Patents by Inventor Se-Hyuk Oh

Se-Hyuk Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10522216
    Abstract: Disclosed is a static random access memory including an assist circuit. More particularly, a static random access memory according to an embodiment of the present disclosure may include a bit cell part including at least one bit cell connected between a first ground voltage node and a second ground voltage node; and a controller including a first transistor configured to control connection between the first ground voltage node and the second ground voltage node, a second transistor configured to float a first ground voltage of the first ground voltage node, and a third transistor configured to float a second ground voltage of the second ground voltage node, wherein the controller controls the first and second ground voltages supplied to the bit cell part using the first, second, and third transistors.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: December 31, 2019
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Seong Ook Jung, Se Hyuk Oh, Han Wool Jeong, Ju Hyun Park
  • Patent number: 10438886
    Abstract: A semiconductor device may include an insulating layer, a pad, a circuit, at least one first wiring, at least-one second wiring, at least one third wiring, and a pad contact. The pad may be disposed on the insulating layer. The circuit may be disposed in the insulating layer. The circuit may be positioned below the pad. The first wiring may be disposed between the pad and the circuit. The second wiring may be disposed between the pad and the first wiring. The third wiring may be disposed between the pad and the second wiring. The pad contact may be configured to directly connect the pad to the circuit.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: October 8, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Se-Il Oh, Jung-Ha Oh, Hyuck-Joon Kwon, Jong-Hyuk Kim, Jong-Moon Yoon
  • Publication number: 20190027213
    Abstract: Disclosed is a static random access memory including an assist circuit. More particularly, a static random access memory according to an embodiment of the present disclosure may include a bit cell part including at least one bit cell connected between a first ground voltage node and a second ground voltage node; and a controller including a first transistor configured to control connection between the first ground voltage node and the second ground voltage node, a second transistor configured to float a first ground voltage of the first ground voltage node, and a third transistor configured to float a second ground voltage of the second ground voltage node, wherein the controller controls the first and second ground voltages supplied to the bit cell part using the first, second, and third transistors.
    Type: Application
    Filed: July 18, 2018
    Publication date: January 24, 2019
    Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI U NIVERSITY
    Inventors: Seong Ook JUNG, Se Hyuk OH, Han Wool JEONG, Ju Hyun PARK
  • Publication number: 20030192061
    Abstract: A set-top box system and method for viewing digital broadcasts.
    Type: Application
    Filed: March 11, 2003
    Publication date: October 9, 2003
    Inventors: Seung Hwangbo, Nak-Koo Kim, Se-Hyuk Oh