Abstract: A reward providing device comprises an acquiring section that acquires, when charging of the battery by a charging device is completed, battery state-of-charge information concerning a battery state of charge that is a state of charge of a battery provided to a moving body, and a reward providing section that provides a reward to the user of the moving body when the battery state of charge is less than or equal to a recommended upper limit state of charge that is an upper limit of a recommended charge rate set to be lower than a full charge, serving as a state of charge that is recommended.

Abstract: A desalination apparatus 12 (liquid treatment apparatus) includes a first water treatment unit 26 (liquid treatment unit) that includes a reverse osmosis membrane and in which a treated liquid is separated into a permeate that permeates the reverse osmosis membrane and a concentrate other than the permeate, a water recovery unit 28 (liquid recovery unit) that includes a reverse osmosis membrane and in which the concentrate is separated into a recovered liquid that permeates the reverse osmosis membrane and a waste liquid other than the recovered liquid, and a pressure increasing means that increases a liquid pressure of the concentrate, such that a state capable of separating into the recovered liquid and the waste liquid in the liquid recovery unit continues, and that directly feeds the concentrate from the liquid treatment unit to the liquid recovery unit.

Abstract: A compound represented by the following formula (1) is provided: wherein X represents a sulfur atom or —CH?CH—; A1 to A4 each independently represent a carbon atom or a nitrogen atom, and at least one of A1 to A4 is a nitrogen atom; R1 represents any one of a 1,2,3,4-tetrahydroquinolyl group (or a 3,4-dihydro-1(2H)-quinolyl group), a 3,4-dihydro-4,4-dimethyl-1(2H)-quinolyl group, a 2,3,4,5-tetrahydro-1H-1-benzazepinyl group, or a substituent represented by the following formula (2): wherein R4 represents a 2,3,4-trifluorophenyl group, a 4-iodophenyl group, a 2,3-difluorophenyl group, a 3,5-difluorophenyl group, a 5-fluoro-2-methylphenyl group, a 3-pentafluorosulfanylphenyl group, a 2,6-dimethylphenyl group, a 4-benzyloxyphenyl group, a 3,5-bis(trifluoromethyl)biphenyl group, a 4-tert-butylphenyl group, a 3-methoxyphenyl group, an unsubstituted or substituted pyridyl group, or an unsubstituted or substituted naphthyl group; R5 represents a hydrogen atom, a lower alkyl group, a lower alkenyl group, a l

Abstract: It is an object of the present invention to provide a compound inhibiting the binding between ALS-related mutant SOD1 and Derlin-1, a medicament comprising the compound, and a method for treating ALS by administering the medicament to a patient.

Abstract: According to one embodiment, a digital protection relay includes an auxiliary transformer (2) which decreases a voltage of an electrical signal from a main circuit transformer (1) to a predetermined voltage; a detection resistance circuit (20) including a ?-type or T-type circuit including an input connected to an output of the auxiliary transformer (2); an analog detection circuit (3) which is connected to an output of the detection resistance circuit (20) and detects a quantity of electricity of an electrical signal from the auxiliary transformer (2); an A/D conversion circuit (4) connected to the analog detection circuit (3); a central processing device 5 which is connected to the A/D conversion circuit (5) and performs a protection operation; and a trip output contact (9) which is closed by processing of the central processing device (5) and operates an external breaker (21).

Abstract: According to one embodiment, an information processing apparatus includes a capture module which acquires video data and audio data output from a first module to a second module, a time stamp module which respectively adds time information to the video data and audio data acquired by the capture module, an effect module which performs correction processing of at least one of the video data and audio data acquired by the capture module, and a synchronization output module which synchronizes and outputs the video data and audio data at least one of which has undergone the correction processing by the effect module to the second module based on the time information added by the time stamp module.

Abstract: According to one embodiment, a content playback system includes a first electronic apparatus including a first drive and a second electronic apparatus including a second drive. The first electronic apparatus includes a content transmitter. The content transmitter is configured to transmit content read from a storage medium by the first drive to the second electronic apparatus. The second electronic apparatus includes a remote content reproducer. The remote content reproducer is configured to play back the content transmitted from the first electronic apparatus using a content reproducer configured to play back content read from a storage medium by the second drive.

Abstract: The folding tool has one side-plate (1a) and the other side-plate (1b). A part of the rear side of the other side-plate (1b) or an arm-like plate (2) attached as a separate body is used as an inwardly pressing member, and a projection (3) is provided at the head of the arm-like plate (2). The base end of the body (5) having at its end a rear recess (6) is foldably pivotally attached by means of a support shaft (4) to the base ends of both the one side-plate and the other side-plate. The projection (3) and the recess (6) of the body (5) are engaged with and locked to each other.

Abstract: According to one embodiment, an information processing apparatus is configured to play back video content data. The information processing apparatus comprises a display device and a control module. The display device is configured to display video of video content data being played back. The control module is configured to display a graphical user interface including a first button associated with the video content data being played back and a second button indicative of an electronic device on a screen of the display device, and to transfer the video content data, which is associated with the first button and is being played back, to the electronic device in response to a pointing operation by a user for associating the first button with the second button.

