Abstract: According to one embodiment, a substrate processing apparatus comprises a chamber for a substrate that has a target film thereon. The apparatus includes a first gas introducing unit to introduce a precursor gas into the chamber, a second gas introducing unit that introduces a etching gas for etching the target film into the chamber, and a controller configured to control the first gas introducing unit and the second gas introducing unit to cause the first gas and the second gas to be alternately introduced to the chamber.

Abstract: In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.

Abstract: According to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90° to the second surface.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.

Abstract: A pattern-forming method includes forming a first film above a material to be processed, processing the first film into a pattern to be formed in the material to be processed, providing a second film on the first film and the material to be processed, supplying a precursor containing at least one of a metal material or a semiconductor material to the second film, removing the first film, and processing the material to be processed using the second film impregnated with at least one of the metal material and the semiconductor material, as a mask.

Abstract: According to one embodiment, a pattern forming method includes supplying, onto an under layer, a self-organization material including a block copolymer which includes a first polymer and a second polymer, and a third polymer having a molecular structure with oxygen attached to a cyclic structure, wherein the third polymer is bonded to the first polymer, and phase-separating the block copolymer to form a phase-separation pattern on the under layer.

Abstract: A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.

Abstract: In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.

Abstract: In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.

Abstract: According to an embodiment, a photosensitive composition is provided. The photosensitive composition contains a photosensitive material. The photosensitive composition, when a whole amount of the composition is 100 pts. mass, a sum total of values each obtained by multiplying a SP value, which is a solubility parameter, by a mass percentage of a photopolymerizable monomer contained in the composition is any value within a range of 17 to 20 [(J/cm3)1/2].

Abstract: A pattern forming method includes forming a guide pattern on a substrate including first and second regions and applying a directed self-assembly material including a first and a second polymer portion to the substrate. The first region is irradiated with an energy beam. The substrate is subjected to a heating process after irradiation and the directed self-assembly material in the second region separates into a first polymer phase and a second polymer phase. The directed self-assembly material is removed from the first region after irradiation.

Abstract: A template defect inspection method using an optical system includes emitting linearly polarized light to a template having a metal film formed on at least part of a concave-convex structure that is formed on a substrate and that has a line-and-space pattern, acquiring information on a polarization-rotated component, which is different from linearly polarized light incident on the template, of light reflected by the template in accordance with the emission thereto, converting the acquired information on the polarization-rotated component into an electrical signal, and processing the electrical signal.

Abstract: A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and first and second interconnections on a first surface of the stacked body. The first and second electrode layers have first and second end surfaces respectively in the first surface. The first interconnection is electrically connected to the first electrode layer through a first region of the first end surface; and the second interconnection is electrically connected to the second electrode layer through a second region of the second end surface. The first and second interconnections extend in a first direction on the first surface. The first and second regions are arranged in a second direction crossing the first direction with a crossing angle smaller than 90 degrees. The first region and the second region each have a boundary along the second direction.

Abstract: According to one embodiment, a pattern forming method includes supplying, onto an under layer, a self-organization material including a block copolymer which includes a first polymer and a second polymer, and a third polymer having a molecular structure with oxygen attached to a cyclic structure, wherein the third polymer is bonded to the first polymer, and phase-separating the block copolymer to form a phase-separation pattern on the under layer.

Abstract: A pattern inspection apparatus according to an embodiment includes an image capture and an output part. The image capture captures an image of a second pattern of an inspection target object obtained by enlarging the inspection target object having a first pattern. The output part outputs position information of the first or second pattern corresponding to divergent portions between a reference data generated from design data of the first pattern and a captured data generated by the image capture, other than prediction positions of first defects occurring when the inspection target object is enlarged.

Abstract: A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and first and second interconnections on a first surface of the stacked body. The first and second electrode layers have first and second end surfaces respectively in the first surface. The first interconnection is electrically connected to the first electrode layer through a first region of the first end surface; and the second interconnection is electrically connected to the second electrode layer through a second region of the second end surface. The first and second interconnections extend in a first direction on the first surface. The first and second regions are arranged in a second direction crossing the first direction with a crossing angle smaller than 90 degrees. The first region and the second region each have a boundary along the second direction.

Abstract: In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization, The material further includes a photo-acid generator as a polymerization initiator.

Abstract: A pattern forming method includes forming a guide pattern on a substrate including first and second regions and applying a directed self-assembly material including a first and a second polymer portion to the substrate. The first region is irradiated with an energy beam. The substrate is subjected to a heating process after irradiation and the directed self-assembly material in the second region separates into a first polymer phase and a second polymer phase. The directed self-assembly material is removed from the first region after irradiation.

Abstract: In one embodiment, a template producing method includes coating a first template having a first pattern with a curable material, and curing the material. The method further includes producing a second template having a second pattern corresponding to the first pattern by peeling the cured material from the first template. The method further includes enlarging the second template, and pasting, on the enlarged second template, a substrate that holds a shape of the second template.