Abstract: A fluorine-containing boronic acid ester represented by the general formula: (R1 is a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atoms, R2 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms or phenyl group, n is an integer of 1 to 3, and m is an integer of 0 to 4) having an improved solubility in organic solvents is produced by reacting a fluorine-containing 3,5-dihalogenoanilide derivative represented by the general formula: (R2 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms or phenyl group, X is a halogen atom, n is an integer of 1 to 3, and m is an integer of 0 to 4) with a dialkoxyborane represented by the general formula: (R1 is a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atoms).

Abstract: A fluorinated dicarbonyl fluoride FOCCF(CF3)[OCF2CF(CF3)]lOCF2CF2O[CF(CF3)CF2O]mCF(CF3)COF (l+m is 30-130) is reacted with an aromatic amine XC6H4NHR1 (R1 is H, alkyl, or phenyl and X is I or Br) to obtain a fluorinated polyether compound of the following formula. The compound obtained is mixed with an aromatic boric ester, an organopalladium compound, and a basic inorganic or organic compound (and organophosphorus compound) to form a curable fluorinated polyether composition. This curable fluorinated polyether composition has satisfactory processability including moderate flowability at room temperature. It is applicable to various molding techniques including injection molding and RIM.

Abstract: It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.

Abstract: A fluorine-containing polyether compound having the following general formula: (where R1 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a phenyl group; X is a bromine atom or an iodine atom; l and m each are independently an integer of 10 or more; and l+m is 30-200) can be produced by reaction of a fluorine-containing dicarboxylic acid fluoride compound having the following general formula: (where l and m each are independently an integer of 10 or more, and l+m is 30-200) with an aromatic amine compound having the following general formula: [where R1 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a phenyl group, R2 is a hydrogen atom or a group represented by the general formula —SiR3R4R5 (where R3, R4 and R5 each are independently an alkyl group having 1 to 10 carbon atoms or a phenyl group); and X is a bromine atom or an iodine atom] preferably in the presence of pyridine or a tertiary amine compound such as triethylamine, etc.

Abstract: A fluorine-containing boronic acid ester represented by the general formula: (R1 is a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atoms, R2 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms or phenyl group, n is an integer of 1 to 3, and m is an integer of 0 to 4) having an improved solubility in organic solvents is produced by reacting a fluorine-containing 3,5-dihalogenoanilide derivative represented by the general formula: (R2 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms or phenyl group, X is a halogen atom, n is an integer of 1 to 3, and m is an integer of 0 to 4) with a dialkoxyborane represented by the general formula: (R1 is a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atoms).

Abstract: A fluorine-containing boronic acid ester compound (R1: a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atom, m: 1 to 5, and n: 3 to 7) having a low melting point is produced by reacting a 3,5-dihalogeno fluorine-containing phenol derivative with a dialkoxyborane The fluorine-containing boronic acid ester compound is highly soluble in organic solvents and has a low melting point. The fluorine-containing boronic acid ester compound can suitably be used as a starting material for the production of conjugated polymer materials or as a curing agent for elastomeric polymer materials.

Abstract: A fluorine-containing elastomer having a copolymer composition, which comprises (a) 50-85 mol. % of vinylidene fluoride, (b) 0-25 mol. % of tetrafluoroethylene, (c) 7-20 mol. % of perfluoro(methyl vinyl ether), (d) 2.5-15 mol. % of CF2?CFO[CF2CF(CF3)O]nCF3 (n: 2-6), (e) 0.1-2 mol. % of CF2?CFO[CF2CF(CF3)O]mCF2CF3 (m: 2-6), and (f) 0.1-2 mol. % of RfX (Rf: an unsaturated fluorohydrocarbon group having 2-8 carbon atoms, which can contain at least one ether bond, X: bromine or iodine), can provide a fluorine-containing elastomer composition, which comprises 100 parts by weight of the fluorine-containing elastomer, 0.1-10 parts by weight of an organic peroxide, 0.1-10 parts by weight of a polyfunctional unsaturated compound, and at least 2 parts by weight of an acid acceptor. The composition can give vulcanizates having a distinguished elongation at break at high temperatures such as 100° C., and distinguished compression set characteristics at low temperatures such as 0° C.

Abstract: A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer.

Abstract: A fluorine-containing boronic acid ester compound (R1: a linear or branched divalent aliphatic hydrocarbon group having 2 to 10 carbon atom, m: 1 to 5, and n: 3 to 7) having a low melting point is produced by reacting a 3,5-dihalogeno fluorine-containing phenol derivative with a dialkoxyborane The fluorine-containing boronic acid ester compound is highly soluble in organic solvents and has a low melting point. The fluorine-containing boronic acid ester compound can suitably be used as a starting material for the production of conjugated polymer materials or as a curing agent for elastomeric polymer materials.

Abstract: A fluorine-containing polyether compound having the following general formula: (where R1 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a phenyl group; X is a bromine atom or an iodine atom; l and m each are independently an integer of 10 or more; and l+m is 30-200) can be produced by reaction of a fluorine-containing dicarboxylic acid fluoride compound having the following general formula: (where l and m each are independently an integer of 10 or more, and l+m is 30-200) with an aromatic amine compound having the following general formula: [where R1 is a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, or a phenyl group, R2 is a hydrogen atom or a group represented by the general formula —SiR3R4R5 (where R3, R4 and R5 each are independently an alkyl group having 1 to 10 carbon atoms or a phenyl group); and X is a bromine atom or an iodine atom] preferably in the presence of pyridine or a tertiary amine compound such as triethylamine, etc.

