Patents by Inventor Seishi Murakami
Seishi Murakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240069641Abstract: An information processing apparatus according to an embodiment of the present technology includes: a threshold value control unit. The threshold value control unit controls, on the basis of three-dimensional position information of each of a first finger and a second finger acquired from a detection result of a sensor, a threshold value relating to determination of a gesture using at least one of the first finger and the second finger. As a result, it is possible to perform gesture determination with high accuracy.Type: ApplicationFiled: July 13, 2020Publication date: February 29, 2024Inventors: ATSUSHI IRIE, KENJI GOTOH, TETSUO IKEDA, YOHSUKE KAJI, EISUKE FUJINAWA, SEISHI TOMONAGA, TADAYOSHI MURAKAMI
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Publication number: 20220341037Abstract: A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.Type: ApplicationFiled: September 15, 2020Publication date: October 27, 2022Inventors: Seishi MURAKAMI, Tsuneyuki OKABE, Eiichi KOMORI
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Patent number: 11348794Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.Type: GrantFiled: June 6, 2019Date of Patent: May 31, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Hideo Nakamura, Yosuke Serizawa, Yoshikazu Ideno, Hiroaki Ashizawa, Takaya Shimizu, Seishi Murakami
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Patent number: 10950417Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.Type: GrantFiled: June 11, 2018Date of Patent: March 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Einosuke Tsuda, Seishi Murakami, Takayuki Kamaishi
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Patent number: 10546753Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.Type: GrantFiled: July 18, 2018Date of Patent: January 28, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Hideaki Yamasaki, Takamichi Kikuchi, Seishi Murakami
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Publication number: 20190378723Abstract: A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.Type: ApplicationFiled: June 6, 2019Publication date: December 12, 2019Inventors: Hideo Nakamura, Yosuke Serizawa, Yoshikazu Ideno, Hiroaki Ashizawa, Takaya Shimizu, Seishi Murakami
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Patent number: 10504740Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.Type: GrantFiled: July 18, 2018Date of Patent: December 10, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Hideaki Yamasaki, Takamichi Kikuchi, Seishi Murakami
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Patent number: 10221478Abstract: A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.Type: GrantFiled: February 10, 2014Date of Patent: March 5, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Kensaku Narushima, Daisuke Toriya, Kentaro Asakura, Seishi Murakami
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Publication number: 20190027371Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.Type: ApplicationFiled: July 18, 2018Publication date: January 24, 2019Inventors: Hideaki YAMASAKI, Takamichi KIKUCHI, Seishi MURAKAMI
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Publication number: 20180366303Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.Type: ApplicationFiled: June 11, 2018Publication date: December 20, 2018Inventors: Einosuke TSUDA, Seishi MURAKAMI, Takayuki KAMAISHI
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Patent number: 9984892Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.Type: GrantFiled: May 16, 2017Date of Patent: May 29, 2018Assignee: Tokyo Electron LimitedInventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
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Publication number: 20170338120Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.Type: ApplicationFiled: May 16, 2017Publication date: November 23, 2017Inventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
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Patent number: 9620370Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.Type: GrantFiled: December 16, 2014Date of Patent: April 11, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Seishi Murakami, Takaya Shimizu, Satoshi Wakabayashi
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Patent number: 9349642Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.Type: GrantFiled: December 15, 2014Date of Patent: May 24, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Seishi Murakami, Takaya Shimizu, Satoshi Wakabayashi
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Publication number: 20160083837Abstract: A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.Type: ApplicationFiled: February 10, 2014Publication date: March 24, 2016Inventors: Kensaku NARUSHIMA, Daisuke TORIYA, Kentaro ASAKURA, Seishi MURAKAMI
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Publication number: 20150179462Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.Type: ApplicationFiled: December 16, 2014Publication date: June 25, 2015Inventors: Seishi MURAKAMI, Takaya SHIMIZU, Satoshi WAKABAYASHI
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Publication number: 20150179518Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.Type: ApplicationFiled: December 15, 2014Publication date: June 25, 2015Inventors: Seishi MURAKAMI, Takaya SHIMIZU, Satoshi WAKABAYASHI
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Patent number: 8106335Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).Type: GrantFiled: July 1, 2005Date of Patent: January 31, 2012Assignee: Tokyo Electron LimitedInventors: Seishi Murakami, Kunihiro Tada
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Patent number: 8021717Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.Type: GrantFiled: January 12, 2009Date of Patent: September 20, 2011Assignee: Tokyo Electron LimitedInventors: Seishi Murakami, Masaki Koizumi, Hiroaki Ashizawa, Masato Koizumi
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Publication number: 20100162956Abstract: Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.Type: ApplicationFiled: August 4, 2006Publication date: July 1, 2010Inventors: Seishi Murakami, Kei Ogose