Abstract: A bending device to bend leads of a component one by one in the same direction at different timings. The bending device including a support block below the component that is movable in a vertical direction; a pair of support members fixed to the support block, the pair of support members contacting and supporting the leads of the component from below; a pair of clamp arms swingably held to the support block, the pair of clamp arms contacting and clamping the leads of the component from above; and a pair of bending rollers arranged above the leads of the component that bend the leads at the different timings.

Abstract: A radiation detection apparatus according to the present invention includes: a direct-detection-type radiation detector provided in plurality and configured to be arranged in a planar manner; and a semiconductor integrated circuit configured to perform a control operation of the radiation detector or processing on a signal from the radiation detector, wherein the semiconductor integrated circuit is disposed on a back side of the light-receiving surface so as to be included within an area of the radiation detector in a plan view viewed from a side of a light-receiving surface of the radiation detector.

Abstract: A biodegradable resin composition may include a polyester resin and one or more nitrogen compounds of formula (I): R, R?, and R?? each independently being H or a monovalent organic group which may have a substituent group which does not form a ring structure with each other, optionally in salt form (excluding (RS)-1-methyl-2-nitro-3-[(3-tetrahydrofuryl)methyl]guanidine, and/or compounds of formula NH2—CHR—COOH, with R being H or a monovalent aliphatic hydrocarbon group, and phenylalanine). The polyester resin may be a resin having dicarboxylic acid unit and a diol unit. The content of the compound of formula (I) may be in a range of from 0.1 to 70 wt. %. The concentration of nitrogen atom in the compound of formula (I) may be 6 wt. % or more. The molecular weight of the compound of formula (I) may be less than 10000.

Abstract: Provided is a resin containing a polybutylene succinate sebacate, characterized in that a content of an alkali metal is 0.001 mass ppm or more and 6.0 mass ppm or less. According to the present invention, it is possible to provide a polyester resin, a resin composition and a shaped object which achieve both biodegradability in seawater and hydrolysis resistance, which are contradictory properties, at high level.

Abstract: A can lid made of a resin laminate steel sheet for a resin-metal composite container, includes: a top sheet portion; and a curved portion located at an outer periphery of the top sheet portion, in which the resin laminate steel sheet includes a steel sheet, a thermoplastic polyester-based resin layer provided at a first surface of the steel sheet, a modified polypropylene-based resin layer provided at a second surface of the steel sheet, a polypropylene-based resin layer, and an ethylene-propylene copolymer resin layer, a melting point of the ethylene-propylene copolymer resin layer is 135° C. or higher and 150° C. or lower, a melting point of the thermoplastic polyester-based resin layer is higher than a melting point of the polypropylene-based resin layer by 40° C. or more, and a range of a proportion of the ethylene component in the ethylene-propylene copolymer in the ethylene-propylene copolymer resin layer is 1.0 mass % or more and 45.0 mass % or less.

Abstract: A hot stamped component, includes: a base material; and a Zn-based plating layer provided in contact with the base material as an upper layer of the base material and containing Zn and Ni. A region of the Zn-based plating layer on a base material side is a Fe—Zn solid solution containing Ni, and two or more twins exist in 10 crystal grains of the Fe—Zn solid solution containing Ni adjacent to an interface between the base material and the Zn-based plating layer.

Abstract: According to one embodiment, a semiconductor device includes a plurality of stacked semiconductor chips each of which has a first surface having an electrode formed thereon, a plurality of wires each of which has one end portion connected to each of the electrodes of the plurality of semiconductor chips and extends in a stacking direction of the semiconductor chips, a sealing resin that covers the plurality of semiconductor chips, has a second surface having recesses formed therein, and is formed so that the other end portions of the plurality of wires and the recesses overlap each other when viewed from the stacking direction, and a plurality of terminals that is provided so as to fill the recesses, each of which has one end portion connected to the other end portion of each of the plurality of wires and has the other end portion exposed from the sealing resin.

Abstract: A light emitting device in which a light emitting element layer including a plurality of light emitting elements, a first substrate including at least a part of each of a plurality of unit circuits respectively connected to the plurality of light emitting elements, and a second substrate including at least a part of a control circuit configured to control the plurality of unit circuits are stacked. The device includes a first protective circuit arranged in the first substrate, and configured to protect the plurality of unit circuits, wherein a maximum voltage in the first substrate is higher than a maximum voltage in the second substrate.

Abstract: A light emitting device in which a first substrate including a first semiconductor substrate and a first wiring layer, a second substrate including a second semiconductor substrate and a second wiring layer, and a light emitting layer are stacked. The light emitting layer is arranged between a structure including the first substrate and the second substrate and a predetermined virtual plane. At least one of the first wiring layer and the second wiring layer includes a pad electrode. The light emitting layer and the structure include an aperture that exposes the pad electrode to the virtual plane.

Abstract: An imaging device includes: a first pad portion that is connected to a voltage supply line in an aperture pixel region, and to which a reference voltage from outside of the semiconductor substrate is supplied; and a second pad portion that is connected to the voltage supply line in the light-shielded pixel region, and to which the reference voltage from outside of the semiconductor substrate is supplied, the second pad portion being separated from the first pad portion.

