Patents by Inventor Sean D. Burns
Sean D. Burns has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10546774Abstract: An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a ? line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a ? line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an ? line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a ??? jog; a ??? jog; and ??? jog; a ??? jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.Type: GrantFiled: April 10, 2018Date of Patent: January 28, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Patent number: 10529569Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.Type: GrantFiled: August 8, 2018Date of Patent: January 7, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Publication number: 20190393082Abstract: An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a ? line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a ? line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an ? line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a ??? jog; a ??? jog; an ??? jog; a ??? jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.Type: ApplicationFiled: August 28, 2019Publication date: December 26, 2019Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A.M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Publication number: 20190333774Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.Type: ApplicationFiled: July 11, 2019Publication date: October 31, 2019Inventors: Sean D. Burns, Nelson M. Felix, Chi-Chun Liu, Yann A.M. Mignot, Stuart A. Sieg
-
Patent number: 10410875Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern has hardmask fins of three mutually selectively etchable compositions. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.Type: GrantFiled: November 3, 2017Date of Patent: September 10, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Nelson M. Felix, Chi-Chun Liu, Yann A. M. Mignot, Stuart A. Sieg
-
Patent number: 10395985Abstract: A method for forming conductive lines comprises forming a hardmask on an insulator layer, a planarizing layer on the hardmask, and a hardmask on the planarizing layer, removing exposed portions of a layer of sacrificial mandrel material to form first and second sacrificial mandrels on the hardmask, and depositing a layer of spacer material in the gap, and over exposed portions of the first and second sacrificial mandrels and the hardmask. Portions of the layer of spacer material are removed to expose the first and second sacrificial mandrels. A filler material is deposited between the first and second sacrificial mandrels. A portion of the filler material is removed to expose the first and second sacrificial mandrels. Portions of the layer of spacer material are removed to expose portions of the hardmask. A trench is formed in the insulator layer, and the trench is filled with a conductive material.Type: GrantFiled: April 12, 2018Date of Patent: August 27, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Patent number: 10388525Abstract: Multi-angled deposition and masking techniques are provided to enable custom trimming and selective removal of spacers that are used for patterning features at sub-lithographic dimensions. For example, a method includes forming a sacrificial mandrel on a substrate, and forming first and second spacers on opposing sidewalls of the sacrificial mandrel. The first and second spacers are formed with an initial thickness Ts. A first angle deposition process is performed to deposit a material (e.g., insulating material or metallic material) at a first deposition angle A1 to form a first trim mask layer on an upper portion of the first spacer and the sacrificial mandrel while preventing the material from being deposited on the second spacer. A spacer etch process is performed to trim the first spacer to a first thickness T1, which is less than Ts, using the first trim mask layer as an etch mask.Type: GrantFiled: November 13, 2017Date of Patent: August 20, 2019Assignee: International Business Machines CorporationInventors: Marc A. Bergendahl, Sean D. Burns, Lawrence A. Clevenger, Christopher J. Penny, Michael Rizzolo
-
Patent number: 10361079Abstract: Multi-angled deposition and masking techniques are provided to enable custom trimming and selective removal of spacers that are used for patterning features at sub-lithographic dimensions. For example, a method includes forming a sacrificial mandrel on a substrate, and forming first and second spacers on opposing sidewalls of the sacrificial mandrel. The first and second spacers are formed with an initial thickness TS. A first angle deposition process is performed to deposit a material (e.g., insulating material or metallic material) at a first deposition angle A1 to form a first trim mask layer on an upper portion of the first spacer and the sacrificial mandrel while preventing the material from being deposited on the second spacer. A spacer etch process is performed to trim the first spacer to a first thickness T1, which is less than TS, using the first trim mask layer as an etch mask.Type: GrantFiled: November 13, 2017Date of Patent: July 23, 2019Assignee: International Business Machines CorporationInventors: Marc A. Bergendahl, Sean D. Burns, Lawrence A. Clevenger, Christopher J. Penny, Michael Rizzolo
-
Publication number: 20190221428Abstract: Lithographic patterning methods are provided which implement directed self-assembly (DSA) of block copolymers to enable self-aligned cutting of features. A first layer and second layer of material are formed on a substrate. The second layer of material is lithographically patterning to form a guiding pattern. A DSA process is performed to form a block copolymer pattern around the guiding pattern, which comprises a repeating block chain that includes at least a first block material and a second block material, which have etch selectivity with respect to each other. A selective etch process is performed to selectively etching one of the first block material and the second block material to form self-aligned openings in the block copolymer pattern which expose portions of the first layer of material. The first layer of material is patterned by etching the exposed portions of the first layer of material.Type: ApplicationFiled: January 15, 2018Publication date: July 18, 2019Inventors: Sean D. Burns, Sivananda K. Kanakasabapathy, Kafai Lai, Chi-Chun Liu, Kristin Schmidt, Ankit Vora
