Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-x,Gax)4N1-y (0<x?0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.

Abstract: To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25<x<0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the Co2Fe(GaxGe1-x) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract: A ferromagnetic tunnel junction structure comprising a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the tunnel barrier layer includes a crystalline non-magnetic material having constituent elements that are similar to those of an crystalline oxide that has spinel structure as a stable phase structure; the non-magnetic material has a cubic structure having a symmetry of space group Fm-3m or F-43m in which atomic arrangement in the spinel structure is disordered; and an effective lattice constant of the cubic structure is substantially half of the lattice constant of the oxide of the spinel structure.

Abstract: [Problem to be Solved] To realize a spintronics device with high performance, it is an object of the present invention to provide a Co2Fe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. [Solution] A Co2Fe(GaxGe1-x) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25<x<0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the Co2Fe(GaxGe1-x) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

Abstract: In an image forming apparatus, a plurality of light emitting device array units for drawing image data on a photoconductor are arranged in a main scanning direction corresponding to an axial direction of the photoconductor with staggered positioning in a sub-scanning direction. The image forming apparatus includes a ratio setting unit configured to set a ratio of fine size adjustment for finely adjusting a size of the image data, a computing unit configured to compute a displacement of the image data responsive to the ratio of fine size adjustment set by the ratio setting unit, and a fine size adjustment unit configured to change intervals of occurrences of line synchronizing signals in response to the computation by the computing unit.

Abstract: In an image forming apparatus, a plurality of light emitting device array units for drawing image data on a photoconductor are arranged in a main scanning direction corresponding to an axial direction of the photoconductor with staggered positioning in a sub-scanning direction. The image forming apparatus includes a ratio setting unit configured to set a ratio of fine size adjustment for finely adjusting a size of the image data, a computing unit configured to compute a displacement of the image data responsive to the ratio of fine size adjustment set by the ratio setting unit, and a fine size adjustment unit configured to change intervals of occurrences of line synchronizing signals in response to the computation by the computing unit.

Abstract: On a substrate at a temperature of 120 to 240° C., Fe and Pt monatomic layers are alternately laminated. The magnetic multilayer film obtained by such a method has an L10 ordered structure so as to exhibit a high magnetic anisotropy energy constant, a (001) surface parallel to the substrate surface, and a high perpendicular magnetic anisotropy, while its coercive force in a direction perpendicular to the substrate surface and the squareness ratio of its magnetization curve in a direction perpendicular to the substrate surface are large, so that it is usable as a magnetic recording film for a magnetic recording medium and the like. Also, since the magnetic multilayer film is formed while the substrate temperature is 120 to 240° C., the temperature load on the substrate or the like is lowered as compared with conventional making methods in which the substrate temperature is about 500° C.

Abstract: On a substrate at a temperature of 120 to 240° C., Fe and Pt monatomic layers are alternately laminated. The magnetic multilayer film obtained by such a method has an L10 ordered structure so as to exhibit a high magnetic anisotropy energy constant, a (001) surface parallel to the substrate surface, and a high perpendicular magnetic anisotropy, while its coercive force in a direction perpendicular to the substrate surface and the squareness ratio of its magnetization curve in a direction perpendicular to the substrate surface are large, so that it is usable as a magnetic recording film for a magnetic recording medium and the like. Also, since the magnetic multilayer film is formed while the substrate temperature is 120 to 240° C., the temperature load on the substrate or the like is lowered as compared with conventional making methods in which the substrate temperature is about 500° C.

Abstract: A system is for sorting an article on shipping the article. The article has a tag label in which a symbol is written. The article has an ID tag in which tag information is written. The article is conveyed on a conveyer. A first detector detects the article conveyed on the conveyer to produce a first detection signal. A second detector is located downstream of the first detector and detects the article conveyed on the conveyer to produce a second detection signal. A control device controls a symbol reading device in response to the first detection signal to make the symbol reading device read the symbol as read-out symbol information out of the tag label. The control device controls an ID tag writing device in response to the second detection signal to make the ID tag writing device write the tag information in the ID tag in accordance with the read-out symbol information. The article is sorted on the basis of the tag information written in the ID tag.