Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: A liquid droplet-forming device is provided, including: a liquid chamber; a discharge hole configured to discharge a raw material liquid in the liquid chamber in a form of liquid droplets; sealed space-forming means; and at least two flow paths, in which the sealed space-forming means is capable of forming a sealed space communicating with the liquid chamber through the discharge hole on a side opposite to the liquid chamber of the discharge hole, and the at least two flow paths communicate with each other through the sealed space.

Abstract: A manufacturing method for a separation membrane element is a manufacturing method for a spiral-wound type separation membrane element including a perforated hollow tube and a laminated body that includes a separation membrane and is wound around the hollow tube. The manufacturing method includes pressing a press member against a portion of the laminated body that is wound around the hollow tube. The pressing presses the press member to satisfy respective relations defined by formulas (1) and (2): 0.1×Ps1?Pe??(1), and 0.1×Ps2?Pe??(2).

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: A method of producing an extract of an animal-derived or plant-derived biological material includes: extracting a component in the biological material using liquefied dimethyl ether for the biological material to obtain a liquefied dimethyl ether solution including the component; separating the solution from the biological material; and volatilizing or separating the liquefied dimethyl ether from the solution.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: A method of producing an extract of an animal-derived or plant-derived biological material includes: extracting a component in the biological material using liquefied dimethyl ether for the biological material to obtain a liquefied dimethyl ether solution including the component; separating the solution from the biological material; and volatilizing or separating the liquefied dimethyl ether from the solution.

Abstract: A manufacturing method for a separation membrane element is a manufacturing method for a spiral-wound type separation membrane element including a perforated hollow tube and a laminated body that includes a separation membrane and is wound around the hollow tube. The manufacturing method includes pressing a press member against a portion of the laminated body that is wound around the hollow tube. The pressing presses the press member to satisfy respective relations defined by formulas (1) and (2): 0.1×Ps1?Pe??(1), and 0.1×Ps2?Pe??(2).

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: A method for producing a decellularized tissue includes steps of lysing a cell of a biological tissue using a liquid containing a liquefied gas, and degrading a nucleic acid component contained in the lysed cell of the biological tissue using a nucleolytic enzyme.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: A decellularized tissue producing method includes degrading DNA included in a biological tissue in which cells are destroyed, by using a first treatment liquid; degreasing the biological tissue in which the DNA is degraded, by using a second treatment liquid; and washing the degreased biological tissue, by using a third treatment liquid. At least one of the degrading, the degreasing, and the washing is performed by a circulation method.

Abstract: Provided is a honeycomb fired body in which the pressure loss in the initial state where PM has not accumulated is sufficiently low, the strength is sufficiently high, and the heat capacity is not small.

Abstract: This invention is intended to produce a novel functional material through solubilization and molecular weight reduction of a water-insoluble polymeric compound, such as a water-insoluble protein or water-insoluble polysaccharide, in a simple and efficient manner.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: A semiconductor device in which deterioration of electrical characteristics which becomes more noticeable as the transistor is miniaturized can be suppressed is provided. The semiconductor device includes an oxide semiconductor stack in which a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer are stacked in this order from the substrate side over a substrate; a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor stack; a gate insulating film over the oxide semiconductor stack, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating film. The first oxide semiconductor layer includes a first region. The gate insulating film includes a second region. When the thickness of the first region is TS1 and the thickness of the second region is TG1, TS1?TG1.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.

Abstract: Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion of a drain electrode layer (and the vicinity of an end portion of a source electrode layer) when a high gate voltage is applied to a gate electrode layer is reduced and degradation of switching characteristics is suppressed, so that the reliability is improved. The cross-sectional shape of an insulating layer which overlaps over a channel formation region is a tapered shape. The thickness of the insulating layer which overlaps over the channel formation region is 0.3 ?m or less, preferably 5 nm or more and 0.1 ?m or less. The taper angle ? of a lower end portion of the cross-sectional shape of the insulating layer which overlaps over the channel formation region is 60° or smaller, preferably 45° or smaller, further preferably 30° or smaller.

Abstract: Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device including the transistor. In the bottom-gate transistor in which at least a gate electrode layer, a gate insulating film, and the semiconductor layer are stacked in this order, an oxide semiconductor stacked layer including at least two oxide semiconductor layers whose energy gaps are different from each other is used as the semiconductor layer. Oxygen and/or a dopant may be added to the oxide semiconductor stacked layer.