Abstract: The embodiments disclose a method of fabricating servo integrated templates including depositing a protective layer on servo zone resist layer patterns, patterning integrated data zone features into a substrate, depositing a protective layer on data zones and removing the servo zone protective layer and patterning integrated servo zone features into the substrate and removing the data zone protective layer creating a substrate template used in fabricating data and servo zone integrated patterned stacks.

Abstract: Programmable metallization memory cells include an electrochemically active electrode, an inert electrode and an internal layer between the electrochemically active electrode and the inert electrode. The internal layer having a fast ion conductor material and an apertured layer having a plurality of apertures defined by an electrically insulating material. Each aperture defines at least a portion of a column of fast ion conductor material having superionic clusters.

Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.

Abstract: A magnetic memory unit includes a tunneling barrier separating a free magnetic element and a reference magnetic element. A first phonon glass electron crystal layer is disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element. A second phonon glass electron crystal layer also be disposed on a side opposing the tunneling barrier of either the free magnetic element or the reference magnetic element to provide a Peltier effect on the free magnetic element and the reference magnetic element.

Abstract: A waveguide that includes a first cladding layer, the first cladding layer having an index of refraction, n3; a gradient index layer positioned adjacent the first cladding layer; an assist layer positioned adjacent the gradient index layer, the assist layer having an index of refraction, n2; a core layer positioned adjacent the assist layer, the core layer having an index of refraction, n1; and a second cladding layer, the second cladding layer having an index of refraction, n4, wherein n1 is greater than n2, n3, and n4; and n2 is greater than n3 and n4.

Abstract: A patterned magnetic recording medium for use in heat assisted magnetic recording comprises an electrically conductive heat sink layer and a plurality of discrete magnetic recording elements positioned adjacent to a first surface of the heat sink layer. Disc drives that include the patterned medium and a method of magnetic recording using the patterned media are also included.

Abstract: This application discloses a hard disk drive and a control circuit that are configured to determine touchdown by determining the SAGC for a track, removing the repeatable component of the SAGC to create the non-repeatable component and determining an indication of clearance irregularity and/or touch down when the standard deviation of the non-repeatable component spikes. These operations may create a defect map and/or a Flying height On Demand (FOD) control table in or for the hard disk drive as products of operating the hard disk drive.

Abstract: A magnetic recording head consists of a write pole and a near field transducer close to the write pole that focuses light energy to a focal point. A near field transducer is positioned to receive light energy from a waveguide. The near field transducer comprises an energy-receiving end and an energy-radiating end. The energy-receiving end is located near the focal point of the waveguide and the energy-radiating end is shaped such that it is narrower closer to the write pole and wider farther from the write pole.

Abstract: A method for encoder frequency-shift compensation includes determining frequency values of an input encoder signal, determining repeatable frequency-shifts of the frequency values and generating a frequency-shift compensated clock using the repeatable frequency-shifts. A frequency-shift compensated clock includes a synthesizer configured to generate a frequency-shift compensated clock signal using repeatable frequency shifts and encoder clock signals.

Abstract: A perpendicular recording medium with enhanced magnetic stability. In accordance with some embodiments, a multi-layer recording structure is formed on a base substrate and adapted to magnetically store a magnetic bit sequence in domains substantially perpendicular to said layers. A thin magnetic stabilization layer is formed on the multi-layer recording substrate to magnetically stabilize an upper portion of the recording structure.

Abstract: Methods of forming non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.

Abstract: This disclosure is related to systems and methods for storing data in multi-level cell solid state storage devices, such as Flash memory devices. In one example, a multi-level cell memory array has programmable pages, a first page having a first programming time, and a second page having a second programming time that is different than the first programming time. In one embodiment, the first programming time is faster than the to second programming time. Further, a controller coupled to the multi-level cell memory array may be configured to select the first page to store the data when a priority level of a write operation indicates a first priority level and select the second page to store the data when the priority level indicates a second priority level.

Abstract: An apparatus and associated method may be used to provide a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers and [a] means for generating a high magnetic moment region proximal to an air bearing surface (ABS) and a low magnetic moment region proximal to a hard magnet.

Abstract: Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.

Abstract: Apparatus and method for vapor deposition of a uniform thickness thin film of lubricant on at least one surface of a disk-shaped substrate. The invention has particular utility in depositing thin films of polymeric lubricants onto disc-shaped substrates in the manufacture of magnetic and MO recording media.

Abstract: A write element for magnetic recording includes a main pole and a shield. The main pole has first and second sides with respect to a down-track direction. The shield at least partially surrounds the main pole with a continuously concave inner sidewall. The angle between the inner sidewall of the shield and the direction of motion of the write element is greater than the angle between the sides of the main pole and the direction of motion.

Abstract: Certain embodiments of the present disclosure related to systems, methods, and devices for increasing data access speeds. In certain embodiments, a method includes running multiple cache retrieval processes in parallel, in response to a read command. In certain embodiments, a method includes initiating a first cache retrieval process and a second cache retrieval process to run in parallel, in response to a single read command.

Abstract: An apparatus includes a slider including an air bearing surface and a waveguide configured to receive light from a light source, a sensor positioned to receive a portion of light emitted by the light source prior to the light exiting the slider at the air bearing surface, and a controller controlling the light source power in response to a characteristic of the sensor.

Abstract: A method and apparatus for writing data to a non-volatile memory cell, such as an STRAM memory cell or an RRAM memory cell. In some embodiments, a plurality of N non-volatile memory cells, where N is a greater than two, are connected to a common floating source line. A write circuit is adapted to program a selected memory cell of the plurality to a selected data state by passing a write current of selected magnitude through the selected memory cell and concurrently passing a portion of the write current in parallel through each of the remaining N?1 memory cells of the plurality via the common floating source line.