Patents by Inventor Sayaka Tanimoto
Sayaka Tanimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10037866Abstract: A charged particle beam apparatus with improved depth of focus and maintained/improved resolution has a charged particle source, an off-axis illumination aperture, a lens, a computer, and a memory unit. The apparatus acquires an image by detecting a signal generated by irradiating a sample with a charged particle beam caused from the charged particle source via the off-axis illumination aperture. The computer has a beam-computing-process unit to estimate a beam profile of the charged particle beam and an image-sharpening-process unit to sharpen the image using the estimated beam profile.Type: GrantFiled: July 22, 2016Date of Patent: July 31, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Momoyo Enyama, Muneyuki Fukuda, Hideyuki Kazumi, Koichi Hamada, Sayaka Tanimoto
-
Publication number: 20170025251Abstract: A charged particle beam apparatus with improved depth of focus and maintained/improved resolution has a charged particle source, an off-axis illumination aperture, a lens, a computer, and a memory unit. The apparatus acquires an image by detecting a signal generated by irradiating a sample with a charged particle beam caused from the charged particle source via the off-axis illumination aperture. The computer has a beam-computing-process unit to estimate a beam profile of the charged particle beam and an image-sharpening-process unit to sharpen the image using the estimated beam profile.Type: ApplicationFiled: July 22, 2016Publication date: January 26, 2017Inventors: Momoyo ENYAMA, Muneyuki FUKUDA, Hideyuki KAZUMI, Koichi HAMADA, Sayaka TANIMOTO
-
Patent number: 9287082Abstract: A charged particle beam apparatus includes a charged particle beam source which irradiates a sample with a charged particle beam, an electromagnetic lens, a lens control electric source for controlling strength of a convergence effect of the electromagnetic lens; and a phase compensation circuit which is connected to the lens control electric source in parallel with the electromagnetic lens, and controls a lens current at the time of switching the strength of the convergence effect of the electromagnetic lens such that the lens current monotonically increases or monotonically decreases.Type: GrantFiled: February 7, 2015Date of Patent: March 15, 2016Assignee: Hitachi High-Technologies CorporationInventors: Kenichi Morita, Sayaka Tanimoto, Makoto Sakakibara, Muneyuki Fukuda, Naomasa Suzuki, Kenji Obara
-
Publication number: 20150228443Abstract: A charged particle beam apparatus includes a charged particle beam source which irradiates a sample with a charged particle beam, an electromagnetic lens, a lens control electric source for controlling strength of a convergence effect of the electromagnetic lens; and a phase compensation circuit which is connected to the lens control electric source in parallel with the electromagnetic lens, and controls a lens current at the time of switching the strength of the convergence effect of the electromagnetic lens such that the lens current monotonically increases or monotonically decreases.Type: ApplicationFiled: February 7, 2015Publication date: August 13, 2015Inventors: Kenichi MORITA, Sayaka TANIMOTO, Makoto SAKAKIBARA, Muneyuki FUKUDA, Naomasa SUZUKI, Kenji OBARA
-
Publication number: 20130248731Abstract: There is provided both an electron beam apparatus and a lens array, capable of correcting a curvature of field aberration under various optical conditions. The electron beam apparatus comprises the lens array having a plurality of electrodes, and multiple openings are formed in the respective electrodes. An opening diameter distribution with respect to the respective opening diameters of the plural openings formed in the respective electrodes are individually set, and voltages applied to the respective electrodes are independently controlled to thereby independently adjust an image forming position of a reference beam, and a curvature of the lens array image surface.Type: ApplicationFiled: January 4, 2013Publication date: September 26, 2013Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Sayaka TANIMOTO, Hiroya OHTA, Makoto SAKAKIBARA, Momoyo ENYAMA, Kenji TANIMOTO
-
Patent number: 8193493Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: GrantFiled: February 22, 2011Date of Patent: June 5, 2012Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
-
Patent number: 8026482Abstract: Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.Type: GrantFiled: June 19, 2008Date of Patent: September 27, 2011Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Hiromasa Yamanashi, Sayaka Tanimoto, Yasunari Souda, Osamu Nasu
-
Publication number: 20110139985Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: ApplicationFiled: February 22, 2011Publication date: June 16, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Sayaka TANIMOTO, Hiroya OHTA, Hiroshi MAKINO, Ryuichi FUNATSU
-
Patent number: 7906761Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: GrantFiled: February 26, 2008Date of Patent: March 15, 2011Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
-
