Abstract: A method for purifying a modified major mite allergen obtained by the genetic recombination technique and a purified modified major mite allergen obtained by said method for purification are provided.

Abstract: A method for purifying a modified major mite allergen obtained by the genetic recombination technique and a purified modified major mite allergen obtained by said method for purification are provided.

Abstract: A heterologous protein free from an inducer and a method for producing said protein are provided. A method for producing a heterologous protein which comprises the step of optionally culturing at low temperature recombinant E. coli cells expressing a heterologous protein under control of a promoter capable of inducing expression through temperature shift and then culturing at high temperature said recombinant E. coli cells in the absence of an inducer to thereby allow for expression of said heterologous protein, or the step of culturing at high temperature said recombinant E. coli cells to thereby simultaneously allow for both cell proliferation and expression of said heterologous protein, and the heterologous protein obtained by said method that is free from an inducer. Such heterologous protein may include a major mite allergen, a secretary macrophage toxin from Actinobacillus pleuropneumoniae and a surface protective antigen (SpaA) of Erysipelothrix rhusiopathiae.

Abstract: The present invention relates to a method for purifying a calcium ion-binding protein by cation exchange chromatography. The present invention provide a method for isolating and purifying a calcium ion-binding protein in a simple and efficient manner from a liquid sample containing a calcium ion-binding protein and contaminants without any pretreatment such as addition of a chelating agent. More specifically, the present invention relates to a method for purifying a calcium ion-binding protein which comprises contacting said protein with a cation exchange carrier in the presence of calcium ions to let the said protein be adsorbed to the carrier, and after washing, eluting said protein, and to a calcium ion-binding protein having substantially no contaminants obtained by the method of the present invention.

Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 ?m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.

Abstract: The present invention relates to a method for purifying a calcium ion-binding protein by cation exchange chromatography. The present invention provide a method for isolating and purifying a calcium ion-binding protein in a simple and efficient manner from a liquid sample containing a calcium ion-binding protein and contaminants without any pretreatment such as addition of a chelating agent. More specifically, the present invention relates to a method for purifying a calcium ion-binding protein which comprises contacting said protein with a cation exchange carrier in the presence of calcium ions to let the said protein be adsorbed to the carrier, and after washing, eluting said protein, and to a calcium ion-binding protein having substantially no contaminants obtained by the method of the present invention.

Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs and longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.

Abstract: The present invention relates to a method for purifying a calcium ion-binding protein by cation exchange chromatography. The present invention provide a method for isolating and purifying a calcium ion-binding protein in a simple and efficient manner from a liquid sample containing a calcium ion-binding protein and contaminants without any pretreatment such as addition of a chelating agent. More specifically, the present invention relates to a method for purifying a calcium ion-binding protein which comprises contacting said protein with a cation exchange carrier in the presence of calcium ions to let the said protein be adsorbed to the carrier, and after washing, eluting said protein, and to a calcium ion-binding protein having substantially no contaminants obtained by the method of the present invention.

Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.

Abstract: A semiconductor laser module having a semiconductor laser device, a pigtail fiber and optical lens disposed to optically couple the semiconductor laser device to the pigtail fiber, a method of manufacturing the semiconductor laser module, and a Raman amplifier. The pigtail fiber is a polarization maintaining optical fiber with a polarization maintaining axis shifted by a predetermined angle with respect to a polarization direction of a laser beam emitted from the semiconductor laser device.

Abstract: The present invention provides a semiconductor laser module emitting a laser beam from a resonance section having a semiconductor laser device and a diffraction grating therein, and the semiconductor laser device is set in the multimode oscillation state, and by controlling a reflectivity spectrum form or a reflectivity of the diffraction grating, a laser beam spectrum emitted from the resonance section is arranged so that a plurality of longitudinal modes may be included within −3 dB from an optical amplitude of a main peak as a reference in a prespecified wavelength band widths including the main peak.

Abstract: A semiconductor laser module 1 comprising a semiconductor laser device 2 having an emitting surface 2a from which excited light is emitted and a reflecting surface 2b opposite to the emitting surface, and an optical feedback medium 3 for feeding most of optical power emitted from the emitting surface 2a of the semiconductor laser device 2 back to the semiconductor laser device 2 by coupling means 4 and emitting part of the optical power. The semiconductor laser device 2 has a low reflectance multilayer coating 2c formed on the emitting surface 2a and having a reflectance of 10−4 to 10%. The low reflectance multilayer coating 2c has a reflection spectrum in the form of a curve having a maximum value at the central wavelength of reflection and minimum values on both sides of the central wavelength of reflection.

Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs and longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.