Abstract: A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

Abstract: A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

Abstract: A semiconductor material includes polythiophene, sulfonic acid, and copper ion. The copper ion is bonded to the sulfonic acid.

Abstract: A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

Abstract: A gas sensor includes: a gas sensor cartridge; and a gas sensor body to which the gas sensor cartridge, which includes: a case that has an intake port and an exhaust port and serves as a gas sensor chamber; a gas sensor device provided inside the case; an external connection terminal provided at the case and connected to the gas sensor device; a first sealing member that seals the intake port such that the intake port is opened when the gas sensor cartridge is attached to the gas sensor body; and a second sealing member that seals the exhaust port such that the exhaust port is opened when the gas sensor cartridge is attached to the gas sensor body, is detachably attached.

Abstract: A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.

Abstract: A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.

Abstract: A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.

Abstract: A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

Abstract: A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

Abstract: A gas sensor device includes: a pair of electrodes; a conductor that electrically connects the pair of electrodes to each other; and at least one of a thiolate anion and an organic compound having a mercapto group, which is disposed on a surface of the conductor. A gas evaluation apparatus includes a first gas sensor device as described above and a second gas sensor device which has neither the mercapto group nor the thiolate anion disposed on a surface of its conductor.

Abstract: A gas sensor device includes: a sensor film including a sensor surface and a resistance which increases with an increase in an amount of gas adsorbed on the sensor surface; a first electrode, a second electrode, and a third electrode that are electrically coupled to the sensor film; and a protective film that covers the sensor surface in a region between the first electrode and the second electrode, wherein the sensor surface is exposed in a region near the third electrode.

Abstract: A gas sensor includes a p-type semiconductor layer in which a surface at a contacting side with detection target gas is covered with tertiary amine and two electrodes electrically coupled with each other through the p-type semiconductor layer.

Abstract: A detection device includes, a first electrode, a second electrode, a conductor including at least a surface portion made of gold or platinum group metal, which extends from the first electrode to the second electrode so as to make an electric conduction between the first electrode and the second electrode, and a p-type semiconductor provided between the surface portion of the conductor and at least one of the first electrode and the second electrode so as to make an electric connection between the surface portion of the conductor and at least one of the first electrode and the second electrode.

Abstract: A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Abstract: A semiconductor material includes polythiophene, sulfonic acid, and copper ion. The copper ion is bonded to the sulfonic acid.

Abstract: A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

Abstract: A measurement device includes a first flow passage, a heating unit provided on one end side of the first flow passage, a gas detection unit provided on one end side of the first flow passage and capable of detecting a gas through heat applied from the heating unit, and a particle measurement unit which optically measures, at an upper side than the heating unit of the first flow passage, particles passing through the first flow passage.

Abstract: A gas sensor including a first layer including copper (I) bromide, and a second layer, which is disposed on the first layer, and is a p-type semiconductor that is different from the copper (I) bromide, wherein one of the first layer and the second layer is more preferentially in contact with detection-target gas than the other.

Abstract: A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.