Patent number: 7880143Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.Type: GrantFiled: December 18, 2007Date of Patent: February 1, 2011Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
-
Publication number: 20100133433Abstract: A plurality of primary beams are formed from a single electron source, the surface charge of a sample is controlled by at least one primary beam, and at the same time, the inspection of the sample is conducted using a primary beam other than this. Also, for an exposure area of the primary beam for surface charge control and an exposure area of the primary beam for the inspection, the surface electric field strength is set individually. Also, the current of the primary beam for surface charge control and the interval between the primary beam for surface charge control and the primary beam for inspection are controlled.Type: ApplicationFiled: December 18, 2007Publication date: June 3, 2010Inventors: Sayaka TANIMOTO, Hiroya Ohta, Hiroshi Makino, Ryuichi Funatsu
-
Patent number: 7679056Abstract: The present invention provides a pattern inspection technique that enables measurement and inspection of a fine pattern by a charged particle beam to be performed with high throughput.Type: GrantFiled: March 16, 2007Date of Patent: March 16, 2010Assignee: Hitachi High-Technologies CorporationInventors: Hiromasa Yamanashi, Muneyuki Fukuda, Sayaka Tanimoto, Yasunari Sohda
-
Patent number: 7655907Abstract: It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.Type: GrantFiled: February 9, 2007Date of Patent: February 2, 2010Assignee: Hitachi High-Technologies CorporationInventors: Sayaka Tanimoto, Hiromasa Yamanashi, Muneyuki Fukuda, Yasunari Sohda
-
Publication number: 20090140143Abstract: Potentials at a plurality of points on a diameter of a semiconductor wafer 13 are measured actually. Then, a potential distribution on the diameter is obtained by spline interpolation of potentials between the actually-measured points adjacent in the diameter direction. Thereafter, a two-dimensional interpolation function regarding a potential distribution in the semiconductor wafer 13 is obtained by spline interpolation of potentials between points adjacent in the circumferential direction around the center of the semiconductor wafer 13. Then, a potential at a observation point on the semiconductor wafer 13 is obtained by substituting the coordinate value of this observation point into the two-dimensional interpolation function. As a result, a potential distribution due to electrification of the wafer can be estimated accurately, and the retarding potential can be set to a suitable value.Type: ApplicationFiled: June 19, 2008Publication date: June 4, 2009Inventors: Muneyuki FUKUDA, Hiromasa Yamanashi, Sayaka Tanimoto, Yasunari Souda, Osamu Nasu
-
Publication number: 20080230697Abstract: A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.Type: ApplicationFiled: February 26, 2008Publication date: September 25, 2008Inventors: Sayaka TANIMOTO, Hiroya OHTA, Hiroshi MAKINO, Ryuichi FUNATSU
-
Patent number: 7408760Abstract: During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the wafer to the ground potential via the earth pin is measured. Then, based on the measurement result, the potential difference is given between the wafer and the ground potential.Type: GrantFiled: September 9, 2005Date of Patent: August 5, 2008Assignees: Hitachi High-Technologies Corporation, Canon Kabushiki KaishaInventors: Sayaka Tanimoto, Yasunari Soda, Masakazu Sugaya, Hiroshi Tooyama, Takeshi Tsutsumi, Yasuhiro Someda
-
Patent number: 7378668Abstract: In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.Type: GrantFiled: June 27, 2006Date of Patent: May 27, 2008Assignees: Hitachi High-Technologies Corporation, Canon Kabushiki KaishaInventors: Sayaka Tanimoto, Yasunari Sohda, Yasuhiro Someda, Masaki Hosoda
-
Publication number: 20080067376Abstract: This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen.Type: ApplicationFiled: May 21, 2007Publication date: March 20, 2008Inventors: Sayaka Tanimoto, Osamu Kamimura, Yasunari Sohda, Hiroya Ohta
-
Publication number: 20070272858Abstract: It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.Type: ApplicationFiled: February 9, 2007Publication date: November 29, 2007Inventors: Sayaka Tanimoto, Hiromasa Yamanashi, Muneyuki Fukuda, Yasunari Sohda
-
Patent number: 7276709Abstract: To achieve high-resolution lithography, the temperature of a sample is controlled with heater wires during electron-beam lithography, the adverse effect of a magnetic field induced by the heater current is suppressed. Namely, heater wires are used to control the temperature of a sample so that the temperature will be maintained constant. In order to minimize the adverse effect of a magnetic field during the passage of currents through the heater wires, two heater wires are layered with the arrangement of the upper and lower sides, currents are fed to flow through the heater wires in mutually opposite directions, and the ratio of the current flowing through the upper heater wire to the one flowing through the lower heater wire is slightly changed from zero.Type: GrantFiled: April 20, 2005Date of Patent: October 2, 2007Assignee: Hitachi High-Technologies CorporationInventors: Yoshimasa Fukushima, Hiroshi Tsuji, Sayaka Tanimoto