Abstract: Disclosed is an anodeless all-solid-state battery which may effectively control local volume expansion due to lithium deposited during charging of the battery. The all-solid-state battery includes an anode current collector, an intermediate layer located on the anode current collector, a solid electrolyte layer located on the intermediate layer, a cathode active material layer located on the solid electrolyte layer and including a cathode active material, and a cathode current collector located on the cathode active material layer. The intermediate layer includes carbon particles and metal particles alloyable with lithium, and the carbon particles include a first carbon material, e.g., as a spherical carbon material, and a second carbon material, e.g., a linear carbon material.

Abstract: A photopolymerizable resin composition includes a first layer and a second layer; and a barrier layer disposed between the first layer and the second layer, the barrier layer includes one or more of SiNx, SiOx, SiON, Mo, a Mo oxide, Cu, a Cu oxide, Al, an Al oxide, Ag, and a Ag oxide.

Abstract: A tiled display includes a plurality of display devices, where a display area and a non-display area surrounding the display area are defined in each of the plurality of display devices, and a pad area is defined in the non-display area. The plurality of display devices includes a first display device and a second display device disposed adjacent to the first display device in a first direction, and the pad area of the first display device overlaps the display area of the second display device in a thickness direction.

Abstract: A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.

Abstract: A display device includes: a substrate on which is disposed: an organic light emitting element which generates and emits light with which an image is displayed; a thin film transistor connected to the organic light emitting element and with which the organic light emitting element is controlled to emit the light; an interlayer insulating layer disposed between the thin film transistor and the organic light emitting element, the interlayer insulating layer including an organic material; and a capping layer disposed between the interlayer insulating layer and the organic light emitting element, the capping layer including an inorganic material. The interlayer insulating layer disposed between the thin film transistor and the organic light emitting element does not have photosensitivity and does not include sulfur.

Abstract: A photopolymerizable resin composition includes a first layer and a second layer; and a barrier layer disposed between the first layer and the second layer, the barrier layer includes one or more of SiNx, SiOx, SiON, Mo, a Mo oxide, Cu, a Cu oxide, Al, an Al oxide, Ag, and a Ag oxide.

Abstract: Provided is an earthquake response system using a seismic motion sensor. The seismic motion sensor of the earthquake response system includes: a sensor unit measuring a sensor value including peak ground acceleration (PGA) of the ground due to shaking; a seismic motion sensing unit sensing seismic motion on the basis of a seismic motion sensing result value calculated from an artificial neural network that uses the peak ground acceleration as input when the peak ground acceleration satisfies a seismic motion sensing condition; a seismic motion determiner determining generation of final seismic motion on the basis of a seismic motion determination parameter calculated from the sensor value on the basis of the seismic motion sensing result; a shaking grade calculator calculating a shaking grade of the determined final seismic motion through the peak ground acceleration; and a communication unit notifying the shaking grade of the final seismic motion.

Abstract: Provided is an earthquake response system using a seismic motion sensor. The seismic motion sensor of the earthquake response system includes: a sensor unit measuring a sensor value including peak ground acceleration (PGA) of the ground due to shaking; a seismic motion sensing unit sensing seismic motion on the basis of a seismic motion sensing result value calculated from an artificial neural network that uses the peak ground acceleration as input when the peak ground acceleration satisfies a seismic motion sensing condition; a seismic motion determiner determining generation of final seismic motion on the basis of a seismic motion determination parameter calculated from the sensor value on the basis of the seismic motion sensing result; a shaking grade calculator calculating a shaking grade of the determined final seismic motion through the peak ground acceleration; and a communication unit notifying the shaking grade of the final seismic motion.

Abstract: A manufacturing method of a display device according to some embodiments includes: forming a protrusion pattern on a carrier glass; coating a polymer on the protrusion pattern to form a polymer layer; forming a stacked structure on the polymer layer, including a transistor and an organic light emitting element connected to the transistor; and separating the carrier glass and the protrusion pattern from the polymer layer, wherein an opening penetrating the polymer layer is formed during the separation of the protrusion pattern.

Abstract: A display device includes: a substrate on which is disposed: an organic light emitting element which generates and emits light with which an image is displayed; a thin film transistor connected to the organic light emitting element and with which the organic light emitting element is controlled to emit the light; an interlayer insulating layer disposed between the thin film transistor and the organic light emitting element, the interlayer insulating layer including an organic material; and a capping layer disposed between the interlayer insulating layer and the organic light emitting element, the capping layer including an inorganic material. The interlayer insulating layer disposed between the thin film transistor and the organic light emitting element does not have photosensitivity and does not include sulfur.

Abstract: A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.

Abstract: A manufacturing method of a display device according to some embodiments includes: forming a protrusion pattern on a carrier glass; coating a polymer on the protrusion pattern to form a polymer layer; forming a stacked structure on the polymer layer, including a transistor and an organic light emitting element connected to the transistor; and separating the carrier glass and the protrusion pattern from the polymer layer, wherein an opening penetrating the polymer layer is formed during the separation of the protrusion pattern.