Patents by Inventor Satoshi Sakai

Satoshi Sakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130112669
    Abstract: The present invention provides a heat treatment apparatus which can reduce a surface roughing of a processed substrate while keeping a heat efficiency high, even in the case of heating a sample to be heated to 1200° C. or higher. The present invention is a heat treatment apparatus carrying out a heat treatment of a sample to be heated, wherein a plasma generated by a glow electric discharge is used as a heating source, and the sample to be heated is indirectly heated.
    Type: Application
    Filed: January 20, 2012
    Publication date: May 9, 2013
    Inventors: Takashi UEMURA, Kenetsu Yokogawa, Masatoshi Miyake, Masaru Izawa, Satoshi Sakai
  • Patent number: 8405178
    Abstract: In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.
    Type: Grant
    Filed: July 23, 2010
    Date of Patent: March 26, 2013
    Assignee: Hitachi, Ltd.
    Inventors: Shinya Sugino, Satoshi Sakai, Yusuke Nonaka, Tomohiro Saito, Tomoyasu Furukawa, Hiroyuki Hayashi
  • Patent number: 8406574
    Abstract: An image processor comprising a control unit, wherein the control unit includes an obtaining unit that obtains image data generated as a result of reading a document by a reader in which a predetermined document reading condition is set; a selecting unit that allows a user to select an use of the image data obtained by the obtaining unit out of a plurality of the uses set in advance; a processing unit that processes the image data obtained by the obtaining unit according to an image processing condition suitable for the use selected by the selecting unit; and a transferring unit that transfers the image data after being processed by the processing unit to an application suitable for the use selected by the selecting unit.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: March 26, 2013
    Assignee: PFU Limited
    Inventors: Satoshi Kubo, Satoshi Sakai, Koichi Kitagawa, Yasunori Taniguchi, Takayuki Kawanaka, Kiyoto Kosaka
  • Patent number: 8388202
    Abstract: A vehicle light can include an optical system for controlling a light distribution pattern, and the optical system is a light guide (being a lens body having an inner reflecting surface). The vehicle light can project illumination light with a low bean light distribution pattern. The vehicle light can include an LED light source and a lens body serving as a light guide. The lens body can include a light incident surface, a reflecting surface, and a light exiting surface. The LED light source can have a rearmost end light emitting point from which light beams are emitted to form a bright-dark boundary line.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: March 5, 2013
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Masafumi Ohno, Ryotaro Owada, Norikatsu Myojin, Mitsuo Yamada, Yasushi Kita, Satoshi Sakai
  • Publication number: 20130049156
    Abstract: In a region of a weak internal electric field, photocharges generated in a region deeper than the photodiode are diffused laterally to lower the sensitivity by photoelectrons flowing into adjacent pixels, etc (crosstalk). An anti-crosstalk layer is disposed in the photodiode forming portion, and between a pixel region and a peripheral circuit region. Crosstalk between a pixel and a pixel or between a pixel region and a peripheral circuit region is decreased to improve the photosensitivity.
    Type: Application
    Filed: July 12, 2012
    Publication date: February 28, 2013
    Inventors: Tomoyasu FURUKAWA, Satoshi Sakai, Yusuke Nonaka, Shinya Sugino
  • Publication number: 20130003508
    Abstract: An electronic apparatus includes a first frequency division portion that frequency-divides a clock signal by a first frequency division ratio, a second frequency division portion that frequency-divides the first clock signal which has been frequency-divided by the first frequency division portion by a second frequency division ratio, and a regulation frequency division portion that performs logical regulation of the clock signal using a second clock signal which has been frequency-divided by the second frequency division portion.
    Type: Application
    Filed: June 27, 2012
    Publication date: January 3, 2013
    Inventors: Kazuo KATO, Akira Takakura, Toshitaka Fukushima, Keisuke Tsubata, Hisao Nakamura, Tomohiro Ihashi, Yoshinori Sugai, Eriko Noguchi, Satoshi Sakai, Takanori Hasegawa
  • Publication number: 20120305081
    Abstract: A high-efficiency triple-junction thin-film photovoltaic device in which the haze ratio is high and the short-circuit current values obtained from each of the photovoltaic layers are equalized. A thin-film photovoltaic device comprises a transparent electrode layer and three silicon-based photovoltaic layers stacked in sequence on a substrate. The transparent electrode layer has at least one opening formed by an etching treatment that exposes the surface of the substrate, and the haze ratio of the transparent electrode layer relative to light of a broad wavelength region is at least 60%.
