light-emission efficiency by provision of a novel fluorene derivative as represented by General Formula (G1) below In the formula, R1 to R8 independently represent any of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, or a substituted or unsubstituted biphenyl group. Further, ?1 to ?4 independently represent any of a substituted or unsubstituted arylene group having 6 to 12 carbon atoms. Furthermore, Ar1 and Ar2 independently represent any of an aryl group having 6 to 13 carbon atoms in a ring and Ar3 represents an alkyl group having 1 to 6 carbon atoms or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. J, k, m, and n each independently represent 0 or 1.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 16, 2020
    Inventors: Harue OSAKA, Satoko SHITAGAKI, Tsunenori SUZUKI, Nobuharu OHSAWA, Sachiko KAWAKAMI, Satoshi SEO
  • Publication number: 20200111966
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Application
    Filed: December 5, 2019
    Publication date: April 9, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi SEO, Nobuharu OHSAWA, Satoko SHITAGAKI, Hideko INOUE, Hiroshi KADOMA, Harue OSAKA, Kunihiko SUZUKI, Yasuhiko TAKEMURA
  • Patent number: 10600972
    Abstract: A light-emitting element which has low driving voltage and high emission efficiency, is provided. The light-emitting element includes, between a pair of electrodes, a hole-transport layer and a light-emitting layer over the hole-transport layer. The light-emitting layer contains a first organic compound having an electron-transport property, a second organic compound having a hole-transport property, and a light-emitting third organic compound converting triplet excitation energy into light emission. A combination of the first organic compound and the second organic compound forms an exciplex. The hole-transport layer contains at least a fourth organic compound whose HOMO level is lower than or equal to that of the second organic compound and a fifth organic compound whose HOMO level is higher than that of the second organic compound.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: March 24, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromi Seo, Satoshi Seo, Satoko Shitagaki
  • Patent number: 10593895
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: March 17, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 10586934
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: March 10, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 10573829
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element is provided which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes, in which a combination of the first organic compound and the second organic compound forms an exciplex (excited complex). The light-emitting element transfers energy by utilizing an overlap between the emission spectrum of the exciplex and the absorption spectrum of the phosphorescent compound and thus has high energy transfer efficiency. Therefore, a light-emitting element having high external quantum efficiency can be obtained.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: February 25, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 10556864
    Abstract: To provide a light-emitting element having high luminous efficiency and to provide a light-emitting device and an electronic device which consumes low power and is driven at low voltage, a carbazole derivative represented by the general formula (1) is provided. In the formula, ?1, ?2, ?3, and ?4 each represent an arylene group having less than or equal to 13 carbon atoms; Ar1 and Ar2 each represent an aryl group having less than or equal to 13 carbon atoms; R1 represents any of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, and a substituted or unsubstituted biphenyl group; and R2 represents any of an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, and a substituted or unsubstituted biphenyl group. In addition, l, m, and n are each independently 0 or 1.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: February 11, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiroko Nomura, Harue Osaka, Takahiro Ushikubo, Sachiko Kawakami, Satoshi Seo, Satoko Shitagaki
  • Patent number: 10553797
    Abstract: An object is to provide a light-emitting element having high light-emission efficiency by provision of a novel fluorene derivative as represented by General Formula (G1) below. In the formula, R1 to R8 independently represent any of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, or a substituted or unsubstituted biphenyl group. Further, ?1 to ?4 independently represent any of a substituted or unsubstituted arylene group having 6 to 12 carbon atoms. Furthermore, Ar1 and Ar2 independently represent any of an aryl group having 6 to 13 carbon atoms in a ring and Ar3 represents an alkyl group having 1 to 6 carbon atoms or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. J, k, m, and n each independently represent 0 or 1.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: February 4, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Harue Osaka, Satoko Shitagaki, Tsunenori Suzuki, Nobuharu Ohsawa, Sachiko Kawakami, Satoshi Seo
  • Publication number: 20200035940
    Abstract: Provided is a light-emitting element which has an anode, a light-emitting layer over the anode, an electron-transport layer over and in contact with the light-emitting layer, an electron-injection layer over and in contact with the electron-transport layer, and a cathode over and in contact with the electron-injection layer. The light-emitting layer has an electron-transport property, and the electron-transport layer includes an anthracene derivative. The light-emitting layer further includes a phosphorescent substance. This device structure allows the formation of a highly efficient blue-emissive light-emitting element even though the phosphorescent substance has higher triplet energy than the anthracene derivative which directly contacts with the light-emitting layer.
