Patents by Inventor Sehrina Muzahid ESHON

Sehrina Muzahid ESHON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Boron nitride nanostructures
    Patent number: 12060267
    Abstract: The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: August 13, 2024
    Assignee: ONALBA PTY LTD
    Inventors: Sehrina Muzahid Eshon, Hui Tong Chua, Weike Zhang
  • BORON NITRIDE NANOSTRUCTURES
    Publication number: 20240199420
    Abstract: The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.
    Type: Application
    Filed: February 14, 2024
    Publication date: June 20, 2024
    Inventors: Sehrina Muzahid ESHON, Hui Tong CHUA, Weike ZHANG
  • BORON NITRIDE NANOSTRUCTURES
    Publication number: 20220009779
    Abstract: The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.
    Type: Application
    Filed: November 15, 2019
    Publication date: January 13, 2022
    Inventors: Sehrina Muzahid ESHON, Hui Tong CHUA, Weike ZHANG