    Type: Application
    Filed: November 11, 2010
    Publication date: December 6, 2012
    Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Koichi Mizuno, Yoshiaki Takeuchi, Satoshi Sakai, Shigenori Tsuruga, Takuya Matsui, Michio Kondo, Haijun Jia
  • Patent number: 8252668
    Abstract: Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.
    Type: Grant
    Filed: August 18, 2009
    Date of Patent: August 28, 2012
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Kengo Yamaguchi, Satoshi Sakai, Yoshiaki Takeuchi
  • Publication number: 20120204396
    Abstract: A method of bending sheet metal uses a test work piece of the same thickness and material as a finished piece. The test piece is bent into an angled form having an interior angle of any size. The interior angle is measured as are the height of each exterior edge above its opposite leg and the height of the apex of the angled form. Using these measurements, the interior radius of the angled form can be calculated as can the inner and outer lengths of the legs. Using these values the depth of a neutral line, which will have the same length in a work piece whether bent or not, can be determined. Once the depth of the neutral line has been calculated, a bend deduction for the final work piece may be determined and thus the required starting length is determined for any desired interior angle or leg lengths.
    Type: Application
    Filed: February 14, 2011
    Publication date: August 16, 2012
    Inventor: Satoshi Sakai
  • Publication number: 20120203496
    Abstract: An acceleration detecting device operable in a power-saving mode, including an acceleration detecting section for detecting acceleration in a first direction and a second direction independent from the first direction. The device includes a sampling period reducing section for reducing a sampling period used for detecting the acceleration in the first direction when the magnitude of the acceleration in the first direction exceeds a predetermined value.
    Type: Application
    Filed: January 31, 2012
    Publication date: August 9, 2012
    Inventor: Satoshi SAKAI
  • Publication number: 20120152340
    Abstract: A multi junction photovoltaic device and an integrated multi junction photovoltaic device, having a two-terminal structure, in which subsequent layers can be stacked under conditions with minimal restrictions imposed by previously stacked layers. Also, processes for producing these photovoltaic devices. A plurality of photovoltaic cells having different spectral sensitivity levels are stacked such that at least the photovoltaic cells (2, 4) at the light-incident end and the opposite end have a conductive thin-film layer (5a, 5d) as the outermost layer that undergoes connection, the remaining photovoltaic cell (3) has conductive thin-film layers (5b, 5c) as the outermost layers that undergo connection, and the outermost layers are bonded via anisotropic conductive adhesive layers (6a, 6b) containing conductive microparticles within a transparent insulating material.
    Type: Application
    Filed: June 10, 2010
    Publication date: June 21, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Michio Kondo, Takashi Koida, Yoshiaki Takeuchi, Satoshi Sakai, Yasuhiro Yamauchi
  • Publication number: 20120135561
    Abstract: An object is to obtain a high-efficiency photoelectric conversion device having a crystalline silicon i-layer in a photoelectric conversion layer. Disclosed is a fabrication method for a photoelectric conversion device that includes a step of forming, on a substrate, a photoelectric conversion layer having an i-layer formed mainly of crystalline silicon. The method includes the steps of determining an upper limit of an impurity concentration in the i-layer according to the Raman ratio of the i-layer; and forming the i-layer so as to have a value equal to or less than the determined upper limit of the impurity concentration. Alternatively, an upper limit of impurity-gas concentration in a film-formation atmosphere is determined according to the Raman ratio of the i-layer, and the i-layer is formed while controlling the impurity-gas concentration so as to have a value equal to or less than the determined upper limit.
    Type: Application
    Filed: May 7, 2010
    Publication date: May 31, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Hiroomi Miyahara, Saneyuki Goya, Satoshi Sakai, Tatsuyuki Nishimiya
  • Patent number: 8184303
    Abstract: Objects are to reduce the burden on an operator and to improve fabrication efficiency. A transparent conductive film or a transparent optical film formed on a substrate W is irradiated with line illumination light by means of a line illumination device 3, line reflected light reflected at the transparent conductive film or the transparent optical film is detected with a camera, a color evaluation value of the detected reflected light is measured, and a film thickness corresponding to the measured color evaluation value is obtained using a film-thickness characteristic in which the color evaluation value is associated with the film thickness.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: May 22, 2012
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Satoshi Sakai, Yoichiro Tsumura, Masami Iida, Kohei Kawazoe
  • Publication number: 20120056745
    Abstract: The invention is intended to prevent sunburn of a user. A CPU prompts the user to perform sunburn preventing treatment after an elapse of a first period, and notifies the elapse of a second period after the elapse of the second period from the prompt.