    Type: Application
    Filed: October 4, 2019
    Publication date: January 30, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Takahiro Ishisone, Satoshi Seo, Takeyoshi Watabe
  • Publication number: 20200013966
    Abstract: A novel organic compound with which the emission characteristics, emission efficiency, and reliability of a light-emitting element can be improved is provided. The organic compound has an imidazo[1,2-f]phenanthridine skeleton and a dibenzothiophene skeleton or a dibenzofuran skeleton bonded through an arylene group. The light-emitting element including the organic compound in a light-emitting layer shows high efficiency and low power consumption.
    Type: Application
    Filed: September 17, 2019
    Publication date: January 9, 2020
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoya HIROSE, Hiroshi KADOMA, Satoko SHITAGAKI, Satoshi SEO
  • Patent number: 10505120
    Abstract: A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: December 10, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Seo, Nobuharu Ohsawa, Satoko Shitagaki, Hideko Inoue, Hiroshi Kadoma, Harue Osaka, Kunihiko Suzuki, Yasuhiko Takemura
  • Patent number: 10497880
    Abstract: A novel substance with which an increase in life and emission efficiency of a light-emitting element can be achieved is provided. A carbazole compound having a structure represented by General Formula (G1) is provided. Note that a substituent which makes the HOMO level and the LUMO level of a compound in which a bond of the substituent is substituted with hydrogen deep and shallow, respectively is used as each of substituents in General Formula (G1) (R1, R2, Ar3, and ?3). Further, a subsistent which makes the band gap (Bg) and the T1 level of a compound in which a bond of the substituent is substituted with hydrogen wide and high is used as each of the substituents in General Formula (G1) (R1, R2, Ar3, and ?3).
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: December 3, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Harue Osaka, Takako Takasu, Hiroshi Kadoma, Yuko Kawata, Satoko Shitagaki, Hiromi Nowatari, Tsunenori Suzuki, Nobuharu Ohsawa, Satoshi Seo
  • Patent number: 10439156
    Abstract: Provided is a light-emitting element which has an anode, a light-emitting layer over the anode, an electron-transport layer over and in contact with the light-emitting layer, an electron-injection layer over and in contact with the electron-transport layer, and a cathode over and in contact with the electron-injection layer. The light-emitting layer has an electron-transport property, and the electron-transport layer includes an anthracene derivative. The light-emitting layer further includes a phosphorescent substance. This device structure allows the formation of a highly efficient blue-emissive light-emitting element even though the phosphorescent substance has higher triplet energy than the anthracene derivative which directly contacts with the light-emitting layer.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: October 8, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Takahiro Ishisone, Satoshi Seo, Takeyoshi Watabe
  • Patent number: 10439150
    Abstract: A light-emitting element emitting phosphorescence and having high emission efficiency, in which a property of injecting holes to a light-emitting layer is increased, is provided. The light-emitting layer of the light-emitting element includes a first organic compound represented by the following general formula (G1) and a second organic compound which is a phosphorescent compound. The difference between the HOMO level of the first organic compound and the HOMO level of the second organic compound is lower than or equal to 0.3 eV.
    Type: Grant
    Filed: November 14, 2016
    Date of Patent: October 8, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomonori Nakayama, Takako Takasu, Satoko Shitagaki, Harue Osaka, Toshiki Hamada
  • Patent number: 10424755
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains at least a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: September 24, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hiromi Seo, Satoko Shitagaki, Satoshi Seo, Takahiro Ushikubo, Toshiki Sasaki, Shogo Uesaka
  • Patent number: 10403839
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: September 3, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Patent number: 10367160
    Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having low drive voltage is provided. Provided is a light-emitting element which includes a light-emitting layer containing a phosphorescent compound, a first organic compound, and a second organic compound between a pair of electrodes. A combination of the first organic compound and the second organic compound forms an exciplex (excited complex). An emission spectrum of the exciplex overlaps with an absorption band located on the longest wavelength side of an absorption spectrum of the phosphorescent compound. A peak wavelength of the emission spectrum of the exciplex is longer than or equal to a peak wavelength of the absorption band located on the longest wavelength side of the absorption spectrum of the phosphorescent compound.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: July 30, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoshi Seo, Satoko Shitagaki, Nobuharu Ohsawa, Hideko Inoue, Kunihiko Suzuki
  • Patent number: 10355219
    Abstract: A novel organic compound having a high hole-transport property is provided. A long-lifetime light-emitting element is provided. An organic compound represented by General Formula (G0) is provided. In General Formula (G0), Ar1 represents a substituted or unsubstituted naphthyl group, Ar2 represents a substituted or unsubstituted carbazolyl group, Ar3 represents a substituted or unsubstituted fluorenyl group or a substituted or unsubstituted spirofluorenyl group, and ?1 and ?2 each independently represent a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenyldiyl group.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: July 16, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Takao Hamada, Kanta Abe, Satoshi Seo