Patents by Inventor Satoshi Koyanagi

Satoshi Koyanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7667009
    Abstract: A method for purifying a modified major mite allergen obtained by the genetic recombination technique and a purified modified major mite allergen obtained by said method for purification are provided.
    Type: Grant
    Filed: April 14, 2004
    Date of Patent: February 23, 2010
    Assignee: Juridical Foundation the Chemo-Sero-Therapeutic Research Institute
    Inventors: Satoshi Koyanagi, Kenjiro Kawatsu, Toshio Murakami, Yoshinobu Miyatsu, Toshihiro Maeda, Hiroshi Mizokami
  • Publication number: 20080113424
    Abstract: A method for purifying a modified major mite allergen obtained by the genetic recombination technique and a purified modified major mite allergen obtained by said method for purification are provided.
    Type: Application
    Filed: April 14, 2004
    Publication date: May 15, 2008
    Applicant: Juridicical Foundation the Chemo-Sero-Therapeutic Research Institute
    Inventors: Satoshi Koyanagi, Kenjiro Kawatsu, Toshio Murakami, Yoshinobu Miyatsu, Toshihiro Maeda, Hiroshi Mizokami
  • Publication number: 20070065906
    Abstract: A heterologous protein free from an inducer and a method for producing said protein are provided. A method for producing a heterologous protein which comprises the step of optionally culturing at low temperature recombinant E. coli cells expressing a heterologous protein under control of a promoter capable of inducing expression through temperature shift and then culturing at high temperature said recombinant E. coli cells in the absence of an inducer to thereby allow for expression of said heterologous protein, or the step of culturing at high temperature said recombinant E. coli cells to thereby simultaneously allow for both cell proliferation and expression of said heterologous protein, and the heterologous protein obtained by said method that is free from an inducer. Such heterologous protein may include a major mite allergen, a secretary macrophage toxin from Actinobacillus pleuropneumoniae and a surface protective antigen (SpaA) of Erysipelothrix rhusiopathiae.
    Type: Application
    Filed: February 20, 2004
    Publication date: March 22, 2007
    Applicant: JURIDICAL FOUNDATION the CHEMO-SERO-THERAPEUTIC RESEARCH INSTITUTE
    Inventors: Satoshi Koyanagi, Keishin Sugawara, Yoshinobu Miyatsu, Toshio Murakami, Toshihiro Maeda, Hiroshi Mizokami
  • Patent number: 6869934
    Abstract: The present invention relates to a method for purifying a calcium ion-binding protein by cation exchange chromatography. The present invention provide a method for isolating and purifying a calcium ion-binding protein in a simple and efficient manner from a liquid sample containing a calcium ion-binding protein and contaminants without any pretreatment such as addition of a chelating agent. More specifically, the present invention relates to a method for purifying a calcium ion-binding protein which comprises contacting said protein with a cation exchange carrier in the presence of calcium ions to let the said protein be adsorbed to the carrier, and after washing, eluting said protein, and to a calcium ion-binding protein having substantially no contaminants obtained by the method of the present invention.
    Type: Grant
    Filed: July 18, 2001
    Date of Patent: March 22, 2005
    Assignees: Juridical Foundation The Chemo-Sero-Therapeutic Research Institute, Kowa Company, Ltd.
    Inventors: Hiroshi Mizokami, Shinichi Furukawa, Keishin Sugawara, Tatsufumi Onchi, Kazuhiro Komatsu, Satoshi Koyanagi, Hideo Yoshizaki
  • Patent number: 6870871
    Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 ?m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.
    Type: Grant
    Filed: October 31, 2001
    Date of Patent: March 22, 2005
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Junji Yoshida, Naoki Tsukiji, Takeshi Aikiyo, Satoshi Koyanagi
  • Publication number: 20050059805
    Abstract: The present invention relates to a method for purifying a calcium ion-binding protein by cation exchange chromatography. The present invention provide a method for isolating and purifying a calcium ion-binding protein in a simple and efficient manner from a liquid sample containing a calcium ion-binding protein and contaminants without any pretreatment such as addition of a chelating agent. More specifically, the present invention relates to a method for purifying a calcium ion-binding protein which comprises contacting said protein with a cation exchange carrier in the presence of calcium ions to let the said protein be adsorbed to the carrier, and after washing, eluting said protein, and to a calcium ion-binding protein having substantially no contaminants obtained by the method of the present invention.