    Type: Application
    Filed: August 31, 2011
    Publication date: March 8, 2012
    Inventors: Eriko Noguchi, Keisuke Isubata, Kazuo Kato, Yoshinori Sugai, Tomohiro Ihashi, Hisao Nakamura, Satoshi Sakai
  • Publication number: 20120057437
    Abstract: A power supply unit includes: a first power supply circuit that supplies a voltage to a load driving unit that drives a load unit; a second power supply circuit that supplies a voltage to circuits other than the load driving unit; and a control unit that switches the voltage supplied to the first power supply circuit and the voltage supplied to the second power supply circuit in accordance with properties of the load driving unit.
    Type: Application
    Filed: August 31, 2011
    Publication date: March 8, 2012
    Inventors: Kazuo Kato, Akira Takakura, Toshitaka Fukushima, Keisuke Tsubata, Hisao Nakamura, Tomohiro Ihashi, Yoshinori Sugai, Eriko Noguchi, Satoshi Sakai, Takanori Hasegawa
  • Patent number: 8129611
    Abstract: A light scattering film having the structure which guides electrical signal to a desired position and scatters incident light and the surface of which is substantially flat, and a photoelectric device using the same. The light scattering film includes a medium made of transparent conductive material and a light scatterer embedded in the medium. The light scattering film realizes conductivity and the light-scattering characteristic by single component. It is not necessary to make the texture of a surface with concavity and convexity deliberately to achieve the light-scattering characteristic. Desirably, the surface is substantially flat. When a semiconductor layer is formed on the surface, the defects are suppressed because of the flatness of the surface. The photoelectric device having the light scattering film and the semiconductor device on the surface of the film can achieve high photoelectric conversion efficiency.
    Type: Grant
    Filed: December 8, 2005
    Date of Patent: March 6, 2012
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Yasuyuki Kobayashi, Satoshi Sakai, Koji Satake
  • Publication number: 20120012168
    Abstract: A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency.
    Type: Application
    Filed: January 7, 2009
    Publication date: January 19, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Saneyuki Goya, Yasuyuki Kobayashi, Satoshi Sakai
  • Publication number: 20120006402
    Abstract: A photovoltaic device comprising an intermediate contact layer for which the reflection characteristics have been optimized.
    Type: Application
    Filed: May 6, 2010
    Publication date: January 12, 2012
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Satoshi Sakai, Yasuyuki Kobayashi
  • Publication number: 20110310317
    Abstract: A display driving circuit drives common terminals connected to display components using a scanning signal of a predetermined period and drives segment terminals using a segment signal synchronized with the scanning signal, so that the display components perform a display corresponding to the display signal from the control circuit. The common terminals and the segment terminals are able to be independently driven. At this time, the common terminals are separated into a plurality of common terminal blocks and are driven and the number of separated common terminal blocks is variable.
    Type: Application
    Filed: June 16, 2011
    Publication date: December 22, 2011
    Inventors: Kazuo Kato, Akira Takakura, Keisuke Tsubata, Hisao Nakamura, Tomohiro Ihashi, Yoshinori Sugai, Eriko Noguchi, Satoshi Sakai, Takanori Hasegawa, Shotaro Kamiyama
  • Publication number: 20110303289
    Abstract: A process for producing a photovoltaic device that suppresses variations in the photovoltaic conversion efficiency within the plane of a large surface area substrate, suppresses fluctuations in the module power output between production lots, and enables an improvement in the productivity. A process for producing a photovoltaic device that includes forming a silicon-based photovoltaic layer on a substrate using a plasma enhanced CVD method that employs a gas containing a silane-based gas and hydrogen gas as the raw material gas, under conditions in which the flow rate of the hydrogen gas per unit surface area of the substrate is not less than 80 slm/m2.
    Type: Application
    Filed: July 8, 2009
    Publication date: December 15, 2011
    Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.
    Inventors: Saneyuki Goya, Satoshi Sakai