Abstract: Various embodiments generally relate to a power distribution network and a semiconductor device, which may include: a plurality of chip pads; a first distribution layer in which a plurality of first conductive lines having rectangular shapes of different sizes, respectively, are disposed; a second distribution layer in which a plurality of second conductive lines including a central cross-shaped conductive line and L-shaped conductive lines open toward respective corners of the second distribution layer are disposed; and a redistribution layer electrically coupling chip pads to which power is applied among the plurality of chip pads and the first conductive lines of the first distribution layer.

Abstract: A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.

Abstract: An electronic device is provided. The electronic device includes a first memory, a second memory, and a control module configured, when a file storing event occurs, to divide a file inputted from outside of the electronic device into a plurality of files, to store a portion of the divided files in the first memory, and to store another portion of the divided files in the second memory, wherein one of the first memory and the second memory includes a header notifying a storage location of the divided files.

Abstract: A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.

Abstract: An electronic device is provided. The electronic device includes at least one first memory being nonvolatile and a processor configured to read a file from the first memory or to write a file on the first memory. The first memory stores instructions, the instructions, when executed, causing the processor to provide a software layer structure including a first virtual file system layer configured to interface with an application program layer, a compressed file system layer configured to compress at least a part of data of the written file or to decompress at least a part of data of the read file, a second virtual file system layer configured to manage the written or read file, and a first file system layer configured to read at least a part of the file from the first memory or to write at least a part of the file on the first memory.

Abstract: A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.

Abstract: A memory device, system, and/or method are provided for performing a page state informing function. The memory device may compare one or more row addresses received along with a command, determine the page open/close state according to a page hit or miss generated as a result of comparison, count read or write commands with respect to pages corresponding to a same row address, and determine the page open/close state according to a read or write command number generated as a result of counting. The memory device may determine a page open/close state with respect to a corresponding page based on a page hit/miss and a read or write command number and output a flag signal. The memory device may provide the page open/close state for each channel. A memory controller may establish different page open/close policies for each channel.

Abstract: An electronic device is provided. The electronic device includes at least one first memory being nonvolatile and a processor configured to read a file from the first memory or to write a file on the first memory. The first memory stores instructions, the instructions, when executed, causing the processor to provide a software layer structure including a first virtual file system layer configured to interface with an application program layer, a compressed file system layer configured to compress at least a part of data of the written file or to decompress at least a part of data of the read file, a second virtual file system layer configured to manage the written or read file, and a first file system layer configured to read at least a part of the file from the first memory or to write at least a part of the file on the first memory.

Abstract: A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.

Abstract: A memory device, system, and/or method are provided for performing a page state informing function. The memory device may compare one or more row addresses received along with a command, determine the page open/close state according to a page hit or miss generated as a result of comparison, count read or write commands with respect to pages corresponding to a same row address, and determine the page open/close state according to a read or write command number generated as a result of counting. The memory device may determine a page open/close state with respect to a corresponding page based on a page hit/miss and a read or write command number and output a flag signal. The memory device may provide the page open/close state for each channel. A memory controller may establish different page open/close policies for each channel.

Abstract: Provided is a method and apparatus for controlling a plurality of memory devices. According to various embodiments of the present disclosure, there is provided an electronic device. The electronic device includes a first memory and a second memory, and a processor that is functionally connected with the first memory and the second memory. The processor is configured to determine at least one state associated with the electronic device, and allocate at least a partial area of one of the first memory and the second memory to at least some data of at least one process to be executed in the electronic device based on the at least one state. Other embodiments are possible.

Abstract: This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures. The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalls of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs.

Abstract: An electronic device is provided. The electronic device includes a first memory, a second memory, and a control module configured, when a file storing event occurs, to divide a file inputted from outside of the electronic device into a plurality of files, to store a portion of the divided files in the first memory, and to store another portion of the divided files in the second memory, wherein one of the first memory and the second memory includes a header notifying a storage location of the divided files.

Abstract: The present disclosure relates to an apparatus and method capable of carrying out data movement in a memory of a terminal. The apparatus includes a processor configured to transmit a command for data movement and address information for data movement in a memory to the memory, and the memory configured to perform the data movement in units of word line in the memory by using the address information, in response to reception of the command for moving the data.

Abstract: An apparatus and a method capable of selectively extending a memory in a terminal are provided. The apparatus includes a socket unit into which an external memory having a built-in Random Access Memory (RAM) is inserted, and a controller that performs a control operation for moving data stored in a RAM of the terminal to the RAM of the external memory and for securing available space of the RAM of the terminal, when the external memory having the built-in RAM is inserted into the socket unit.

Abstract: A memory system includes a memory cell array having a plurality of memory sectors. Each memory sector includes a plurality of memory cells. The memory system further includes a controller configured to write data to the memory cell array in response to a writing signal. The controller is further configured to refresh a memory sector among the plurality of memory sectors each time a writing signal is provided. When N (N is a positive integer) memory cells are programmed, a programming current is less than or equal to about 0.75 mA*N.

Abstract: This technology provides a semiconductor device and a method of fabricating the same, which may reduce parasitic capacitance between adjacent conductive structures. The method of fabricating a semiconductor device may include forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers over sidewalls of the contact holes, forming first plugs recessed into the respective contact holes, forming air gaps by removing the sacrificial spacers, forming capping structures capping the air gaps while exposing top surfaces of the first plugs, and forming second plugs over the first plugs.

Abstract: The present disclosure relates to an apparatus and method capable of carrying out data movement in a memory of a terminal. The apparatus includes a processor configured to transmit a command for data movement and address information for data movement in a memory to the memory, and the memory configured to perform the data movement in units of word line in the memory by using the address information, in response to reception of the command for moving the data.

Abstract: A memory expanding device includes an input and output part coupleable to an external optical interface, a controller coupled to the input and output part through a first internal optical interface, a main memory module coupled to the controller through a second internal optical interface, and a sub-memory module coupled to the controller through a first internal electrical interface.

Abstract: A method for fabricating memory device includes forming a bit line pattern including a first conductive layer and a hard mask stacked over a substrate, forming a sacrificial layer on sidewalls of the bit line pattern, forming a second conductive layer in contact with the sacrificial layer and adjacent to the bit line pattern, recessing the second conductive layer, forming an air gap between the recessed second conductive layer and the first conductive layer by removing the sacrificial layer, and forming an air gap capping layer on sidewalls of the hard mask to cap entrance of the air gap.