Abstract: A fluorinated dicarbonyl fluoride FOCCF(CF3)[OCF2CF(CF3)]lOCF2CF2O[CF(CF3)CF2O]mCF(CF3)COF (l+m is 30-130) is reacted with an aromatic amine XC6H4NHR1 (R1 is H, alkyl, or phenyl and X is I or Br) to obtain a fluorinated polyether compound of the following formula. The compound obtained is mixed with an aromatic boric ester, an organopalladium compound, and a basic inorganic or organic compound (and organophosphorus compound) to form a curable fluorinated polyether composition. This curable fluorinated polyether composition has satisfactory processability including moderate flowability at room temperature. It is applicable to various molding techniques including injection molding and RIM.

Abstract: A method for detecting a touch position includes integrating a readout current detected at a sensing part to generate an integrated readout voltage, converting the integrated readout voltage into a digital converted readout voltage data and compensating a variation of the digital converted readout voltage data to determine whether the sensing part is touched.

Abstract: A fluorine-containing elastomer having a copolymer composition, which comprises (a) 50-85 mol. % of vinylidene fluoride, (b) 0-25 mol. % of tetrafluoroethylene, (c) 7-20 mol. % of perfluoro(methyl vinyl ether), (d) 2.5-15 mol. % of CF2?CFO[CF2CF(CF3)O]nCF3 (n: 2-6), (e) 0.1-2 mol. % of CF2?CFO[CF2CF(CF3)O]mCF2CF3 (m: 2-6), and (f) 0.1-2 mol. % of RfX (Rf: an unsaturated fluorohydrocarbon group having 2-8 carbon atoms, which can contain at least one ether bond, X: bromine or iodine), can provide a fluorine-containing elastomer composition, which comprises 100 parts by weight of the fluorine-containing elastomer, 0.1-10 parts by weight of an organic peroxide, 0.1-10 parts by weight of a polyfunctional unsaturated compound, and at least 2 parts by weight of an acid acceptor. The composition can give vulcanizates having a distinguished elongation at break at high temperatures such as 100° C., and distinguished compression set characteristics at low temperatures such as 0° C.

Abstract: A sealed terminal device for a motor-driven compressor has an electrically insulating terminal holder (12) to be attached to the housing wall (2a) of the motor-driven compressor, a plurality of sealed terminals (18) held in the terminal holder (12), for penetrating the housing wall (2a) with play to the housing wall (2a), and a groove (40) or cavity (38) formed in the terminal holder (12) to increase a creepage distance for insulation between the sealed terminals.

Abstract: A method by which generation of leak current can be suppressed and also a fine element can be formed by performing element isolation at a temperature at which a glass substrate can be used is provided. The method includes a first step of forming a base film over a glass substrate; a second step of forming a semiconductor film over the base film; a third step of forming, over the semiconductor film, a film preventing oxidation or nitridation of the semiconductor film into a predetermined pattern; and a fourth step of performing element isolation by radical oxidation or radical nitridation of a region of the semiconductor film, which is not covered with the predetermined pattern, at a temperature of the glass substrate lower than a strain point thereof by 100° C. or more, where radical oxidation or radical nitridation is performed over a semiconductor film placed apart from a plasma generation region, in a plasma treatment chamber with an electron temperature within the range of 0.5 to 1.

Abstract: An energization bolt (102), which includes an input portion (102a) to be connected to a motor (40), an intermediate portion (102b) contiguous to the input portion and positioned in an insertion hole (23d) formed in a housing (20), and an output portion (102c) contiguous to the intermediate portion and to be connected to a drive circuit (98), and energizes between the drive circuit and the motor, and a seal member (100), which surrounds the intermediate portion, is sandwiched and supported by the input portion side and the output portion side, and is fastened to the housing, are included.

Abstract: Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is required to be shorter. However, since a glass substrate has large deflection, a gate electrode cannot have been etched to have a gate length short enough to be used for a CPU. According to the invention, a conductive film is formed over a crystalline semiconductor film formed over a glass substrate, a mask is formed over the conductive film, and the conductive film is etched by using the mask; thus, a thin film transistor with a gate length of 1.0 ?m or less is formed. In particular, the crystalline semiconductor film is formed by crystallizing an amorphous semiconductor film formed over a glass substrate by laser irradiation.

Abstract: An inverter-integrated or an inverter-separated electric compressor has a control device. The control device estimates a compressor suction pressure based on the temperature of the power element of the inverter, or directly measures the compressor suction pressure by a sensor, or estimates the compressor suction pressure based on a compressor suction temperature or on a compressor housing temperature. Further, the control device calculates a motor torque based on a motor rotational speed, a motor phase current, and a motor phase voltage, estimates a compressor discharge pressure based on the compressor suction pressure and the motor torque, and estimates a compressor discharge temperature based on the compressor suction pressure and the compressor discharge pressure. An electric compressor having a discharge temperature detection means in place of a conventional thermal protector can be realized.

Abstract: The invention is related to a construct comprising a hepatitis C virus (HCV) nucleic acid sequence that comprises from 5? to 3? on the positive-sense nucleic acid a 5? untranslated region (UTR), a full-length open reading frame (ORF) encoding an HCV polyprotein whose cleavage products form functional components of HCV virus particles and RNA replication machinery, and a 3? untranslated region (UTR), said sequence being infectious, and, additionally, a ribozyme pair positioned to generate the 5? and 3? ends of said sequence when cleaved, and related methods of making and methods of using.