Patents by Inventor Seo-Jin JEONG

Seo-Jin JEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9972717
    Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: May 15, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yeong-Jong Jeong, Jeong-Yun Lee, Geo-Myung Shin, Dong-Suk Shin, Si-Hyung Lee, Seo-Jin Jeong
  • Publication number: 20160343859
    Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is defined by a field insulating layer, extends along a first direction, and includes a first portion and a second portion; a gate electrode which extends along a second direction different from the first direction and is formed on the first portion; and a first source/drain region which is formed around the second portion protruding further upward than a top surface of the field insulating layer and contacts the field insulating layer, wherein the second portion is disposed on both sides of the first portion in the first direction and is more recessed than the first portion, a top surface of the first portion and a top surface of the second portion protrude further upward than the top surface of the field insulating layer, and a profile of sidewalls of the second portion is continuous.
    Type: Application
    Filed: August 4, 2016
    Publication date: November 24, 2016
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yeong-Jong JEONG, Jeong-Yun Lee, Geo-Myung Shin, Dong-Suk Shin, Si-Hyung Lee, Seo-Jin Jeong
  • Patent number: 9431478
    Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: August 30, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yeong-Jong Jeong, Jeong-Yun Lee, Geo-Myung Shin, Dong-Suk Shin, Si-Hyung Lee, Seo-Jin Jeong
  • Publication number: 20150318399
    Abstract: A semiconductor device includes a first multi-channel active pattern defined by a field insulating layer and extending along a first direction, the first multi-channel active pattern including a first portion having a top surface protruding further in an upward direction than a top surface of the field insulating layer and a second portion on both sides of the first portion, the second portion having sidewalls with a continuous profile and a top surface protruding further in the upward direction than the top surface of the field insulating layer and protruding in the upward direction less than the top surface of the first portion, a gate electrode on the first portion of the first multi-channel active pattern and extending along a second direction different from the first direction, and a first source/drain region on the second portion of the first multi-channel active pattern and contacting the field insulating layer.
    Type: Application
    Filed: January 20, 2015
    Publication date: November 5, 2015
    Inventors: Yeong-Jong JEONG, Jeong-Yun LEE, Geo-Myung SHIN, Dong-Suk SHIN, Si-Hyung LEE, Seo-Jin JEONG