    Type: Application
    Filed: September 21, 2004
    Publication date: March 17, 2005
    Inventors: Hiroshi Mizokami, Shinichi Furukawa, Keishin Sugawara, Tatsufumi Onchi, Kazuhiro Komatsu, Satoshi Koyanagi, Hideo Yoshizaki
  • Patent number: 6614822
    Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs and longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: September 2, 2003
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Junji Yoshida, Naoki Tsukiji, Takeshi Aikiyo, Satoshi Koyanagi
  • Publication number: 20020169294
    Abstract: The present invention relates to a method for purifying a calcium ion-binding protein by cation exchange chromatography. The present invention provide a method for isolating and purifying a calcium ion-binding protein in a simple and efficient manner from a liquid sample containing a calcium ion-binding protein and contaminants without any pretreatment such as addition of a chelating agent. More specifically, the present invention relates to a method for purifying a calcium ion-binding protein which comprises contacting said protein with a cation exchange carrier in the presence of calcium ions to let the said protein be adsorbed to the carrier, and after washing, eluting said protein, and to a calcium ion-binding protein having substantially no contaminants obtained by the method of the present invention.
    Type: Application
    Filed: March 21, 2002
    Publication date: November 14, 2002
    Inventors: Hiroshi Mizokami, Shinichi Furukawa, Keishin Sugawara, Tatsufumi Onchi, Kazuhiro Komatsu, Satoshi Koyanagi, Hideo Yoshizaki
  • Publication number: 20020136254
    Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.
    Type: Application
    Filed: October 31, 2001
    Publication date: September 26, 2002
    Inventors: Junji Yoshida, Naoki Tsukiji, Takeshi Aikiyo, Satoshi Koyanagi
  • Publication number: 20020075913
    Abstract: A semiconductor laser module having a semiconductor laser device, a pigtail fiber and optical lens disposed to optically couple the semiconductor laser device to the pigtail fiber, a method of manufacturing the semiconductor laser module, and a Raman amplifier. The pigtail fiber is a polarization maintaining optical fiber with a polarization maintaining axis shifted by a predetermined angle with respect to a polarization direction of a laser beam emitted from the semiconductor laser device.
    Type: Application
    Filed: October 26, 2001
    Publication date: June 20, 2002
    Applicant: THE FURUKAWA ELECTRIC CO., LTD.
    Inventor: Satoshi Koyanagi
  • Publication number: 20020075914
    Abstract: The present invention provides a semiconductor laser module emitting a laser beam from a resonance section having a semiconductor laser device and a diffraction grating therein, and the semiconductor laser device is set in the multimode oscillation state, and by controlling a reflectivity spectrum form or a reflectivity of the diffraction grating, a laser beam spectrum emitted from the resonance section is arranged so that a plurality of longitudinal modes may be included within −3 dB from an optical amplitude of a main peak as a reference in a prespecified wavelength band widths including the main peak.
    Type: Application
    Filed: October 26, 2001
    Publication date: June 20, 2002
    Applicant: THE FURUKAWA ELECTRIC CO., LTD.
    Inventor: Satoshi Koyanagi
  • Patent number: 6343088
    Abstract: A semiconductor laser module 1 comprising a semiconductor laser device 2 having an emitting surface 2a from which excited light is emitted and a reflecting surface 2b opposite to the emitting surface, and an optical feedback medium 3 for feeding most of optical power emitted from the emitting surface 2a of the semiconductor laser device 2 back to the semiconductor laser device 2 by coupling means 4 and emitting part of the optical power. The semiconductor laser device 2 has a low reflectance multilayer coating 2c formed on the emitting surface 2a and having a reflectance of 10−4 to 10%. The low reflectance multilayer coating 2c has a reflection spectrum in the form of a curve having a maximum value at the central wavelength of reflection and minimum values on both sides of the central wavelength of reflection.
    Type: Grant
    Filed: September 15, 1999
    Date of Patent: January 29, 2002
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Akira Mugino, Satoshi Koyanagi, Takeo Shimizu
  • Publication number: 20010048702
    Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 &mgr;m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs and longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.
    Type: Application
    Filed: February 2, 2001
    Publication date: December 6, 2001
    Inventors: Junji Yoshida, Naoki Tsukiji, Takeshi Aikiyo, Satoshi Koyanagi