Patents by Inventor Satoshi Yasuno
Satoshi Yasuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10468535Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.Type: GrantFiled: April 7, 2011Date of Patent: November 5, 2019Assignee: Kobe Steel, Ltd.Inventors: Shinya Morita, Toshihiro Kugimiya, Takeaki Maeda, Satoshi Yasuno, Yasuaki Terao, Aya Miki
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Patent number: 10256091Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3??(1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5??(2), [Zn]/([In]+[Zn]+[Sn])?0.83??(3), and 0.1?[In]/([In]+[Zn]+[Sn])??(4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.Type: GrantFiled: October 11, 2016Date of Patent: April 9, 2019Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.Inventors: Hiroaki Tao, Aya Miki, Shinya Morita, Satoshi Yasuno, Toshihiro Kugimiya, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
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Publication number: 20170053800Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])>0.5. [In]/([In]+[Zn]+[Sn])?0.3 - - - (1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])?0.83 - - - (3), and 0.1?[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.Type: ApplicationFiled: October 11, 2016Publication date: February 23, 2017Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.), Samsung Display Co., Ltd.Inventors: Hiroaki TAO, Aya MIKI, Shinya MORITA, Satoshi YASUNO, Toshihiro KUGIMIYA, Jae Woo PARK, Je Hun LEE, Byung Du AHN, Gun Hee KIM
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Patent number: 9299474Abstract: There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.Type: GrantFiled: July 28, 2011Date of Patent: March 29, 2016Assignee: Samsung Display Co., Ltd.Inventors: Shinya Morita, Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
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Patent number: 9184298Abstract: The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer.Type: GrantFiled: December 1, 2011Date of Patent: November 10, 2015Assignee: Kobe Steel, Ltd.Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya
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Patent number: 9178073Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.Type: GrantFiled: November 28, 2011Date of Patent: November 3, 2015Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.Inventors: Aya Miki, Shinya Morita, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
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Patent number: 8907334Abstract: Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.Type: GrantFiled: April 18, 2011Date of Patent: December 9, 2014Assignees: Kobe Steel, Ltd., Samsung Display Co., Ltd.Inventors: Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Shinya Morita, Yasuaki Terao, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
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Publication number: 20130341617Abstract: The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])?0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])?0.5. [In]/([In]+[Zn]+[Sn])?0.3 - - - (1), [In]/([In]+[Zn]+[Sn])?1.4×{[Zn]/([Zn]+[Sn])}?0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])?0.83 - - - (3), and 0.1?[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.Type: ApplicationFiled: March 8, 2012Publication date: December 26, 2013Applicants: Samsung Display Co., Ltd., KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)Inventors: Hiroaki Tao, Aya Miki, Shinya Morita, Satoshi Yasuno, Toshihiro Kugimiya, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
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Publication number: 20130270109Abstract: The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.Type: ApplicationFiled: December 28, 2011Publication date: October 17, 2013Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya, Tomoya Kishi
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Publication number: 20130248855Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])??0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])?2.28×[Zn]/([Zn]+[Sn])?2.01 (2) [In]/([In]+[Zn]+[Sn])?1.1×[Zn]/([Zn]+[Sn])?0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.Type: ApplicationFiled: November 28, 2011Publication date: September 26, 2013Applicants: Samsung Display Co., Ltd., Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)Inventors: Aya Miki, Shinya Morita, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn, Gun Hee Kim
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Publication number: 20130248858Abstract: The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer.Type: ApplicationFiled: December 1, 2011Publication date: September 26, 2013Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)Inventors: Shinya Morita, Aya Miki, Satoshi Yasuno, Toshihiro Kugimiya
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Publication number: 20130240802Abstract: This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.Type: ApplicationFiled: November 28, 2011Publication date: September 19, 2013Applicants: Samsung Display Co., Ltd., KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel ,Ltd.)Inventors: Aya Miki, Shinya Morita, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
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Publication number: 20130119324Abstract: There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si.Type: ApplicationFiled: July 28, 2011Publication date: May 16, 2013Applicants: Samsung Display Co., Ltd., KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)Inventors: Shinya Morita, Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
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Publication number: 20130032798Abstract: Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.Type: ApplicationFiled: April 18, 2011Publication date: February 7, 2013Applicants: SAMSUNG DISPLAY CO., LTD., KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)Inventors: Aya Miki, Yumi Iwanari, Toshihiro Kugimiya, Shinya Morita, Yasuaki Terao, Satoshi Yasuno, Jae Woo Park, Je Hun Lee, Byung Du Ahn
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Publication number: 20130009111Abstract: Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.Type: ApplicationFiled: April 7, 2011Publication date: January 10, 2013Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Shinya Morita, Toshihiro Kugiyama, Takeaki Maeda, Satoshi Yasuno, Yasuaki Terao, Aya Miki