Abstract: According to one embodiment, an information processing apparatus is configured to execute player software for decoding encoded video content data received from a server. The information processing apparatus includes a display device, a capture module, an encoder, and a transfer module. The display device is configured to display video of the decoded video content data. The capture module is configured to capture the decoded video content data. The encoder is configured to encode the captured video content data. The transfer module is configured to transfer the encoded video content data to an electronic device configured to play back video content data received from an external device.

Abstract: A contents player including: a reading unit which accesses data carrier and reads out contents including multimedia data and a script from the data carrier; a playing unit which plays the multimedia data included in the contents; an interpreting unit which interprets the script included in the contents; an access unit which accesses an internal or external storing device; an acquiring unit which acquires an access ID of the contents from the read contents or the data carrier when the script includes an access instruction description which instructs access to a specific storing region in the storing device: and a determining unit which determines whether the access to the specific storing region is permitted or not, on the basis of the acquired access ID.

Abstract: A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

Abstract: A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment step of maintaining the wafer in an oxygen contained atmosphere at a temperature that is not lower than 1300° C. but less than a silicon melting point for 6 to 36 hours to change the first and the second ion-implanted layers into a BOX layer, a gas containing chlorine that is not less than 0.1 volume % but less than 1.0 volume % is mixed into an atmosphere during temperature elevation in the high-temperature heat treatment.

Abstract: According to one embodiment, an information processing apparatus includes a capture module which acquires video data and audio data output from a first module to a second module, a time stamp module which respectively adds time information to the video data and audio data acquired by the capture module, an effect module which performs correction processing of at least one of the video data and audio data acquired by the capture module, and a synchronization output module which synchronizes and outputs the video data and audio data at least one of which has undergone the correction processing by the effect module to the second module based on the time information added by the time stamp module.

Abstract: A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that makes an angle of greater than zero degree and less than 9.5 degrees or an angle of greater than 19 degrees with the principal face. An SOI wafer prepared by forming a buried oxide layer in a silicon wafer includes a principal face, end region, and tapered region that are substantially the same as those described above. A method for manufacturing an SOI wafer includes the steps of implanting oxygen ions into a silicon wafer; and heat-treating the resulting silicon wafer such that a buried oxide layer is formed in the silicon wafer.

Abstract: A content reproduction apparatus including reproduction unit configured to reproduce content data item stored in recording medium storing first server identifier and content data item including destination identifier, reads first server identifier from recording medium, to store first server identifier in table, certifies first server corresponding to first sever identifier, receives first server policy from first server being certified, first server policy including second server identifier redirecting to second server, to store second server identifier in table, certifies second server, acquires destination identifier while reproduction unit reproduces content data item, determines whether destination identifier being acquired is equal to first identifier stored in table, and accesses to second server, when at least destination identifier is equal to first identifier and second server is certified.

Abstract: This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 ? or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-?m square area of 4 ? rms or less.

Abstract: A content playback apparatus includes an SKF selecting unit that selects one segment key file from plural segment key files recorded in a DVD media at a time of playback of a content of the sequence key section, a data selecting unit that selects each content corresponding to a segment number of each key entry registered in the selected segment key file, a moving picture data decrypting unit that decrypts the selected moving picture data by a segment key corresponding to the segment number, and a decoder that plays back the decrypted moving picture data.

Abstract: Many techniques including safety lockable mechanisms have been proposed to improve safety of knives; however, to close a knife according to the techniques, it requires the user to place their finger on the line of rotation of a body of the knife, rendering it unfavorable from the viewpoint of safety, and in addition, the knives of the techniques have insufficient strength and in turn are less safe. The object of the invention is to eliminate such drawbacks that are also common to key holders and holders for small-sized tools such as screwdrivers and saws. The folding tool has one side-plate (1a) and the other side-plate (1b). A part of the rear side of the other side-plate (1b) or an arm-like plate (2) attached as a separate body is used as an inwardly pressing member, and a projection (3) is provided at the head of the arm-like plate (2).

Abstract: This method for manufacturing a SIMOX wafer includes: heating a silicon wafer to 300° C. or more and implanting oxygen ions so as to form a high oxygen concentration layer within the silicon wafer; subjecting the silicon wafer to a cooling to less than 300° C. and an implanting of oxygen ions so as to form an amorphous layer; and subjecting the silicon wafer to a heat-treating in a mixed gas atmosphere containing oxygen so as to form a buried oxide layer. In the forming of the buried oxide layer, a starting temperature is less than 1350° C. and a maximum temperature is 1350° C. or more. This SIMOX wafer is manufactured by the above method and includes a BOX layer and a SOI layer on the BOX layer. The BOX layer has a thickness of 1300 ? or more and a breakdown voltage of 7 MV/cm or more, and the surface of the SOI layer and the interface between the SOI layer and the BOX layer have a roughness over a 10-?m square area of 4 ? rms or less.