Patents by Inventor Seigo Yamamoto

Seigo Yamamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150011379
    Abstract: A method for processing an edge of a catalyst-supporting honeycomb structure in an exhaust gas denitration apparatus, in which an exhaust gas denitration apparatus equipped with a denitration catalyst-supporting honeycomb structure in which a corrugated plate-like inorganic fiber sheet and a flat plate-like inorganic fiber sheet, each supporting thereon a denitration catalyst containing a silica sol, titania particles, and ammonium metavanadate as a whole primary denitration catalyst layer, are alternately laminated, the edge of gas inlet side of the denitration catalyst-supporting honeycomb structure having the whole primary denitration catalyst layer is dipped in a denitration catalyst-containing slurry for edge processing composed of a silica sol, titania particles or kaolin particles, and ammonium metatungstate to form a coating layer of the denitration catalyst-containing slurry in the edge of the honeycomb structure, and this is dried and then calcinated to form an edge secondary denitration catalyst la
    Type: Application
    Filed: December 17, 2012
    Publication date: January 8, 2015
    Applicant: HITACHI ZOSEN CORPORATION
    Inventors: Seigo Yamamoto, Susumu Hikazudani, Naoe Hino, Kana Shimizu
  • Publication number: 20140165517
    Abstract: A filter medium for an air filter unit for collecting dust from an airflow includes a pre-collection layer, a principal collection layer and an air-permeable cover layer. The pre-collection layer collects a part of the dust in the air flow. The principal collection layer includes a porous polytetrafluoroethylene film. The principal collection layer is positioned on a downstream side of the air flow relative to the pre-collection layer to collect dust that passes through the pre-collection layer. The air-permeable cover layer is positioned as an outermost surface layer of the filter medium on an upstream side of the air flow to allow dust in the air flow to pass through. The air-permeable cover layer is configured to suppress deformation of a surface of the filter medium caused by pressing force from an outside. Preferably, an air filter unit includes the filter medium in a zigzag shape.
    Type: Application
    Filed: August 30, 2012
    Publication date: June 19, 2014
    Applicant: Daikin Industries, Ltd.
    Inventors: Satoshi Hara, Li Bao, Kunihiko Inui, Seigo Yamamoto, Yoshiyuki Shibuya, Makoto Kobayashi, Hitoshi Niinuma
  • Publication number: 20040198127
    Abstract: A non-woven fabric of the present invention is composed primarily of entangled fluoropolymer fibers. In addition, the non-woven fabric of the present invention may be pressure and heat treated, or may be subject to elongation. This provides the non-woven fabric with superior mechanical characteristics.
    Type: Application
    Filed: December 18, 2003
    Publication date: October 7, 2004
    Inventors: Seigo Yamamoto, Katsutoshi Yamamoto, Jun Asano, Shinichi Chaen, Tomohisa Konishi
  • Publication number: 20040022012
    Abstract: This electrical insulating board 1 comprises a cloth substrate 3 and web layers 5. The web layers 5 made of fluororesin fibers and are stacked on both sides of the cloth substrate 3 and bonded there by entangling. In addition, to at least one side surface of web layers 5, heat treatment at a temperature of melting point of fluororesin fiber or more is applied under pressure.
    Type: Application
    Filed: May 27, 2003
    Publication date: February 5, 2004
    Inventors: Katsutoshi Yamamoto, Seigo Yamamoto, Shinichi Chaen, Jun Asano, Tomohisa Konishi
  • Publication number: 20030082973
    Abstract: There is provided an adhesive tape or sheet which makes it possible to maintain an adhesion strength for a long period of time, is excellent in sliding property and can be used cut to a desired size and shape in case of need. The adhesive tape or sheet or a cut tape thereof comprises a non-woven fabric of a fluorine-containing resin fiber having, partly or wholly on its one surface, an adhesive layer or a pressure sensitive adhesive layer through or not through a substrate layer.
    Type: Application
    Filed: October 29, 2002
    Publication date: May 1, 2003
    Applicant: DAIKIN INDUSTRIES, LTD.
    Inventors: Katsutoshi Yamamoto, Jun Asano, Seigo Yamamoto, Tomohisa Konishi, Shinichi Chaen
  • Patent number: 6333267
    Abstract: An active matrix type liquid crystal display, in which the reliability is enhanced by preventing the short-circuit and insulation breakdown of a gate insulating portion and the delay time of a gate bus line is shortened by reducing the resistivity of an interconnect film. The liquid crystal display of this type is manufactured by the steps of forming an interconnect/electrode film on a substrate by physical deposition; patterning the interconnect/electrode film; and anodic-oxidizing part or all of the interconnect/electrode film. In this method, the interconnect/electrode film is formed of an Al alloy containing at least one kind selected from a group consisting Fe, Co and rare earth elements in an amount of 0.1 to 10 at %; and the thickness of the anodic oxidation film is specified to be in the range of 200 Å or more.
    Type: Grant
    Filed: March 8, 1995
    Date of Patent: December 25, 2001
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Takashi Onishi, Eiji Iwamura, Seigo Yamamoto, Katsutoshi Takagi, Kazuo Yoshikawa
  • Patent number: 6033542
    Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.
    Type: Grant
    Filed: December 19, 1995
    Date of Patent: March 7, 2000
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi
  • Patent number: 6027792
    Abstract: The present invention relates to a coating film excellent in resistance to corrosive halogen-containing gas and halogen-containing plasma, a method for producing the same, and technology utilizing the same.More specifically, the coating film includes an aluminum oxide as an essential material and silicon-containing material, and the coating film has such a tightness that the content of the silicon-containing material is 5 wt % or less when reduced to silicon. In other word, the coating film has no peak of a half-value width of 5.degree. or less in X-ray diffraction. In still other word, the coating film is a little short of oxygen having an oxygen-to aluminum atomic ration of 1.3 or more to below 1.5. The present invention provides a laminated structure coated with such a coating film such as a window material for use in a vacuum apparatus, and a method for producing the window material.
    Type: Grant
    Filed: June 3, 1997
    Date of Patent: February 22, 2000
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Seigo Yamamoto, Katsuhiro Itayama, Kouki Ikeda, Jun Hisamoto, Takashi Onishi
  • Patent number: 5514909
    Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.
    Type: Grant
    Filed: July 27, 1994
    Date of Patent: May 7, 1996
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi
  • Patent number: RE43590
    Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: August 21, 2012
    Assignee: Kobelco Research Institute, Inc.
    Inventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi
  • Patent number: RE44239
    Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: May 28, 2013
    Assignee: Kobelco Research Institute, Inc.
    Inventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi