Abstract: A laser oscillator includes a blower for blowing laser gas to discharge tubes; a gas circulation path for connecting discharge tubes and a blower; a gear chamber pressure detector for detecting the pressure of the gear chamber disposed in the blower; and an alarm part for issuing an alarm when the pressure detected in the gear chamber pressure detector is higher than a predetermined pressure. The predetermined pressure is set based on the average value of the pressure on the laser gas inlet side and the pressure on the laser gas outlet side of the blower. This configuration can prevent the entry of the oil mist generated from the blower into the gas circulation path and an increase in the gas consumption, while maintaining stable laser output for an extended period of time without increasing the running cost.

Abstract: A method for manufacturing a semiconductor device including a cell region and a peripheral region formed outside the cell region, comprising the steps of (a) providing a semiconductor substrate including a first epitaxial layer of a first conductivity type formed over a main surface thereof, (b) doping a lower band gap impurity for making the band gap smaller than the band gap of the first epitaxial layer before doping into the first epitaxial layer in the cell region, and thereby forming a lower band gap region, (c) after the step (b), forming a plurality of first column regions of a second conductivity type which is the opposite conductivity type to the first conductivity type in such a manner as to be separated from one another in the first epitaxial layer extending from the cell region to the peripheral region, and (d) after the step (c), forming a second epitaxial layer.

Abstract: A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region.

Abstract: A conventional gas laser oscillation apparatus cannot appropriately deal with an amount of laser gas introduced greater than normal use and can generate a turbulent flow around the total reflective mirror and the partial reflective mirror. This causes unstable discharge, resulting in unstable output of laser beams. The gas laser oscillation apparatus of the present disclosure has a laser oscillator, a first laser-gas inlet, a laser-gas outlet, a first laser-gas introducing port, a laser-gas circulation passage, and a second laser-gas introducing port. Disposed between a first discharge tube and any one of the total reflective mirror and a partial reflective mirror, the first laser-gas introducing port introduces laser gas into the laser oscillator. Disposed in the laser-gas circulation passage, the second laser-gas introducing port introduces laser gas into the laser-gas circulation passage. A laser-gas introducing section is connected to the first and the second laser-gas introducing ports.

Abstract: A manufacturing method of a power MOSFET employs a hard mask film over a portion of the wafer surface as a polishing stopper, between two successive polishing steps. After embedded epitaxial growth is performed in a state where a hard mask film for forming trenches is present in at least a scribe region of a wafer, primary polishing is performed by using the hard mask film as a stopper, and secondary polishing is then performed after the hard mask film is removed.

Abstract: A disturbance suppressing system is incorporated in a servo control apparatus. In the disturbance suppressing system, a component e introduced in an output of a target plant due to a disturbance estimate error is amplified in a disturbance suppressing controller having a frequency characteristic corresponding to a magnitude of a plant error, which is a difference in transfer characteristics between the target plant and the plant model, and the amplified component e is fed back to a control input.

Abstract: A tandem control method is applied to a position control apparatus. The tandem control method controls one object to be controlled by individually driving a first driving shaft and a second driving shaft. A speed difference between the first driving shaft and the object to be controlled is amplified and added to a torque command value of the first driving shaft. A speed difference between the second driving shaft and the object to be controlled is amplified and added to a torque command value of the second driving shaft.

Abstract: A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region.

Abstract: The reliability of a semiconductor device including a power semiconductor element is improved. The basic idea in embodiments is to make the band gap of a cell region smaller than the band gap of a peripheral region. Specifically, a lower band gap region having a smaller band gap than the band gap of an epitaxial layer is formed in the cell region. In addition, a higher band gap region having a larger band gap than the band gap of the epitaxial layer is formed in the peripheral region.

Abstract: A manufacturing method of a power MOSFET employs a hard mask film over a portion of the wafer surface as a polishing stopper, between two successive polishing steps. After embedded epitaxial growth is performed in a state where a hard mask film for forming trenches is present in at least a scribe region of a wafer, primary polishing is performed by using the hard mask film as a stopper, and secondary polishing is then performed after the hard mask film is removed.

Abstract: To provide a semiconductor device including a power semiconductor element having improved reliability. The semiconductor device has a cell region and a peripheral region formed outside the cell region. The n type impurity concentration of n type column regions in the cell region is made higher than that of n type column regions comprised of an epitaxial layer in the peripheral region. Further, a charge balance is kept in each of the cell region and the peripheral region and each total electric charge is set so that a total electric charge of first p type column regions and a total electric charge of n type column regions in the cell region become larger than a total electric charge of third p type column regions and n type column regions comprised of an epitaxial layer in the peripheral region, respectively.

Abstract: A position controller sets a variable friction compensation value which varies in accordance with a change in sliding characteristics by providing a variable friction compensation value calculation unit that includes a sliding torque normalization calculation unit that normalizes a sliding torque at a predefined speed; a compensation value amplifying ratio calculation unit that calculates a compensation value amplifying ratio based on the sliding torque at the normalized speed; and multipliers.

Abstract: A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region.

Abstract: A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region.

Abstract: The reliability of a semiconductor device including a power semiconductor element is improved. The basic idea in embodiments is to make the band gap of a cell region smaller than the band gap of a peripheral region. Specifically, a lower band gap region having a smaller band gap than the band gap of an epitaxial layer is formed in the cell region. In addition, a higher band gap region having a larger band gap than the band gap of the epitaxial layer is formed in the peripheral region.

Abstract: When forming a super junction by the embedded epitaxial method, adjusting a taper angle of dry etching to form an inclined column is generally performed in trench forming etching, in order to prevent a reduction in breakdown voltage due to fluctuations in concentration in an embedded epitaxial layer. However, according to the examination by the present inventors, it has been made clear that such a method makes design more and more difficult in response to the higher breakdown voltage. In the present invention, the concentration in an intermediate substrate epitaxy column area in each substrate epitaxy column area configuring a super junction is made more than that in other areas within the substrate epitaxy column area, in a vertical power MOSFET having the super junction by the embedded epitaxial method.

Abstract: A position control apparatus is provided that can perform accurate nonlinear compensation control immediately after the apparatus is activated. At a time of acceleration, a signal amplification ratio is calculated and designated for each signal vector element based on information related to acceleration/deceleration at a starting time and the structure of a signal vector that is determined for a target plant, and as a result, a signal vector for which the strength of linear independence is increased is generated. Because the strength of the linear independence condition of the signal vector is increased, the speed of convergence of identification for a low-frequency disturbance element, such as a gravitational torque or a sliding-mode load torque, can be increased.

Abstract: In the manufacturing steps of a super-junction power MOSFET having a drift region having a super junction structure, after the super junction structure is formed, introduction of a body region and the like and heat treatment related thereto are typically performed. However, in the process thereof, a dopant in each of P-type column regions and the like included in the super junction structure is diffused to result in a scattered dopant profile. This causes problems such as degradation of a breakdown voltage when a reverse bias voltage is applied between a drain and a source and an increase in ON resistance. According to the present invention, in a method of manufacturing a silicon-based vertical planar power MOSFET, a body region forming a channel region is formed by selective epitaxial growth.

Abstract: A position controller sets a variable friction compensation value which varies in accordance with a change in sliding characteristics by providing a variable friction compensation value calculation unit that includes a sliding torque normalization calculation unit that normalizes a sliding torque at a predefined speed; a compensation value amplifying ratio calculation unit that calculates a compensation value amplifying ratio based on the sliding torque at the normalized speed; and multipliers.