Abstract: A nonvolatile memory device according to an embodiment includes a substrate, a cell electrode structure disposed on the substrate and including interlayer insulating layers and gate electrode layers that are alternately stacked, a trench penetrating the cell structure on the substrate, a charge storage structure disposed on a sidewall surface of the trench, and a channel structure disposed adjacent to the charge storage structure and extending in a direction parallel to the sidewall surface. The channel structure includes a separate hole conduction layer and an adjacent and separate electron conduction layer. A control channel layer disposed on a control dielectric layer is a portion of the electron conduction layer configured to electrically connect to the channel structure, and to the charge storage structure. A control dielectric layer and a charge barrier layer are discrete but contiguous from the control channel structure to the charge storage structure.

Abstract: A semiconductor device according to an embodiment includes a first electrode, a dielectric layer structure disposed on the first electrode and having a ferroelectric layer and a non-ferroelectric layer, and a second electrode disposed on the dielectric structure. The ferroelectric layer has positive and negative coercive electric fields having different absolute values. The dielectric structure has a non-ferroelectric property.

Abstract: In a method of fabricating a nonvolatile memory device according an embodiment, a first tunnel oxide layer, a nitrogen supply layer, and a second tunnel oxide layer having a density lower than that of the first tunnel oxide layer are formed on a substrate. Nitrogen in the nitrogen supply layer is diffused into the second tunnel oxide layer to convert at least a portion of the second tunnel oxide layer into an oxynitride layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an electrode stack disposed on the substrate, the electrode stack including an interlayer insulation layer and a gate electrode structure that are alternately stacked in a direction perpendicular to the substrate, a trench penetrating the electrode stack to expose sidewall surfaces of the interlayer insulation layer and the gate electrode structure, a gate dielectric layer disposed along a sidewall surface of the trench, the gate dielectric layer including a ferroelectric portion and a non-ferroelectric portion, and a channel layer disposed to adjacent to the gate dielectric layer. The ferroelectric portion is in contact with the gate electrode structure, and the non-ferroelectric portion is in contact with the interlayer insulation layer.

Abstract: The present invention relates to a polyarylene sulfide resin composition having good processability and showing excellent properties due to its more improved miscibility with other polymer materials or fillers, and a formed article. Such polyarylene sulfide resin composition includes a polyarylene sulfide including a disulfide repeating unit in the repeating units of the main chain; and at least one component selected from the group consisting of a thermoplastic resin, a thermoplastic elastomer, and a filler.

Abstract: A data storage apparatus includes a nonvolatile memory device including a first memory region and a second memory region and a controller configured to control a write operation of the nonvolatile memory device. The controller includes a memory configured to store at least one or more write requests and address information for the write requests received from a host apparatus and a processor configured to collect address information corresponding to a preset sampling range among the address information as a first sampling address, determine continuity between the collected address information of the first sampling address, and control the nonvolatile memory device to store data corresponding to all or a portion of the write requests for the address information of the first sampling address in the first memory region based on a determination result.

Abstract: The present invention relates to a polyarylene sulfide resin composition having good processability and showing excellent properties due to its more improved miscibility with other polymer materials or fillers, and a formed article. Such polyarylene sulfide resin composition includes a polyarylene sulfide including a disulfide repeating unit in the repeating units of the main chain; and at least one component selected from the group consisting of a thermoplastic resin, a thermoplastic elastomer, and a filler.

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a pixel formed on the substrate and including a pixel area displaying an image and a peripheral area adjacent to the pixel area; an insulating layer at the pixel area and the peripheral area on the substrate; a first electrode at the pixel area on the insulating layer; an organic emission layer on the first electrode and extending to the peripheral area; a second electrode on the organic emission layer and disposed in the pixel area and the peripheral area; an auxiliary electrode in the peripheral area on the substrate and partially exposed by a first opening formed in the insulating layer; and an auxiliary member disposed on the auxiliary electrode and in contact with an upper surface of the auxiliary electrode exposed by the first opening.

