Patents by Inventor Seishi Murakami

Seishi Murakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10221478
    Abstract: A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.
    Type: Grant
    Filed: February 10, 2014
    Date of Patent: March 5, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kensaku Narushima, Daisuke Toriya, Kentaro Asakura, Seishi Murakami
  • Publication number: 20190027371
    Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.
    Type: Application
    Filed: July 18, 2018
    Publication date: January 24, 2019
    Inventors: Hideaki YAMASAKI, Takamichi KIKUCHI, Seishi MURAKAMI
  • Publication number: 20180366303
    Abstract: A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.
    Type: Application
    Filed: June 11, 2018
    Publication date: December 20, 2018
    Inventors: Einosuke TSUDA, Seishi MURAKAMI, Takayuki KAMAISHI
  • Patent number: 9984892
    Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: May 29, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
  • Publication number: 20170338120
    Abstract: Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.
    Type: Application
    Filed: May 16, 2017
    Publication date: November 23, 2017
    Inventors: Takashi Kobayashi, Seishi Murakami, Takashi Sakuma, Masahiko Tomita, Takamichi Kikuchi, Akitaka Shimizu, Takayuki Kamaishi, Einosuke Tsuda
  • Patent number: 9620370
    Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: April 11, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Seishi Murakami, Takaya Shimizu, Satoshi Wakabayashi
  • Patent number: 9349642
    Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: May 24, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Seishi Murakami, Takaya Shimizu, Satoshi Wakabayashi
  • Publication number: 20160083837
    Abstract: A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.
    Type: Application
    Filed: February 10, 2014
    Publication date: March 24, 2016
    Inventors: Kensaku NARUSHIMA, Daisuke TORIYA, Kentaro ASAKURA, Seishi MURAKAMI
  • Publication number: 20150179462
    Abstract: A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl4 gas as a Ti source and a H2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.
    Type: Application
    Filed: December 16, 2014
    Publication date: June 25, 2015
    Inventors: Seishi MURAKAMI, Takaya SHIMIZU, Satoshi WAKABAYASHI
  • Publication number: 20150179518
    Abstract: A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSix film on the substrate. A portion of the TiSix film in a bottom of the contact hole corresponds to the contact layer.
    Type: Application
    Filed: December 15, 2014
    Publication date: June 25, 2015
    Inventors: Seishi MURAKAMI, Takaya SHIMIZU, Satoshi WAKABAYASHI
  • Patent number: 8106335
    Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: January 31, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Seishi Murakami, Kunihiro Tada
  • Patent number: 8021717
    Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: September 20, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Seishi Murakami, Masaki Koizumi, Hiroaki Ashizawa, Masato Koizumi
  • Publication number: 20100162956
    Abstract: Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess 12a is formed in an intermediate portion between the central portion and the peripheral portion of a wafer support surface of the susceptor 12. Due to the provision of the recess, the substrate heating effect by thermal radiation from the susceptor is suppressed in the intermediate portion. The geometrical dimension of the recess is determined taking the chamber internal pressure into consideration.
    Type: Application
    Filed: August 4, 2006
    Publication date: July 1, 2010
    Inventors: Seishi Murakami, Kei Ogose
  • Publication number: 20090211526
    Abstract: The present invention relates to a processing apparatus for performing a film-deposition process or the like for an object to be processed (such as a semiconductor wafer) by means of a source gas and a reactive gas. The processing apparatus includes: a processing vessel (22) that contains therein an object to be processed (W); a source gas supply system (50) that selectively supplies a source gas into the processing vessel; a reactive gas supply system (52) that selectively supplies a reactive gas into the processing vessel; and a vacuum evacuating system (36) having vacuum pumps (44, 46), the system exhausting an atmosphere in the processing vessel to form a vacuum.
    Type: Application
    Filed: May 4, 2009
    Publication date: August 27, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masayuki TANAKA, Kouzo KAI, Seishi MURAKAMI, Tetsuya MIYASHITA
  • Publication number: 20090142513
    Abstract: A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptor 2 in a chamber 1 to a predetermined temperature. After this, the interior of the chamber 1 containing no wafers W is cleaned by discharging Cl2 gas as a cleaning gas from a shower head 10 into the chamber 1. During this cleaning, the temperature of each of the susceptor 2, the shower head 10, and the wall portion of the chamber 1 is independently controlled so that the temperature of the susceptor 2 is not lower than the decomposition start temperature of Cl2 gas and the temperature of the shower head 10 and the wall portion of the chamber 1 is not higher than the decomposition start temperature.
    Type: Application
    Filed: January 12, 2009
    Publication date: June 4, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Seishi MURAKAMI, Masaki Koizumi, Hiroaki Ashizawa, Masato Koizumi
  • Publication number: 20080302781
    Abstract: A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).
    Type: Application
    Filed: July 1, 2005
    Publication date: December 11, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Seishi Murakami, Kunihiro Tada
  • Patent number: 7351291
    Abstract: A semiconductor processing system includes a load lock chamber and first to third process chambers connected to an airtight transfer chamber. The second process chamber is disposed below the first process chamber and overlaps with the first process chamber. The third process chamber is disposed at a position laterally distant from the first process chamber and leveled with the first process chamber. First to third exhaust ports are formed in the bottoms of the first to third process chambers, and connected to respective vacuum exhaust sections through first to third exhaust lines. A transfer mechanism is disposed in the transfer chamber to transfer a target substrate to and from the load lock chamber and the first to third process chambers.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: April 1, 2008
    Assignee: Tokyo Electron Limited
    Inventor: Seishi Murakami
  • Publication number: 20080057344
    Abstract: Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.
    Type: Application
    Filed: December 27, 2004
    Publication date: March 6, 2008
    Inventors: Seishi Murakami, Kunihiro Tada
  • Publication number: 20060231032
    Abstract: The object of the present invention is to provide a plasma chemical vapor deposition method and apparatus capable of preventing local electric discharge at the peripheral portion of the susceptor. Prior to the film formation, a gas is supplied into an evacuated chamber, and a substrate is supported on substrate support pins, which is arranged in the susceptor and are in their elevated position, so that the substrate is preheated; thereafter the supply of the gas is stopped, the chamber is evacuated, and the substrate support pins are lowered so that the substrate is placed on the susceptor; and thereafter a gas is supplied into the chamber and the substrate is further preheated. Thereafter, plasma is generated in the chamber, and the film-forming gas is supplied into the chamber, to form a film on the substrate.
    Type: Application
    Filed: December 29, 2005
    Publication date: October 19, 2006
    Inventors: Seishi Murakami, Kunihiro Tada
  • Publication number: 20060127601
    Abstract: A titanium silicide film is formed on an Si wafer. At first, a plasma process using an RF is performed on the Si wafer. Then, a Ti-containing source gas is supplied onto the Si wafer processed by the plasma process and plasma is generated to form a Ti film. At this time, the Ti silicide film is formed by a reaction of the Ti film with Si of the Si wafer. The plasma process is performed on the Si wafer while the Si wafer is supplied with a DC bias voltage having an absolute value of 200V or more.
    Type: Application
    Filed: February 10, 2006
    Publication date: June 15, 2006
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Seishi Murakami, Masato Morishima, Kensaku Narushima