Abstract: The purpose of the present invention is to provide a, polyimide film having high transparency and improved bending resistance against multiple times of bending, and a varnish capable of providing such a polyimide film. The varnish according to the present invention contains a polymer (?) and a solvent (?). The polymer (?) is polyimide or a polyimide precursor. The varnish further contains a typical metal element having an atomic weight of 26-201 except alkali metals and alkaline earth metals, or at least one metal element among transition metal elements having an atomic weight of 26-201 or less. At least one of the metal elements contained in the varnish is present in an amount of 0.05-500 ppm relative to the polymer (?).

Abstract: A heat sealed lid includes: a resin laminate aluminum foil; and a first seamed side frame portion and a second seamed side frame portion formed of a resin film laminate metal sheet, in which the resin film laminate metal sheet includes a metal sheet, a laminate film formed on one surface of the metal sheet, and a second resin film formed on the other surface of the metal sheet and containing a thermoplastic polyester resin, the laminate film includes an adhesion layer containing a polypropylene-based resin and a polyethylene-based resin and a base layer containing a modified polypropylene-based resin, an amount of the polyethylene-based resin in the adhesion layer is 1.0 mass % or more and 45.0 mass % or less of the resins of the adhesion layer, the melting point of the second resin film is higher than the melting point of the adhesion layer by 40° C. or more and is higher than the heating temperature of a heat sealing tool, the thickness of the adhesion layer is 1.0 ?m or more and 15.

Abstract: This polyethylene furanoate has an intrinsic viscosity of 0.95 - 1.50 dl/g. Said intrinsic viscosity is measured (the Huggins constant is defined as 0.32) at 30° C. by using an Ubbelohde viscometer, after dissolving 0.25 g of the polyethylene furanoate in 50 ml of a solvent mixture of phenol/1,1,2,2-tetrachloroethane = 50/50 (weight ratio).

Abstract: First substrate including display region having pixels and second substrate including driving circuit are stacked. Maximum voltage supplied to portion of the driving circuit arranged inside outer edge of the display region in plan view is lower than that supplied to the display region. The driving circuit includes processing circuit region. The outer edge of the display region is located inside outer edge of the processing circuit region in the plan view. Maximum voltage supplied to the processing circuit region is lower than that supplied to the display region. The maximum voltage supplied to the display region is power supply voltage supplied to first power supply terminal for the pixels. The maximum voltage supplied to the processing circuit region is power supply voltage supplied to second power supply terminal for the processing circuit region.

Abstract: A hot stamped component, includes: a base material; and a Zn-based plating layer provided in contact with the base material as an upper layer of the base material and containing Zn and Ni. A region of the Zn-based plating layer on a base material side is a Fe—Zn solid solution containing Ni, and two or more twins exist in 10 crystal grains of the Fe—Zn solid solution containing Ni adjacent to an interface between the base material and the Zn-based plating layer.

Abstract: A fuel cell system includes a reformer, a fuel cell, a desulfurizer, a recirculation passage through which the reformer communicates with the desulfurizer such that a part of the anode gas generated in the reformer flows into the desulfurizer, and an orifice member provided on the recirculation passage. The orifice member or at least a part of an inner wall of a portion that constitutes an upstream side from the orifice member in the recirculation passage is made of a material containing a material having an antifungal action.

Abstract: A signal processing circuit includes a reference signal line, a processing circuit that processes a potential of the reference signal line and a potential of an input signal, a first reference voltage supplying circuit that outputs a predetermined potential to one end of the reference signal line, and a second reference voltage supplying circuit that outputs a predetermined potential to the other end of the reference signal line.

Abstract: An on-board device includes a processor. The processor is configured to operate as an acquisition unit configured to acquire data from a sensor mounted on a vehicle, a human-machine-interface (HMI) unit configured to perform a process for exerting a human-machine-interface (HMI) function, and a data management unit configured to make determination on a category of the data delivered from the acquisition unit and deliver, to the HMI unit, data in a first category that does not contain data that is not desired to be delivered to the HMI unit. The HMI unit is configured to perform the process for exerting the HMI function based on the data delivered from the data management unit.

Abstract: This high-strength cold-rolled steel sheet has a predetermined chemical composition, wherein a microstructure at a ¼ position of a sheet thickness from a surface includes predetermined ranges of volume percentages of tempered martensite, residual austenite, ferrite and bainite, and martensite, wherein a microstructure at a position 25 ?m from the surface includes, predetermined ranges of volume percentage of ferrite and bainite, and martensite and tempered martensite, wherein in the position 25 ?m from the surface, an average grain size of the martensite and the tempered martensite is 5.0 ?m or less, a tensile strength is 1,310 MPa or more, and a uniform elongation is 5.0% or more, and R/t is 5.0 or less, the R/t being a ratio of a limit bend radius R in 90° V-bending to a sheet thickness t.

Abstract: A semiconductor device includes a support, a semiconductor chip, a first insulating film, and a wiring layer. The support comprises a first electrode. The semiconductor chip has a first surface facing the support and a second surface facing away from the support with a second electrode thereon. The first insulating film has a first portion in contact with the first surface and a second portion in contact with at least one side surface of the semiconductor chip. The wiring layer connects the first electrode to the second electrode. The wiring layer is on the support, the second surface of the semiconductor chip, a side surface of the second portion of the first insulating film.