-
Patent number: 10312103Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern has hardmask fins of three mutually selectively etchable compositions. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.Type: GrantFiled: February 28, 2017Date of Patent: June 4, 2019Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Nelson M. Felix, Chi-Chun Liu, Yann A. M. Mignot, Stuart A. Sieg
-
Publication number: 20180350599Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.Type: ApplicationFiled: August 8, 2018Publication date: December 6, 2018Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Patent number: 10121661Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.Type: GrantFiled: October 17, 2017Date of Patent: November 6, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Publication number: 20180286682Abstract: Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical dimensions to a desired final layer using a selective gas etching process. The first block is a first hardmask material that can be plasma etched using a first gas, and the second block is a second hardmask material that can be plasma etched using a second gas separate from the first gas. The first hardmask material is not plasma etched using the second gas, and the second hardmask material is not plasma etched using the first gas.Type: ApplicationFiled: June 6, 2018Publication date: October 4, 2018Inventors: John Christopher ARNOLD, Sean D. BURNS, Yann Alain Marcel MIGNOT, Yongan XU
-
Patent number: 10083864Abstract: A method for forming conductive lines comprises forming a hardmask on an insulator layer, a planarizing layer on the hardmask, and a hardmask on the planarizing layer, removing exposed portions of a layer of sacrificial mandrel material to form first and second sacrificial mandrels on the hardmask, and depositing a layer of spacer material in the gap, and over exposed portions of the first and second sacrificial mandrels and the hardmask. Portions of the layer of spacer material are removed to expose the first and second sacrificial mandrels. A filler material is deposited between the first and second sacrificial mandrels. A portion of the filler material is removed to expose the first and second sacrificial mandrels. Portions of the layer of spacer material are removed to expose portions of the hardmask. A trench is formed in the insulator layer, and the trench is filled with a conductive material.Type: GrantFiled: January 13, 2017Date of Patent: September 25, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A. M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Publication number: 20180247824Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern has hardmask fins of three mutually selectively etchable compositions. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.Type: ApplicationFiled: February 28, 2017Publication date: August 30, 2018Inventors: Sean D. Burns, Nelson M. Felix, Chi-Chun Liu, Yann A.M. Mignot, Stuart A. Sieg
-
Publication number: 20180247864Abstract: A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.Type: ApplicationFiled: May 1, 2018Publication date: August 30, 2018Inventors: Sean D. Burns, Lawrence A. Clevenger, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Nicole Saulnier
-
Publication number: 20180247825Abstract: A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern has hardmask fins of three mutually selectively etchable compositions. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.Type: ApplicationFiled: November 3, 2017Publication date: August 30, 2018Inventors: Sean D. Burns, Nelson M. Felix, Chi-Chun Liu, Yann A.M. Mignot, Stuart A. Sieg
-
Patent number: 10056290Abstract: A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.Type: GrantFiled: June 30, 2016Date of Patent: August 21, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, Lawrence A. Clevenger, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Nicole Saulnier
-
Publication number: 20180233408Abstract: A method for forming conductive lines comprises forming a hardmask on an insulator layer, a planarizing layer on the hardmask, and a hardmask on the planarizing layer, removing exposed portions of a layer of sacrificial mandrel material to form first and second sacrificial mandrels on the hardmask, and depositing a layer of spacer material in the gap, and over exposed portions of the first and second sacrificial mandrels and the hardmask. Portions of the layer of spacer material are removed to expose the first and second sacrificial mandrels. A filler material is deposited between the first and second sacrificial mandrels. A portion of the filler material is removed to expose the first and second sacrificial mandrels. Portions of the layer of spacer material are removed to expose portions of the hardmask. A trench is formed in the insulator layer, and the trench is filled with a conductive material.Type: ApplicationFiled: April 12, 2018Publication date: August 16, 2018Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A.M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier
-
Publication number: 20180233403Abstract: An interconnect structure having a pitch of less than 40 nanometers and a self-aligned quadruple patterning process for forming the interconnect structure includes three types of lines: a ? line defined by a patterned bottom mandrel formed in the self-aligned quadruple patterning process; a ? line defined by location underneath a top mandrel formed in the self-aligned quadruple patterning process; and an ? line defined by elimination located underneath neither the top mandrel or the bottom mandrel formed in the self-aligned quadruple patterning process. The interconnect structure further includes multi-track jogs selected from a group consisting of a ??? jog; a ??? jog; and ??? jog; a ??? jog, and combinations thereof. The first and third positions refer to the uncut line and the second position refers to the cut line in the self-aligned quadruple patterning process.Type: ApplicationFiled: April 10, 2018Publication date: August 16, 2018Inventors: Sean D. Burns, Lawrence A. Clevenger, Matthew E. Colburn, Sivananda K. Kanakasabapathy, Yann A.M. Mignot, Christopher J. Penny, Roger A. Quon, Nicole A. Saulnier