Abstract: A data storage device may include: a storage unit comprising a storage comprising a storage area divided into a plurality of blocks, and a controller configured to control a data input/output operation on the storage according to a request of a host device, collect information on a block, of the plurality of blocks, involved in a background operation which is performed while power is supplied, store the collected information as hint information, and resume a background operation started before a sudden power-off, based on the hint information, when power is resupplied after the sudden power-off.

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a pixel formed on the substrate and including a pixel area displaying an image and a peripheral area adjacent to the pixel area; an insulating layer at the pixel area and the peripheral area on the substrate; a first electrode at the pixel area on the insulating layer; an organic emission layer on the first electrode and extending to the peripheral area; a second electrode on the organic emission layer and disposed in the pixel area and the peripheral area; an auxiliary electrode in the peripheral area on the substrate and partially exposed by a first opening formed in the insulating layer; and an auxiliary member disposed on the auxiliary electrode and in contact with an upper surface of the auxiliary electrode exposed by the first opening.

Abstract: The present invention relates to a polyarylene sulfide having more improved miscibility with other polymer materials or fillers, and a method of preparing the same. At least part of end groups of the main chain of the polyarylene sulfide is carboxyl group (—COOH) or amine group (—NH2).

Abstract: The present invention relates to a polyarylene sulfide resin composition which has excellent processability and exhibit excellent physical properties due to its more improved compatibility with other polymer materials or fillers, and a molded article including the same. Such polyarylene sulfide resin composition comprises: a polyarylene sulfide including a disulfide repeating unit in the repeating units of the main chain, wherein at least part of end groups of the main chain is hydroxyl group (—OH); and one or more components selected from the group consisting of a thermoplastic resin, a thermoplastic elastomer and a filler.

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a pixel formed on the substrate and including a pixel area displaying an image and a peripheral area adjacent to the pixel area; an insulating layer at the pixel area and the peripheral area on the substrate; a first electrode at the pixel area on the insulating layer; an organic emission layer on the first electrode and extending to the peripheral area; a second electrode on the organic emission layer and disposed in the pixel area and the peripheral area; an auxiliary electrode in the peripheral area on the substrate and partially exposed by a first opening formed in the insulating layer; and an auxiliary member disposed on the auxiliary electrode and in contact with an upper surface of the auxiliary electrode exposed by the first opening.

Abstract: The present invention relates to a polyarylene sulfide which has more improved compatibility with other polymer materials or fillers, and a method for preparing the same. The polyarylene sulfide is characterized in that at least part of end groups of the main chain of the polyarylene sulfide is hydroxyl group (—OH), the polyarylene sulfide contains iodine bonded to its main chain and free iodine, and the content of iodine bonded to the main chain and free iodine is 10 to 10,000 ppmw.

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a pixel formed on the substrate and including a pixel area displaying an image and a peripheral area adjacent to the pixel area; an insulating layer at the pixel area and the peripheral area on the substrate; a first electrode at the pixel area on the insulating layer; an organic emission layer on the first electrode and extending to the peripheral area; a second electrode on the organic emission layer and disposed in the pixel area and the peripheral area; an auxiliary electrode in the peripheral area on the substrate and partially exposed by a first opening formed in the insulating layer; and an auxiliary member disposed on the auxiliary electrode and in contact with an upper surface of the auxiliary electrode exposed by the first opening.

Abstract: A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.

Abstract: A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.

Abstract: A display apparatus includes a display panel, a display panel driver and a first connection wire. The display panel includes a substrate and a display layer disposed on a first surface of the substrate. The display panel driver applies a driving signal to the display panel. The display panel driver is disposed on a second surface opposite to the first surface of the substrate. The first connection wire is disposed at a first side surface connecting the first and second surfaces of the substrate. The first connection wire connects electrically the display panel with the display panel driver.

Abstract: The present invention relates to a polyarylene sulfide resin composition having excellent impact resistance in which a polyarylene sulfide resin having a specific end group, an epoxy-containing olefin-based elastomer, and/or an organic or inorganic filler are included, and a preparation method thereof.

Abstract: A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.