Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

Abstract: A method for controlling operation of a hydraulic idle stop and go (ISG) system using an electro hydraulic power steering (EHPS) system includes measuring a pressure in an accumulator, a steering angle, and a steering angular velocity; determining whether the measured pressure in the accumulator is less than an absolute value of a first reference pressure; determining whether the measured steering angle is less than an absolute value of a reference angle when the measured pressure in the accumulator is less than the absolute value of the first reference pressure; determining whether the measured steering angular velocity is less than an absolute value of a reference angular velocity when the measured steering angle is less than the absolute value of the reference angle; and opening a solenoid valve when the measured steering angular velocity is less than the absolute value of the reference angular velocity.

Abstract: A memory device includes a variable resistance layer and a selection device layer electrically connected to the variable resistance layer. The memory device further included a chalcogenide switching material that reduces leakage current and has, for example, a composition according to chemical formula 1 below, [GeXSiY(AsaTe1-a)Z](1-U)[N]U??(1) (where 0.05?X?0.1, 0.15?Y?0.25, 0.7?Z?0.8, X+Y+Z=1, 0.45?a?0.6, and 0.08?U?0.2).

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

Abstract: A variable resistance memory device may include: a first electrode layer; a selection device layer on the first electrode layer, the selection device layer including a chalcogenide switching material consisting essentially of germanium (Ge), selenium (Se), and antimony (Sb), wherein a content of the Ge is less than a content of the Se based on an atomic weight; a second electrode layer on the selection device layer; a variable resistance layer on the second electrode layer, the variable resistance layer including a chalcogenide material; and a third electrode layer on the variable resistance layer.

Abstract: A memory device includes a variable resistance layer and a selection device layer electrically connected to the variable resistance layer. The memory device further included a chalcogenide switching material that reduces leakage current and has, for example, a composition according to chemical formula 1 below, [GeXSiY(AsaTe1-a)Z](1-U)[N]U??(1) (where 0.05?X?0.1, 0.15?Y?0.25, 0.7?Z?0.8, X+Y+Z=1, 0.45?a?0.6, and 0.08?U?0.2).

Abstract: A method for controlling operation of a hydraulic idle stop and go (ISG) system using an electro hydraulic power steering (EHPS) system includes measuring a pressure in an accumulator, a steering angle, and a steering angular velocity; determining whether the measured pressure in the accumulator is less than an absolute value of a first reference pressure; determining whether the measured steering angle is less than an absolute value of a reference angle when the measured pressure in the accumulator is less than the absolute value of the first reference pressure; determining whether the measured steering angular velocity is less than an absolute value of a reference angular velocity when the measured steering angle is less than the absolute value of the reference angle; and opening a solenoid valve when the measured steering angular velocity is less than the absolute value of the reference angular velocity.

Abstract: An electro-hydraulic power steering apparatus for an environment-friendly vehicle and a method of controlling the same is provided. In particular, a gear box assists in a steering force of a steering wheel, and a reservoir tank stores hydraulic oil therein. An electro-hydraulic power pump pumps the hydraulic oil via an electric motor to supply the hydraulic oil to the gear box. A first valve is mounted to a hydraulic line through which the hydraulic oil flows from the electro-hydraulic power pump to the gear box, and a second valve is mounted to a hydraulic line through which the hydraulic oil returns from the gear box to the reservoir tank.

Abstract: An electro-hydraulic power steering apparatus for an environment-friendly vehicle and a method of controlling the same is provided. In particular, a gear box assists in a steering force of a steering wheel, and a reservoir tank stores hydraulic oil therein. An electro-hydraulic power pump pumps the hydraulic oil via an electric motor to supply the hydraulic oil to the gear box. A first valve is mounted to a hydraulic line through which the hydraulic oil flows from the electro-hydraulic power pump to the gear box, and a second valve is mounted to a hydraulic line through which the hydraulic oil returns from the gear box to the reservoir tank.

Abstract: The present invention provides a use of a human antibody against a hepatitis B virus (HBV) surface antigen (HBsAg). The antibody exhibits an excellent HBV neutralizing ability, and thus, is useful for the prevention or treatment of the HBV infection or a disease caused thereby.