Patents by Inventor Satoshi Yasuno

Satoshi Yasuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10468535
    Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: November 5, 2019
    Assignee: Kobe Steel, Ltd.
    Inventors: Shinya Morita, Toshihiro Kugimiya, Takeaki Maeda, Satoshi Yasuno, Yasuaki Terao, Aya Miki
  • Patent number: 10256091
    Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3??(1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5??(2), [Zn]/([In]+[Zn]+[Sn])?0.83??(3), and 0.1?[In]/([In]+[Zn]+[Sn])??(4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: April 9, 2019
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Hiroaki Tao, Aya Miki, Shinya Morita, Satoshi Yasuno, Toshihiro Kugimiya, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
  • Publication number: 20170053800
    Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3 - - - (1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])?0.83 - - - (3), and 0.1?[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
    Type: Application
    Filed: October 11, 2016
    Publication date: February 23, 2017
    Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.), Samsung Display Co., Ltd.
    Inventors: Hiroaki TAO, Aya MIKI, Shinya MORITA, Satoshi YASUNO, Toshihiro KUGIMIYA, Jae Woo PARK, Je Hun LEE, Byung Du AHN, Gun Hee KIM
  • Patent number: 9299474
    Abstract: There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: March 29, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Shinya Morita, Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
  • Patent number: 9184298
    Abstract: The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: November 10, 2015
    Assignee: Kobe Steel, Ltd.
    Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya
  • Patent number: 9178073
    Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: November 3, 2015
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Aya Miki, Shinya Morita, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
  • Patent number: 8907334
    Abstract: Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: December 9, 2014
    Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.
    Inventors: Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Shinya Morita, Yasuaki Terao, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
  • Publication number: 20130341617
    Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])?0.5. [In]/([In]+[Zn]+[Sn])?0.3 - - - (1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])?0.83 - - - (3), and 0.1?[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
    Type: Application
    Filed: March 8, 2012
    Publication date: December 26, 2013
    Applicants: Samsung Display Co., Ltd., KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)
    Inventors: Hiroaki Tao, Aya Miki, Shinya Morita, Satoshi Yasuno, Toshihiro Kugimiya, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
  • Publication number: 20130270109
    Abstract: The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.
    Type: Application
    Filed: December 28, 2011
    Publication date: October 17, 2013
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya, Tomoya Kishi
  • Publication number: 20130248855
    Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
    Type: Application
    Filed: November 28, 2011
    Publication date: September 26, 2013
    Applicants: Samsung Display Co., Ltd., Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)
    Inventors: Aya Miki, Shinya Morita, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
  • Publication number: 20130248858
    Abstract: The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer.
    Type: Application
    Filed: December 1, 2011
    Publication date: September 26, 2013
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)
    Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya
  • Publication number: 20130240802
    Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
    Type: Application
    Filed: November 28, 2011
    Publication date: September 19, 2013
    Applicants: Samsung Display Co., Ltd., KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel ,Ltd.)
    Inventors: Aya Miki, Shinya Morita, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
  • Publication number: 20130119324
    Abstract: There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.
    Type: Application
    Filed: July 28, 2011
    Publication date: May 16, 2013
    Applicants: Samsung Display Co., Ltd., KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)
    Inventors: Shinya Morita, Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
  • Publication number: 20130032798
    Abstract: Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.
    Type: Application
    Filed: April 18, 2011
    Publication date: February 7, 2013
    Applicants: SAMSUNG DISPLAY CO., LTD., KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
    Inventors: Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Shinya Morita, Yasuaki Terao, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
  • Publication number: 20130009111
    Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.
    Type: Application
    Filed: April 7, 2011
    Publication date: January 10, 2013
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Shinya Morita, Toshihiro Kugiyama, Takeaki Maeda, Satoshi Yasuno, Yasuaki Terao, Aya Miki